Patents by Inventor Kenzo Hanawa

Kenzo Hanawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8148712
    Abstract: An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/?m2.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: April 3, 2012
    Assignee: Showa Denko K.K.
    Inventors: Hisayuki Miki, Hiromitsu Sakai, Kenzo Hanawa, Yasunori Yokoyama, Yasumasa Sasaki, Hiroaki Kaji
  • Publication number: 20120044667
    Abstract: A light emitting unit (60) is provided with a resin container (61) in which a recessed portion (61a) is formed, an anode lead portion (62) and a cathode lead portion (63) which are provided so as to be exposed on the bottom surface of the recessed portion (61a), a semiconductor light emitting element (64) attached to the cathode lead portion (63) on the bottom surface (70) of the recessed portion (61a), and a sealing resin (65) provided so as to cover the recessed portion (61a). The resin container (61) is produced from a white resin containing titania as a coloring agent. The anode lead portion (62) and the cathode lead portion (63) are each configured by forming a silver-plated layer with the gloss level set in the range of 0.3-1.0 inclusive on a metal plate based on a copper alloy or the like. Thus, the efficiency of extraction of light outputted from the light emitting unit is improved.
    Type: Application
    Filed: September 1, 2009
    Publication date: February 23, 2012
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo Hanawa, Takaharu Hoshina, Tomoyuki Takei
  • Patent number: 8097482
    Abstract: A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.
    Type: Grant
    Filed: June 3, 2008
    Date of Patent: January 17, 2012
    Assignee: Showa Denko K.K
    Inventors: Kenzo Hanawa, Yasumasa Sasaki, Hisayuki Miki
  • Patent number: 8012784
    Abstract: Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp. Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0?X<1) by activating, with plasma, and thereby reacting at least a metallic Ga source and a gas containing a group V element, and the underlying layer 14 is formed on the buffer layer 12.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: September 6, 2011
    Assignee: Showa Denko K.K.
    Inventors: Hisayuki Miki, Yasunori Yokoyama, Takehiko Okabe, Kenzo Hanawa
  • Publication number: 20110198212
    Abstract: A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
    Type: Application
    Filed: January 10, 2011
    Publication date: August 18, 2011
    Applicant: SHOWA DENKO K.K.
    Inventors: Hisayuki MIKI, Kenzo Hanawa, Yasunori Yokoyama, Yasumasa Sasaki
  • Publication number: 20110147763
    Abstract: According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
    Type: Application
    Filed: July 30, 2009
    Publication date: June 23, 2011
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo Hanawa, Yasumasa Sasaki
  • Patent number: 7935980
    Abstract: A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device 1 in which an n-type semiconductor layer (13), a light-emitting layer (14), and a p-type semiconductor layer (15) are formed on a substrate (11), a transparent positive electrode (16) is formed on the p-type semiconductor layer (15), a positive electrode bonding pad (17) is formed on the transparent positive electrode (16), and a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13).
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: May 3, 2011
    Assignee: Showa Denko K.K.
    Inventors: Kenzo Hanawa, Yasunori Yokoyama
  • Publication number: 20110095331
    Abstract: Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.
    Type: Application
    Filed: June 11, 2009
    Publication date: April 28, 2011
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo Hanawa, Hiromitsu Sakai, Yasumasa Sasaki
  • Publication number: 20110084307
    Abstract: One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0?x<1) is formed on the pretreated substrate (11) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer (14a)
    Type: Application
    Filed: June 3, 2009
    Publication date: April 14, 2011
    Applicant: SHOWA DENKO K.K.
    Inventors: Hisayuki Miki, Yasunori Yokoyama, Takehiko Okabe, Kenzo Hanawa
  • Publication number: 20100261308
    Abstract: The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 14, 2010
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshiaki IKENOUE, Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki, Hitoshi Yokouchi, Ryoko Konta, Hiroaki Kaji
  • Publication number: 20100244086
    Abstract: A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.
    Type: Application
    Filed: June 3, 2008
    Publication date: September 30, 2010
    Applicant: Showa Denko K.K.
    Inventors: Kenzo Hanawa, Yasumasa Sasaki, Hisayuki Miki
  • Patent number: 7737434
    Abstract: The invention provides light emitting diode illumination source having excellent properties as an illumination source such as a flat spectral distribution in the wavelength region from green to red and a sufficient emission intensity in the red region, comprising a light emitting diode having multiple peaks with a half-value width of 20 nm or more within a range from 480 to 700 nm in a spectral distribution, wherein the minimum of the intensities of the valleys between the peaks in the wavelength range from 480 to 700 nm is 65% or more of the maximum peak intensity in the same range, and an illuminator and a backlight for a liquid crystal display using the illumination source.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: June 15, 2010
    Assignee: Showa Denko K.K.
    Inventors: Kenji Shinozaki, Kenzo Hanawa, Tsuyoshi Kato, Yoshiaki Takahashi
  • Publication number: 20100051980
    Abstract: A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.
    Type: Application
    Filed: December 18, 2007
    Publication date: March 4, 2010
    Applicant: SHOWA DENKO K.K.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Publication number: 20100006430
    Abstract: A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.
    Type: Application
    Filed: October 19, 2007
    Publication date: January 14, 2010
    Applicant: Showa Denko K.K.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Publication number: 20090315046
    Abstract: The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.
    Type: Application
    Filed: August 15, 2007
    Publication date: December 24, 2009
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Publication number: 20090289270
    Abstract: According to the invention it is possible to obtain a flat AlN crystal film seed layer with a high degree of crystallinity, and particularly, a flat AlN crystal film seed layer that is homogeneous throughout can be used even with large substrates having diameters of 100 mm and greater, in order to obtain highly crystalline GaN-based thin-films for highly reliable, high-luminance LED elements and the like. The invention relates to a Group III nitride semiconductor multilayer structure obtained by layering an n-type semiconductor layer, composed of a Group III nitride semiconductor, a luminescent layer and a p-type semiconductor layer, on a sapphire substrate, the Group III nitride semiconductor multilayer structure having an AlN crystal film that is accumulated as the seed layer by sputtering on the sapphire substrate surface, and the AlN crystal film having a grain boundary spacing of 200 nm or greater.
    Type: Application
    Filed: May 19, 2009
    Publication date: November 26, 2009
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenzo HANAWA, Yasunori YOKOYAMA, Yasumasa SASAKI
  • Publication number: 20090283795
    Abstract: Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp. Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0?X<1) by activating, with plasma, and thereby reacting at least a metallic Ga source and a gas containing a group V element, and the underlying layer 14 is formed on the buffer layer 12.
    Type: Application
    Filed: May 12, 2009
    Publication date: November 19, 2009
    Applicant: SHOWA DENKO K.K.
    Inventors: Hisayuki MIKI, Yasunori Yokoyama, Takehiko Okabe, Kenzo Hanawa
  • Patent number: 7585690
    Abstract: A process for producing a group III nitride compound semiconductor light emitting device, the group III nitride compound semiconductor light emitting device and a lamp, having excellent producability and excellent light emitting characteristics are provided. Such a process for producing a group III nitride semiconductor light emitting device is a process for producing a group III nitride semiconductor light emitting device having a semiconductor layer 20 constituted by laminating an n-type semiconductor layer, a light-emitting layer 15 and a p-type semiconductor layer 16.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: September 8, 2009
    Assignee: Showa Denko K.K.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasumasa Sasaki
  • Publication number: 20090205707
    Abstract: The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.
    Type: Application
    Filed: February 18, 2009
    Publication date: August 20, 2009
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshiaki IKENOUE, Naoki Fukunaga, Hironao Shinohara, Hisayuki Miki, Kenzo Hanawa, Hiroaki Kaji, Hitoshi Yokouchi, Ryoko Konta
  • Publication number: 20090173962
    Abstract: A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device 1 in which an n-type semiconductor layer (13), a light-emitting layer (14), and a p-type semiconductor layer (15) are formed on a substrate (11), a transparent positive electrode (16) is formed on the p-type semiconductor layer (15), a positive electrode bonding pad (17) is formed on the transparent positive electrode (16), and a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13).
    Type: Application
    Filed: April 13, 2007
    Publication date: July 9, 2009
    Applicant: Showa Denko K.K.
    Inventors: Kenzo Hanawa, Yasunori Yokoyama