Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract: A touch display device and a manufacturing method thereof are provided. The touch display device includes a display module and a touch module disposed on the display module. The touch module includes a patterned metal layer and an antireflection layer. The patterned metal layer includes a plurality of metal lines. The pattern metal layer has a first region. At least one of the metal lines in the first region has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall. The antireflection layer is formed on the first region, wherein the antireflection layer covers the top surface and the first sidewall, and the second sidewall of at least one of the metal lines in the first region.

Abstract: A method for manufacturing display panel is disclosed, which comprises: (A) providing a substrate, an oxide semiconductor layer disposed on the substrate, and a gate electrode disposed on the substrate and corresponding to the oxide semiconductor layer; (B) forming a metal layer on the oxide semiconductor layer; (C) forming a photoresist on the metal layer, and etching the metal layer to form a source electrode and a drain electrode; (D) heating the photoresist and the photoresist covers at least partial of side walls of the source electrode and the drain electrode; (E) applying an alkaline solution on the substrate; and (F) removing the photoresist to expose the source electrode and the drain electrode.

Abstract: A display manufacturing method comprises steps of: moving a first substrate and a second substrate by a conveying apparatus; and implementing a first exposure and a second exposure of the first substrate and a first exposure and a second exposure of the second substrate by at least one light emitting element when the conveying apparatus drives the first and second substrates to pass through the light source module. When the first exposures of the first and second substrates are implemented, the moving directions of the first and second substrates are opposite, or when the second exposures of the first and second substrates are implemented, the moving directions of the first and second substrates are opposite. A photo alignment process is also disclosed.

Abstract: A liquid crystal display device includes: a first substrate; a second substrate spaced apart from the first substrate; and a plurality of liquid crystal molecules disposed between the first and second substrates. The first substrate includes a transparent substrate, an insulator layer formed on a surface of the transparent substrate and formed with a plurality of grooves, and a pixel electrode formed on a surface of the insulator layer and formed with a plurality of electrode slits.

Abstract: A liquid crystal display device includes: a first substrate; a second substrate spaced apart from the first substrate; and a plurality of liquid crystal molecules disposed between the first and second substrates. The first substrate includes a transparent substrate, an insulator layer formed on a surface of the transparent substrate and formed with a plurality of grooves, and a pixel electrode formed on a surface of the insulator layer and formed with a plurality of electrode slits.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract: A method for packaging display panel is provided. The method comprises following steps: providing a first substrate; pasting a frit on the first substrate; pre-sintering the frit in a specific temperature; forming a color filter unit on the first substrate; providing a second substrate oppositely disposed on the first substrate; and assembling the first substrate and the second substrate with the frit by way of laser sealing.

Abstract: A photo-alignment apparatus is provided, which includes an exposure machine, at least one mask and a photo-alignment area. The exposure machine includes a light source, a polarization plate, and a multilayer splitter. The light source emits an unpolarized light. The polarization plate receives the unpolarized light and converts the unpolarized light into a polarized light. The multilayer splitter split the polarized light into a first light beam and a second light beam. The mask includes at least two transmission portions which allow the first and second light beams to be transmitted therethrough and be projected onto the photo-alignment area for exposure thereto.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract: A light exposure system executes a light exposure process to an assembly cell, which includes a first substrate, a second substrate and a liquid crystal layer disposed between the first and second substrates. The light exposure system comprises a transmission device, two moving stages and a light source module. The moving stages are disposed on the transmission device and at least one of the moving stages carries the assembly cell. The light source module includes at least a light emitting element. The transmission device moves at least one of the moving stages carrying the assembly cell or the light source module and the light emitting element emits the light to the assembly cell. A light exposure process applied to the light exposure system is also disclosed.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract: A display manufacturing method comprises steps of: moving a first substrate and a second substrate by a conveying apparatus; and implementing a first exposure and a second exposure of the first substrate and a first exposure and a second exposure of the second substrate by at least one light emitting element when the conveying apparatus drives the first and second substrates to pass through the light source module. When the first exposures of the first and second substrates are implemented, the moving directions of the first and second substrates are opposite, or when the second exposures of the first and second substrates are implemented, the moving directions of the first and second substrates are opposite. A photo alignment process is also disclosed.

Abstract: A liquid crystal display device includes: a first substrate; a second substrate spaced apart from the first substrate; and a plurality of liquid crystal molecules disposed between the first and second substrates. The first substrate includes a transparent substrate, an insulator layer formed on a surface of the transparent substrate and formed with a plurality of grooves, and a pixel electrode formed on a surface of the insulator layer and formed with a plurality of electrode slits.

Abstract: A photo-alignment apparatus is provided, which includes an exposure machine, at least one mask and a photo-alignment area. The exposure machine includes a light source, a polarization plate, and a multilayer splitter. The light source emits an unpolarized light. The polarization plate receives the unpolarized light and converts the unpolarized light into a polarized light. The multilayer splitter split the polarized light into a first light beam and a second light beam. The mask includes at least two transmission portions which allow the first and second light beams to be transmitted therethrough and be projected onto the photo-alignment area for exposure thereto.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.