Patents by Inventor Keon-Soo Kim
Keon-Soo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10297451Abstract: A method of manufacturing a memory device includes: providing a substrate; forming in a cell region a channel extending in a direction perpendicular to an upper surface of the substrate and a plurality of gate electrode layers and a plurality of insulating layers stacked alternatingly on the substrate to be adjacent to the channel; forming a plurality of circuit elements on the substrate at a peripheral circuit region disposed at a periphery of the cell region; and forming an interlayer insulating layer on the substrate in the cell region and the peripheral circuit region, the interlayer insulating layer including a first, bottom interlayer insulating layer covering the plurality of circuit elements and at least a portion of the plurality of gate electrode layers, and a second, top interlayer insulating layer disposed on the first interlayer insulating layer.Type: GrantFiled: July 10, 2017Date of Patent: May 21, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Seok Jung, Joon Hee Lee, Keon Soo Kim, Sun Yeong Lee
-
Publication number: 20170309486Abstract: A method of manufacturing a memory device includes: providing a substrate; forming in a cell region a channel extending in a direction perpendicular to an upper surface of the substrate and a plurality of gate electrode layers and a plurality of insulating layers stacked alternatingly on the substrate to be adjacent to the channel; forming a plurality of circuit elements on the substrate at a peripheral circuit region disposed at a periphery of the cell region; and forming an interlayer insulating layer on the substrate in the cell region and the peripheral circuit region, the interlayer insulating layer including a first, bottom interlayer insulating layer covering the plurality of circuit elements and at least a portion of the plurality of gate electrode layers, and a second, top interlayer insulating layer disposed on the first interlayer insulating layer.Type: ApplicationFiled: July 10, 2017Publication date: October 26, 2017Inventors: Won Seok JUNG, Joon Hee LEE, Keon Soo KIM, Sun Yeong LEE
-
Patent number: 9735014Abstract: A method of manufacturing a memory device includes: providing a substrate; forming in a cell region a channel extending in a direction perpendicular to an upper surface of the substrate and a plurality of gate electrode layers and a plurality of insulating layers stacked alternatingly on the substrate to be adjacent to the channel; forming a plurality of circuit elements on the substrate at a peripheral circuit region disposed at a periphery of the cell region; and forming an interlayer insulating layer on the substrate in the cell region and the peripheral circuit region, the interlayer insulating layer including a first, bottom interlayer insulating layer covering the plurality of circuit elements and at least a portion of the plurality of gate electrode layers, and a second, top interlayer insulating layer disposed on the first interlayer insulating layer.Type: GrantFiled: March 9, 2015Date of Patent: August 15, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Seok Jung, Joon Hee Lee, Keon Soo Kim, Sun Yeong Lee
-
Publication number: 20150340374Abstract: A method of manufacturing a memory device includes: providing a substrate; forming in a cell region a channel extending in a direction perpendicular to an upper surface of the substrate and a plurality of gate electrode layers and a plurality of insulating layers stacked alternatingly on the substrate to be adjacent to the channel; forming a plurality of circuit elements on the substrate at a peripheral circuit region disposed at a periphery of the cell region; and forming an interlayer insulating layer on the substrate in the cell region and the peripheral circuit region, the interlayer insulating layer including a first, bottom interlayer insulating layer covering the plurality of circuit elements and at least a portion of the plurality of gate electrode layers, and a second, top interlayer insulating layer disposed on the first interlayer insulating layer.Type: ApplicationFiled: March 9, 2015Publication date: November 26, 2015Inventors: Won Seok JUNG, Joon Hee LEE, Keon Soo KIM, Sun Yeong LEE
-
Patent number: 9087711Abstract: A pattern structure for a semiconductor device includes a plurality of first patterns, each of the first patterns extending in a first direction in the shape of a line, neighboring first patterns being spaced apart from each other by a gap distance, the plurality of first patterns including a plurality of trenches in parallel with the line shapes, respective trenches being between neighboring first patterns, the plurality of trenches including long trenches and short trenches alternately arranged in a second direction substantially perpendicular to the first direction, and at least a second pattern, the second pattern being coplanar with the first pattern, end portions of the first patterns being connected to the second pattern.Type: GrantFiled: March 15, 2013Date of Patent: July 21, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yoon Moon Park, Jae Hwang Sim, Keon Soo Kim
-
Patent number: 8829644Abstract: In a non-volatile memory device and method of manufacturing the same, a device isolation pattern and an active region extend in a first direction on a substrate. A first dielectric pattern is formed on the active region of the substrate. Conductive stack structures are arranged on the first dielectric pattern and a recess is formed between a pair of the adjacent conductive stack structures. A protection layer is formed on a sidewall of the stack structure to protect the sidewall of the stack structure from over-etching along the first direction. The protection layer includes an etch-proof layer having oxide and arranged on a sidewall of the floating gate electrode and a sidewall of the control gate line and a spacer layer covering the sidewall of the conductive stack structures.Type: GrantFiled: November 5, 2013Date of Patent: September 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hwang Sim, Keon-Soo Kim, Kyung-Hoon Min, Min-Sung Song, Yeon-Wook Jung
-
Patent number: 8772852Abstract: Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region, and a source conductive line disposed on the common source in parallel to the common source. The source conductive line is electrically connected to the common source.Type: GrantFiled: December 4, 2008Date of Patent: July 8, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hong-Soo Kim, Keon-Soo Kim
-
Patent number: 8759224Abstract: In a method of forming a pattern structure, a cut-off portion of the node-separated line of a semiconductor device is formed by a double patterning process by using a connection portion of the sacrificial mask pattern and the mask pattern to thereby improve alignment margin. The alignment margin between the mask pattern and the sacrificial mask pattern is increased to an amount of the length of the connection portion of the sacrificial mask pattern. The lines adjacent to the node-separated line include a protrusion portion protruding toward the cut-off portion of the separated line.Type: GrantFiled: August 18, 2011Date of Patent: June 24, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Hyuk Kim, Keon-Soo Kim, Kwang-Shik Shin, Hyun-Chul Back, Seong-Soon Cho, Young-Bae Yoon, Jung-Hwan Park
-
Publication number: 20140138759Abstract: In an integrated circuit device and method of manufacturing the same, a resistor pattern is positioned on a device isolation layer of a substrate. The resistor pattern includes a resistor body positioned in a recess portion of the device isolation layer and a connector making contact with the resistor body and positioned on the device isolation layer around the recess portion. The connector has a metal silicide pattern having electric resistance lower than that of the resistor body at an upper portion. A gate pattern is positioned on the active region of the substrate and includes the metal silicide pattern at an upper portion. A resistor interconnection is provided to make contact with the connector of the resistor pattern. A contact resistance between the connector and the resistor interconnection is reduced.Type: ApplicationFiled: January 8, 2014Publication date: May 22, 2014Applicant: SAMSUNG Electronics Co., Ltd.Inventors: Young-Ho LEE, Keon-Soo KIM, Seong-Soon CHO, Jin- Hyun SHIN
-
Publication number: 20140061758Abstract: In a non-volatile memory device and method of manufacturing the same, a device isolation pattern and an active region extend in a first direction on a substrate. A first dielectric pattern is formed on the active region of the substrate. Conductive stack structures are arranged on the first dielectric pattern and a recess is formed between a pair of the adjacent conductive stack structures. A protection layer is formed on a sidewall of the stack structure to protect the sidewall of the stack structure from over-etching along the first direction. The protection layer includes an etch-proof layer having oxide and arranged on a sidewall of the floating gate electrode and a sidewall of the control gate line and a spacer layer covering the sidewall of the conductive stack structures.Type: ApplicationFiled: November 5, 2013Publication date: March 6, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Hwang SIM, Keon-Soo KIM, Kyung-Hoon MIN, Min-Sung SONG, Yeon-Wook JUNG
-
Patent number: 8642438Abstract: In an integrated circuit device and method of manufacturing the same, a resistor pattern is positioned on a device isolation layer of a substrate. The resistor pattern includes a resistor body positioned in a recess portion of the device isolation layer and a connector making contact with the resistor body and positioned on the device isolation layer around the recess portion. The connector has a metal silicide pattern having electric resistance lower than that of the resistor body at an upper portion. A gate pattern is positioned on the active region of the substrate and includes the metal silicide pattern at an upper portion. A resistor interconnection is provided to make contact with the connector of the resistor pattern. A contact resistance between the connector and the resistor interconnection is reduced.Type: GrantFiled: December 13, 2011Date of Patent: February 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Ho Lee, Keon-Soo Kim, Seong-Soon Cho, Jin-Hyun Shin
-
Patent number: 8592273Abstract: In a non-volatile memory device and method of manufacturing the same, a device isolation pattern and an active region extend in a first direction on a substrate. A first dielectric pattern is formed on the active region of the substrate. Conductive stack structures are arranged on the first dielectric pattern and a recess is formed between a pair of the adjacent conductive stack structures. A protection layer is formed on a sidewall of the stack structure to protect the sidewall of the stack structure from over-etching along the first direction. The protection layer includes an etch-proof layer having oxide and arranged on a sidewall of the floating gate electrode and a sidewall of the control gate line and a spacer layer covering the sidewall of the conductive stack structures.Type: GrantFiled: September 12, 2011Date of Patent: November 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hwang Sim, Keon-Soo Kim, Kyung-Hoon Min, Min-Sung Song, Yeon-Wook Jung
-
Patent number: 8519484Abstract: A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device includes a semiconductor substrate having a cell region including a cell trench and a peripheral region including a peripheral trench. The cell trench is filled with a core insulating material layer, and the peripheral trench is filled with a padding insulating material layer conformably formed on an inner surface thereof and a core insulating material layer formed on an inner surface of the padding insulating material layer. The core insulating material layer has a greater fluidity than the padding insulating material layer.Type: GrantFiled: February 8, 2012Date of Patent: August 27, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Won Kim, Jae-Hwang Sim, Keon-Soo Kim, Young-Ho Lee
-
Patent number: 8487383Abstract: A flash memory device, including a cell array region where a plurality of memory cells are connected in series to a single cell string, the cell array region including a pocket p-well configured to accommodate the plurality of memory cells and an n-well configured to surround the pocket p-well, a first peripheral region where low-voltage (LV) and high-voltage (HV) switches are connected to the memory cells through a word line, and a second peripheral region where bulk voltage switches are connected to bulk regions of the LV and HV switches.Type: GrantFiled: December 9, 2010Date of Patent: July 16, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yoon-Moon Park, Se-Jun Park, Suk-Kang Sung, Keon-Soo Kim, Jung-Dal Choi, Choong-Ho Lee, Jin-Hyun Shin, Seung-Wook Choi, Dong-Hoon Jang
-
Patent number: 8436412Abstract: A pattern structure for a semiconductor device includes a plurality of first patterns, each of the first patterns extending in a first direction in the shape of a line, neighboring first patterns being spaced apart from each other by a gap distance, the plurality of first patterns including a plurality of trenches in parallel with the line shapes, respective trenches being between neighboring first patterns, the plurality of trenches including long trenches and short trenches alternately arranged in a second direction substantially perpendicular to the first direction, and at least a second pattern, the second pattern being coplanar with the first pattern, end portions of the first patterns being connected to the second pattern.Type: GrantFiled: June 28, 2010Date of Patent: May 7, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yoon Moon Park, Jae Hwang Sim, Keon Soo Kim
-
Publication number: 20120178234Abstract: In an integrated circuit device and method of manufacturing the same, a resistor pattern is positioned on a device isolation layer of a substrate. The resistor pattern includes a resistor body positioned in a recess portion of the device isolation layer and a connector making contact with the resistor body and positioned on the device isolation layer around the recess portion. The connector has a metal silicide pattern having electric resistance lower than that of the resistor body at an upper portion. A gate pattern is positioned on the active region of the substrate and includes the metal silicide pattern at an upper portion. A resistor interconnection is provided to make contact with the connector of the resistor pattern. A contact resistance between the connector and the resistor interconnection is reduced.Type: ApplicationFiled: December 13, 2011Publication date: July 12, 2012Applicant: Samsung Electronics Co., Ltd.Inventors: Young-Ho LEE, Keon-Soo Kim, Seong-Soon Cho, Jin-Hyun Shin
-
Publication number: 20120132976Abstract: A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device includes a semiconductor substrate having a cell region including a cell trench and a peripheral region including a peripheral trench. The cell trench is filled with a core insulating material layer, and the peripheral trench is filled with a padding insulating material layer conformably formed on an inner surface thereof and a core insulating material layer formed on an inner surface of the padding insulating material layer. The core insulating material layer has a greater fluidity than the padding insulating material layer.Type: ApplicationFiled: February 8, 2012Publication date: May 31, 2012Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Won Kim, Jae-Hwang Sim, Keon-Soo Kim, Young-Ho Lee
-
Patent number: 8187935Abstract: A method of forming an active region structure includes preparing a semiconductor substrate having a cell array region and a peripheral circuit region, forming upper cell mask patterns having a line shape in the cell array region, forming first and second peripheral mask patterns in the peripheral circuit region, the first and second peripheral mask patterns being stacked in sequence and covering the peripheral circuit region, and upper surfaces of the upper cell mask patterns forming a step difference with an upper surface of the second peripheral mask pattern, forming spacers on sidewalls of the upper cell mask patterns to expose lower portions of the upper cell mask patterns and the second peripheral mask pattern, and removing the lower portions of the upper cell mask patterns using the spacers and the first and second peripheral mask patterns as an etch mask.Type: GrantFiled: June 7, 2010Date of Patent: May 29, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Ho Lee, Keon-Soo Kim, Jae-Hwang Sim, Jin-Hyun Shin, Kyung-Hoon Min
-
Patent number: 8183152Abstract: A method of fabricating a semiconductor device facilitates the forming of a conductive pattern of features having different widths. A conductive layer is formed on a substrate, and a mask layer is formed on the conductive layer. First spaced apart patterns are formed on the mask layer and a second pattern including first and second parallel portion is formed beside the first patterns on the mask layer. First auxiliary masks are formed over ends of the first patterns, respectively, and a second auxiliary mask is formed over the second pattern as spanning the first and second portions of the second pattern. The mask layer is then etched to form first mask patterns below the first patterns and a second mask pattern below the second pattern. The first and second patterns and the first and second auxiliary masks are removed. The conductive layer is then etched using the first and second mask patterns as an etch mask.Type: GrantFiled: October 14, 2010Date of Patent: May 22, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hwang Sim, Yoon-Moon Park, Keon-Soo Kim, Min-Sung Song, Young-Ho Lee
-
Publication number: 20120064710Abstract: In a non-volatile memory device and method of manufacturing the same, a device isolation pattern and an active region extend in a first direction on a substrate. A first dielectric pattern is formed on the active region of the substrate. Conductive stack structures are arranged on the first dielectric pattern and a recess is formed between a pair of the adjacent conductive stack structures. A protection layer is formed on a sidewall of the stack structure to protect the sidewall of the stack structure from over-etching along the first direction. The protection layer includes an etch-proof layer having oxide and arranged on a sidewall of the floating gate electrode and a sidewall of the control gate line and a spacer layer covering the sidewall of the conductive stack structures.Type: ApplicationFiled: September 12, 2011Publication date: March 15, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Hwang Sim, Keon-Soo Kim, Kyung-Hoon Min, Min-Sung Song, Yeon-Wook Jung