Abstract: Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

Abstract: A backside illumination (BSI) image sensor having a light receiving part at the wafer or die backside, and a manufacturing method thereof, are disclosed. The method includes polishing the light receiving part so that a super via protrudes, forming a first insulating layer to cover the protruding super via and the light receiving part, forming a photoresist pattern on the first insulating layer to expose a pad region, etching the first insulating layer to form spacers at sides of the protruding super via, repeatedly forming a second insulating layer covering the spacers, the super via and the light receiving part and etching the second insulating layer so that the spacers increase in width and cover an upper surface of the light receiving part, and forming a metal pad in the pad region to contact the super via.

Abstract: An image sensor includes an insulating interlayer including a metal line on a semiconductor substrate, a photodiode pattern provided on the insulating interlayer to be connected to the metal line, the photodiode pattern separated per unit pixel by a gap area, a device isolation insulating layer provided on the insulating interlayer including the photodiode pattern and the gap area, a contact hole provided to the device isolation insulating layer to expose the photodiode pattern and a neighbor photodiode pattern, and a contact plug provided to the contact hole to be connected to a plurality of the photodiode patterns.

Abstract: A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased.

Abstract: Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level (i.e. low luminance or high luminance). The CMOS image sensor includes first and second photodiode regions for generating electrons in response to incident light, and a transfer transistor positioned between the first and second photodiodes for receiving the generated electrons transferred from the first and/or second photodiode.

Abstract: A backside illumination (BSI) image sensor having a light receiving part at the wafer or die backside, and a manufacturing method thereof, are disclosed. The method includes polishing the light receiving part so that a super via protrudes, forming a first insulating layer to cover the protruding super via and the light receiving part, forming a photoresist pattern on the first insulating layer to expose a pad region, etching the first insulating layer to form spacers at sides of the protruding super via, repeatedly forming a second insulating layer covering the spacers, the super via and the light receiving part and etching the second insulating layer so that the spacers increase in width and cover an upper surface of the light receiving part, and forming a metal pad in the pad region to contact the super via.

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same. The CMOS image sensor includes a photodiode area and a floating diffusion area formed on a semiconductor substrate, a transistor formed on the semiconductor substrate between the photodiode area and the floating diffusion area, an isolation layer formed below the transistor, and a channel area formed between the transistor and the isolation layer.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor is provided. The CMOS image sensor can include a photodiode, a transfer transistor (Tx), a reset transistor (Rx), a drive transistor (Dx), and a select transistor (Sx). The CMOS image sensor includes a floating diffusion region between the transfer transistor (Tx) and the reset transistor (Rx). The gate of the drive transistor (Dx) is formed of polysilicon and extends to and is formed on the floating diffusion region.

Abstract: A CMOS image sensor and method of manufacture reduces the problem of electron loss in a floating diffusion area. A method of fabricating a CMOS image sensor includes forming a gate electrode over a first conductive type semiconductor substrate. A second conductive type first diffusion layer is formed within the semiconductor substrate to be aligned with an edge of one side of the gate electrode. A spacer may be attached to both sidewalls of the gate electrode. A first conductive type second diffusion layer may be formed within the first diffusion layer to leave a distance amounting to a width of the spacer in-between. A second conductive type third diffusion layer may be formed within the semiconductor substrate to be aligned with an edge of the other side of the gate electrode. A first conductive type fourth diffusion layer may be formed over the third diffusion layer, and a first conductive type fifth diffusion layer may be formed under the third diffusion layer.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which light that transmits through a microlens is prevented from being beyond a photodiode region to minimize loss of incident light and to improve low illumination characteristics of the CMOS image sensor. The CMOS image sensor includes a semiconductor substrate including a transistor region and a photodiode region, a gate electrode formed on the semiconductor substrate corresponding to the transistor region, an interlayer dielectric layer formed on an entire surface of the semiconductor substrate including the gate electrode, a microlens formed over the interlayer dielectric layer to condense light, and a metal barrier formed in the interlayer dielectric layer to surround a portion of the interlayer dielectric layer corresponding to the photodiode region and to reflect light in the photodiode region that transmits through the microlens but goes beyond the photodiode region.

Abstract: A CMOS image sensor comprising an epitaxial layer formed on a semiconductor layer, a device isolating layer formed on the epitaxial layer in order to divide the isolating layer into an active region and a device isolating region, the active region including a photo diode region and a transistor region, a drive transistor including a gate electrode formed on the epitaxial layer and a gate spacer formed on both side walls of the gate electrode, a floating diffusion region formed on the epitaxial layer, a trench hole formed in the device isolating layer and epitaxial layer in an area between the photo diode region and the floating diffusion region, a poly wiring formed in the trench hole which extends from the gate electrode of the drive transistor to the photo diode region or the floating diffusion region, and an impurity diffusion region formed by ion implanting the epitaxial layer on the side of the gate spacer.

Abstract: Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

Abstract: Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

Abstract: An image sensor includes an interlayer dielectric including metal lines disposed on a semiconductor substrate; first conductive regions formed on a crystalline semiconductor substrate which is bonded to the semiconductor substrate, and connected with the metal lines; second conductive regions formed between the respective first conductive regions; first conductive-type high-density dopant regions adjoining the first conductive regions, being formed on the crystalline semiconductor substrate; and second conductive-type high-density dopant regions adjoining the second conductive regions, being formed between the respective first conductive-type high-density dopant regions.

Abstract: A CMOS image sensor and method for fabricating same are provided. The CMOS image sensor can include a gate electrode formed on an active area of a first conductive type semiconductor substrate, on which a photodiode area and a transistor area are defined; a low-density second conductive type diffusion region formed on the photodiode area at a first side of the gate electrode; a high-density second conductive the diffusion region formed on the transistor area at a second side of the gate electrode; an insulating layer formed on the semiconductor substrate at both sides of the gate electrode with a thickness less than a thickness of the gate electrode, but greater than a thickness of a gate insulating layer; and insulating layer sidewalls formed on the insulating layer at both sides of the gate electrode.

Abstract: A CMOS image sensor and method for fabricating same are provided. The CMOS image sensor can include a gate electrode formed on an active area of a first conductive type semiconductor substrate, on which a photodiode area and a transistor area are defined; a low-density second conductive type diffusion region formed on the photodiode area at a first side of the gate electrode; a high-density second conductive the diffusion region formed on the transistor area at a second side of the gate electrode; an insulating layer formed on the semiconductor substrate at both sides of the gate electrode with a thickness less than a thickness of the gate electrode, but greater than a thickness of a gate insulating layer; and insulating layer sidewalls formed on the insulating layer at both sides of the gate electrode.

Abstract: A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased.

Abstract: A CMOS image sensor capable of preventing leakage current of a transfer transistor and a method of manufacturing thereof are disclosed. Embodiments relate to a complementary metal-oxide-silicon (CMOS) image sensor including a transfer transistor. The transfer transistor includes an epi-layer formed over a semiconductor substrate defined by a photodiode area, an active area, and a device isolation area. A device isolation film may be formed in the device isolation area. A gate electrode may be formed over the epi-layer for the transfer transistor with a gate insulating film interposed therebetween. A first dopant diffusion area may be formed by implanting first dopant ions into the epi-layer of the photodiode area. A potential well area may be formed in the first dopant diffusion area adjacent to the gate electrode. A second dopant diffusion area may be formed by implanting second dopant ions into the epi-layer of a side-surface floating diffusion area of a gate spacer.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which light that transmits through a microlens is prevented from being beyond a photodiode region to minimize loss of incident light and to improve low illumination characteristics of the CMOS image sensor. The CMOS image sensor includes a semiconductor substrate including a transistor region and a photodiode region, a gate electrode formed on the semiconductor substrate corresponding to the transistor region, an interlayer dielectric layer formed on an entire surface of the semiconductor substrate including the gate electrode, a microlens formed over the interlayer dielectric layer to condense light, and a metal barrier formed in the interlayer dielectric layer to surround a portion of the interlayer dielectric layer corresponding to the photodiode region and to reflect light in the photodiode region that transmits through the microlens but goes beyond the photodiode region.

Abstract: A CMOS image sensor and method of manufacture reduces the problem of electron loss in a floating diffusion area. A method of fabricating a CMOS image sensor includes forming a gate electrode over a first conductive type semiconductor substrate. A second conductive type first diffusion layer is formed within the semiconductor substrate to be aligned with an edge of one side of the gate electrode. A spacer may be attached to both sidewalls of the gate electrode. A first conductive type second diffusion layer may be formed within the first diffusion layer to leave a distance amounting to a width of the spacer in-between. A second conductive type third diffusion layer may be formed within the semiconductor substrate to be aligned with an edge of the other side of the gate electrode. A first conductive type fourth diffusion layer may be formed over the third diffusion layer, and a first conductive type fifth diffusion layer may be formed under the third diffusion layer.