Abstract: An electronic device includes an electronic component including a chip and a protective layer disposed on the active surface of the chip; an encapsulation layer surrounding the electronic component; and a circuit structure contacting the first surface of the encapsulation layer and electrically connecting the electronic component. The protective layer has a second surface away from the active surface, and a first step difference between the first surface and the second surface is between 1 and 10 ?m.

Abstract: An electronic device includes a chip, a protection, a molding layer and a redistribution structure layer. The chip has an active surface and a first side surface connected to the active surface. The protection layer is disposed on the active surface of the chip and has a second side surface. The molding layer surrounds the chip and the protection layer. The redistribution structure layer is disposed on the molding layer, on the protection layer and electrically connected to the chip. The roughness of the first side surface is different from the roughness of the second side surface.

Abstract: A light-emitting device is provided, which includes a flexible substrate having a via, a top surface, and a bottom surface, a light-emitting unit having a first electrode and a second electrode, and disposed on the top surface, a thin film transistor electrically connected to the light-emitting unit, a circuit disposed on the bottom surface, a conductive layer disposed in the via, a barrier layer covering the conductive layer, another conductive layer electrically connected to and in contact with the conductive layer and disposed outside the via, and another barrier layer in contact with a top surface of the another conductive layer. The conductive layer and the another conductive layer are disposed on opposite sides of the flexible substrate. The circuit is electrically connected to the first electrode through the via and electrically connected to the first electrode through the thin film transistor.

Abstract: An electronic device including a plurality of light-emitting units, a driving circuit, and a controlling circuit is provided. The driving circuit is configured to drive at least one of the light-emitting units. The controlling circuit is configured to control the driving circuit. The plurality of light-emitting units, the driving circuit, and the controlling circuit are respectively disposed on different substrate.

Abstract: A tiled electronic device includes a plurality of display panels, and at least one of the display panels includes a flexible substrate, a pixel, and two signal wires. The flexible substrate has a display portion and a bent portion connected to the display portion. The pixel is disposed on the display portion. The signal wires are disposed on the flexible substrate, and electrically connected to the pixel. Each of the signal wires has a first segment disposed on the display portion, and a second segment disposed on the bent portion. The two first sections have a first pitch, and the two second sections have a second pitch. The first pitch is different than the second pitch.

Abstract: A light-emitting device is provided. The light-emitting device includes a circuit substrate, an array substrate, a plurality of light-emitting units and a driver. The circuit substrate has a top surface. A top circuit is disposed on the top surface. The array substrate is disposed on the top surface of the circuit substrate and electrically connected to the top circuit. The light-emitting units are disposed on the array substrate. The light-emitting device further includes an electrical connection structure, a plurality of light extraction layers, a protective layer, a plurality of test pads, and a light absorption layer. The plurality of test pads are disposed on the array substrate, and the light absorption layer covers at least one of the test pads.

Abstract: A manufacturing method of a package structure including the following steps is provided. A carrier is provided. An anti-warpage structure is formed on the carrier. And a redistribution layer is formed on the carrier. In the normal direction of the carrier, a warpage trend of the anti-warpage structure is opposite to a warpage trend of the redistribution layer.

Abstract: An electronic device includes an electronic unit, an encapsulation layer surrounding the electronic unit, a circuit structure electrically connected to the electronic unit and a bonding component. The circuit structure includes a first metal layer electrically connected to the electronic unit, a first dielectric layer disposed on the first metal layer and having an opening and a second metal layer disposed in the opening. The bonding component overlaps the second metal layer, and at least partially disposed in the opening. In cross-sectional view, a first height between a first dielectric layer top surface and a first metal layer top surface is greater than a second height between a second metal layer top surface and the first metal layer top surface. A difference between the first height and the second height is greater than or equal to 1 ?m and less than or equal to 15 ?m.

Abstract: An electronic device includes: a circuit substrate; a first substrate overlapped with the circuit substrate; a first electronic unit attached on the first substrate; a second substrate disposed between the first substrate and the circuit substrate; a first transistor attached on the second substrate and electrically connected to the first electronic unit; and a first conductive element penetrating the second substrate, wherein the first transistor is electrically connected to the circuit substrate through the first conductive element.

Abstract: An electronic device is provided. The electronic device includes a chip, a redistribution structure, a contact pad, a buffer layer, and a first connection pad. The redistribution structure is electrically connected to the chip. The redistribution structure includes a metal pad, and the metal pad is disposed opposite to the chip. The contact pad is disposed on the metal pad. The buffer layer is disposed on the redistribution structure and includes an opening. The opening exposes at least a portion of the contact pad. The first connection pad is disposed on the contact pad and extends in the opening. Moreover, in a normal direction of the chip, the metal pad, the contact pad and the first connection pad overlap. A method of manufacturing an electronic device is also provided.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, a PN junction assembly, and a transistor circuit. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer is formed above the second surface. The second metal layer is formed on the second surface. The PN junction assembly is disposed on the first surface and electrically connected with the first metal layer and the second metal layer. The PN junction assembly includes a variable capacitor. The transistor circuit is electrically connecting with the second metal layer.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes an insulator, a driving unit, an electronic unit, and a circuit unit. The driving unit is overlapped with the insulator. The electronic unit is overlapped with the insulator. The circuit unit is electrically connected to the driving unit. The driving unit receives a signal from the circuit unit and drives the electronic unit.

Abstract: A light-emitting device is provided. The light-emitting device includes a circuit substrate, an array substrate, a plurality of light-emitting units and a driver. The circuit substrate has a top surface. A top circuit is disposed on the top surface. The array substrate is disposed on the top surface of the circuit substrate and electrically connected to the top circuit. The light-emitting units are disposed on the array substrate. The light-emitting device further includes an electrical connection structure, a plurality of light extraction layers, a protective layer, a plurality of test pads, and a light absorption layer. The plurality of test pads are disposed on the array substrate, and the light absorption layer covers at least one of the test pads.

Abstract: An electronic device includes: a circuit board; a plurality of diodes disposed on a first surface of the circuit board; a plurality of first driving circuits disposed on the first surface of the circuit board and electrically connected to the plurality of diodes; and a plurality of second driving circuits electrically connected to the plurality of first driving circuits, wherein a part of the plurality of second driving circuits are disposed on a first substrate, and another part of the second driving circuits are disposed on a second substrate.

Abstract: An electronic device and a manufacturing method of the electronic device are provided by the present disclosure, wherein the electronic device includes at least one chip unit, a circuit structure electrically connected to the at least one chip unit, and a heat dissipation layer disposed at a side of the at least one chip unit opposite to the circuit structure, wherein the heat dissipation layer includes an insulating material layer and a plurality of silicon carbide particles, the insulating material layer clads the silicon carbide particles, and the silicon carbide particles have monocrystal structures.

Abstract: An electronic device is provided by the present disclosure, wherein the electronic device includes at least one chip unit, a circuit structure electrically connected to the at least one chip unit, and a heat dissipation layer disposed at a side of the at least one chip unit opposite to the circuit structure, wherein the heat dissipation layer includes an insulating material layer and a plurality of silicon carbide particles, the insulating material layer clads the silicon carbide particles, and the silicon carbide particles have rounded-corner structures.

Abstract: An electrical connection structure is provided. The electrical connection structure includes a plurality of conductive particles and a connection pad including a first part, a second part and a third part. The first part is formed on an array substrate and electrically connected to a circuit of the array substrate. The second part is connected to the first part and passes through the array substrate. The third part is connected to the second part and electrically connected to a circuit of a circuit substrate through the conductive particles.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.