Patents by Inventor Keren Jacobs
Keren Jacobs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170040214Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.Type: ApplicationFiled: August 19, 2015Publication date: February 9, 2017Inventors: Chiukin Steven Lai, Keren Jacobs Kanarik, Samantha Tan, Anand Chandrashekar, Teh-tien Su, Wenbing Yang, Michael Wood, Michal Danek
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Publication number: 20160358782Abstract: Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve exposing the III-V material to a chlorine-containing plasma without biasing the substrate to form a modified III-V surface layer; and applying a bias voltage to the substrate while exposing the modified III-V surface layer to a plasma to thereby remove the modified III-V surface layer. The disclosed methods are suitable for a wide range of applications, including etching processes for trenches and holes, fabrication of HEMTs, fabrication of LEDs, and improved selectivity in etching processes.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Inventors: Wenbing Yang, Tomihito Ohba, Samantha Tan, Keren Jacobs Kanarik, Jeffrey Marks, Kazuo Nojiri
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Publication number: 20160322201Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.Type: ApplicationFiled: July 13, 2016Publication date: November 3, 2016Inventor: Keren Jacobs Kanarik
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Patent number: 9425025Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.Type: GrantFiled: October 9, 2014Date of Patent: August 23, 2016Assignee: Lam Research CorporationInventor: Keren Jacobs Kanarik
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Publication number: 20160203995Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to protect feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.Type: ApplicationFiled: April 24, 2015Publication date: July 14, 2016Inventors: Keren Jacobs Kanarik, Jeffrey Marks, Harmeet Singh, Samantha Tan, Alexander Kabansky, Wenbing Yang, Taeseung Kim, Dennis M. Hausmann, Thorsten Lill
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Publication number: 20160099133Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.Type: ApplicationFiled: December 10, 2015Publication date: April 7, 2016Inventor: Keren Jacobs KANARIK
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Patent number: 9214320Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.Type: GrantFiled: July 9, 2014Date of Patent: December 15, 2015Assignee: Lam Research CorporationInventor: Keren Jacobs Kanarik
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Publication number: 20150020971Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.Type: ApplicationFiled: October 9, 2014Publication date: January 22, 2015Inventor: Keren Jacobs Kanarik
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Patent number: 8883028Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.Type: GrantFiled: July 16, 2012Date of Patent: November 11, 2014Assignee: Lam Research CorporationInventor: Keren Jacobs Kanarik
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Publication number: 20140319098Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.Type: ApplicationFiled: July 9, 2014Publication date: October 30, 2014Inventor: Keren Jacobs Kanarik
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Patent number: 8808561Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.Type: GrantFiled: July 16, 2012Date of Patent: August 19, 2014Assignee: Lam Research CoporationInventor: Keren Jacobs Kanarik
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Patent number: 8492174Abstract: A method for providing a process indicator for an etching chamber is provided. A wafer with a blanket etch layer is provided into the etching chamber. A blanket etch is performed on the blanket etch layer. A blanket deposition layer is deposited over the blanket etch layer after performing the blanket etch has been completed. A thickness of the blanket etch layer and a thickness of the blanket deposition layer is measured. The measured thicknesses are used to determine a process indicator.Type: GrantFiled: May 25, 2012Date of Patent: July 23, 2013Assignee: Lam Research CorporationInventors: Keren Jacobs Kanarik, Jorge Luque, Nicholas Webb
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Publication number: 20130168354Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.Type: ApplicationFiled: July 16, 2012Publication date: July 4, 2013Inventor: Keren Jacobs Kanarik
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Publication number: 20130119018Abstract: A method for processing substrate in a processing chamber that has at least one plasma generating source and a gas source for providing a process gas into the chamber is provided. The method includes exciting the plasma generating source with an RF signal having an RF frequency. The method also includes pulsing the RF signal using at least one of amplitude, phase, and frequency of the RF signal having a first value during first portion of an RF pulsing period and a second value during second portion of RF pulsing period, which is associated with first source pulsing frequency. The method further includes pulsing the gas source such that the process gas flows into the chamber at a first rate during a first portion of a gas pulsing period and a second rate during a second portion of the gas pulsing period, which is associated with the gas pulsing frequency.Type: ApplicationFiled: July 16, 2012Publication date: May 16, 2013Inventors: Keren Jacobs Kanarik, Joydeep Guha
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Publication number: 20130119019Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.Type: ApplicationFiled: July 16, 2012Publication date: May 16, 2013Inventor: Keren Jacobs Kanarik
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Publication number: 20120231556Abstract: A method for providing a process indicator for an etching chamber is provided. A wafer with a blanket etch layer is provided into the etching chamber. A blanket etch is performed on the blanket etch layer. A blanket deposition layer is deposited over the blanket etch layer after performing the blanket etch has been completed. A thickness of the blanket etch layer and a thickness of the blanket deposition layer is measured. The measured thicknesses are used to determine a process indicator.Type: ApplicationFiled: May 25, 2012Publication date: September 13, 2012Applicant: Lam Research CorporationInventors: Keren Jacobs Kanarik, Jorge Luque, Nicholas Webb
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Patent number: 8206996Abstract: A method for providing a process indicator for an etching chamber is provided. A wafer with a blanket etch layer is provided into the etching chamber. A blanket etch is performed on the blanket etch layer. A blanket deposition layer is deposited over the blanket etch layer after performing the blanket etch has been completed. A thickness of the blanket etch layer and a thickness of the blanket deposition layer is measured. The measured thicknesses are used to determine a process indicator.Type: GrantFiled: December 15, 2009Date of Patent: June 26, 2012Assignee: Lam Research CorporationInventors: Keren Jacobs Kanarik, Jorge Luque, Nicholas Webb
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Publication number: 20100093115Abstract: A method for providing a process indicator for an etching chamber is provided. A wafer with a blanket etch layer is provided into the etching chamber. A blanket etch is performed on the blanket etch layer. A blanket deposition layer is deposited over the blanket etch layer after performing the blanket etch has been completed. A thickness of the blanket etch layer and a thickness of the blanket deposition layer is measured. The measured thicknesses are used to determine a process indicator.Type: ApplicationFiled: December 15, 2009Publication date: April 15, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Keren Jacobs Kanarik, Jorge Luque, Nicholas Webb
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Patent number: 7682480Abstract: A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.Type: GrantFiled: January 25, 2006Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: Keren Jacobs Kanarik, Aaron Eppler
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Patent number: 7135410Abstract: A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, where the etch plasma begins to etch. A feature is etched in the etch layer with the etch plasma. At least one etch plasma parameter is ramped during the etching of the feature to optimize plasma parameters with the changing etch depth and the feature is etched with the ramped plasma until the feature is etched to a feature depth.Type: GrantFiled: September 26, 2003Date of Patent: November 14, 2006Assignee: Lam Research CorporationInventors: Keren Jacobs, Aaron Eppler