Abstract: The curable resin composition of the present invention contains inorganic particles and a curable resin. The inorganic particles includes an inorganic particle (a-1) having a Mohs hardness of 7 or more and an average particle diameter of 1 ?m or less, an inorganic particle (a-2) having a Mohs hardness of 4 or more to less than 7 and an average particle diameter of 1 ?m or less, and an inorganic particle (a-3) having a Mohs hardness of less than 4 and an average particle diameter of 1 ?m or less. The curable resin is at least one selected from a group consisting of a thermosetting resin and an active energy ray-curable resin.

Abstract: A display device (100) includes: a display panel (110) having a display area where an image is displayed; a light guide member (150) that has an inner side face (150a) set at an 80 to 110° angle ? to the surface of the display panel (110) and that guides light from the periphery of the display panel (110) to outside of the display area; and a mirror (160) that covers the inner side face (150a) of the light guide member (150).

Abstract: A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: Provided is a multi-layered weather-resistant multilayer film that exhibits good substrate adhesion, wherein curing problems are avoided, bleed-out is minimized, yellowing is reduced, and weather-resistance is improved. The weather-resistant multilayer film 10 is provided with the following: a transparent film-like substrate C; a UV-absorbing resin layer B laminated on the substrate C and containing a UV absorber; and a first cured resin layer A laminated on the UV-absorbing resin layer B. The first cured resin layer A has a thickness of 1.0 to 10 ?m. The UV-absorbing resin layer B has a thickness of 0.5 to 5 ?m. The UV-absorbing resin layer B has an absorption wavelength of 200 to 500 nm.

Abstract: Provided is a transfer film for in-mold molding which is superior in solvent resistance, heat resistance, durability, blocking resistance, and moldability, and is capable of suppressing the generation of gate flow, and also provided is a method for producing such a film. The film is provided with: a transfer layer (11) which is to be transferred to an in-mold molded body and which is to be cured when irradiated with active energy rays after the transfer; and a film shaped substrate (L0). The transfer layer (11) comprises an IMD layer (L2) laminated on the substrate (L0) and to be arranged on the outermost surface of the molded body after the in-mold molding. The TMD layer (L2) is constituted by a mixture composition containing at least one active-energy curable resin and at least one thermosetting resin.

Abstract: A method for manufacturing a display apparatus includes a first step of arranging a display panel (110) inside a housing (130); a second step including a light guide lens formation step of forming a curved surface (151b) of a light guide lens (151) into a concave-convex surface having surface roughness of 40-250 ?m, and a cover layer formation step of forming a light guide member (150) in such a manner that the curved surface (151b) of the light guide lens (151) is covered by a cover layer (152) to form an image-display-side surface of the cover layer (152) into a non-concave-convex surface; and a third step of bonding the light guide member (150) to a surface of an outer peripheral edge part of the display panel (110) and a surface of the window frame (130).

Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

Abstract: A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: A polishing apparatus includes a substrate holder configured to hold and rotate a substrate, a press pad configured to press a polishing tape having a polishing surface against a bevel portion of the substrate held by the substrate holder, and a feeding mechanism configured to cause the polishing tape to travel in its longitudinal direction. The press pad includes a hard member having a pressing surface for pressing the bevel portion of the substrate through the polishing tape, and at least one elastic member for pressing the hard member against the bevel portion of the substrate through the belt-shaped polishing tool.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: A polymer and a treating agent (such as a surface-treating agent) are provided that have excellent characteristics in such properties as water repellency, oil repellency, antifouling property and charge controlling property. The polymer contains a structural unit derived from fluorosilsesquioxane having an addition polymerizable group, or contains a structural unit derived from fluorosilsesquioxane having an addition polymerizable group and a structural unit derived from organopolysiloxane having an addition polymerizable group. The treating agent contains the polymer. An article treated with the treating agent is also provided.

Abstract: A polishing apparatus polishes a periphery (a bevel portion, a notch portion, an edge-cut portion) of a substrate by bringing a polishing tool into sliding contact with the periphery of the substrate. The polishing apparatus includes a substrate holder configured to hold the substrate, and a polishing head configured to polish the periphery of the substrate held by the substrate holder using the polishing tool. The polishing head includes a press pad for pressing the polishing tool against the periphery of the substrate, and a linear motor configured to reciprocate the press pad.

Abstract: The present invention provides a polishing apparatus and a polishing method capable of calculating outside diameters of rolls of a polishing tape on a polishing-tape supply reel and a polishing-tape recovery reel and capable of calculating a remaining amount of the polishing tape and a consumption of the polishing tape from the outside diameters of the rolls. This polishing apparatus includes a polishing-tape supply reel (46), a polishing head (44), a polishing-tape drawing-out mechanism G1, and a polishing-tape supply and recovery mechanism (45) configured to recover the polishing tape (43) from the polishing-tape supply reel (46) via the polishing head (44).

Abstract: According to one embodiment, a control method for a magnetic disk device includes writing data by varying a phase of the array period of the plurality of magnetic elements or a phase of the time period of the recording signal in one section of the track from a corresponding phase in another section of the track, reading a reproduction signal from the track, and determining a phase shift between the array period of the plurality of magnetic elements and the time period of the recording signal, based on a reproduction signal read from the one section and a reproduction signal read from the other section. In another embodiment, a magnetic disk includes a track in which magnetic elements are magnetically separated and arranged in an array period, and a phase of the array period in one section is different from a phase in another section of the track.

Abstract: A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.

Abstract: A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part.

Abstract: A polishing apparatus polishes a top edge portion and/or a bottom edge portion of a substrate accurately and uniformly. The polishing apparatus includes a rotary holding mechanism 3 configured to hold the substrate W horizontally and to rotate the substrate W; and at least one polishing head 30 disposed near the peripheral portion of the substrate. The polishing head 30 has at least one protrusion 51a, 51b extending along a circumferential direction of the substrate W, and the polishing head 30 is configured to press a polishing surface of a polishing tape 23 by the protrusion 51a, 51b against the peripheral portion of the substrate W from above or below.

Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.