Abstract: A CMOS image sensor comprising an epitaxial layer formed on a semiconductor layer, a device isolating layer formed on the epitaxial layer in order to divide the isolating layer into an active region and a device isolating region, the active region including a photo diode region and a transistor region, a drive transistor including a gate electrode formed on the epitaxial layer and a gate spacer formed on both side walls of the gate electrode, a floating diffusion region formed on the epitaxial layer, a trench hole formed in the device isolating layer and epitaxial layer in an area between the photo diode region and the floating diffusion region, a poly wiring formed in the trench hole which extends from the gate electrode to the drive transistor, and an impurity diffusion region formed by ion implanting the epitaxial layer on the side of the gate spacer.

Abstract: A CMOS image sensor and a method of manufacturing thereof is capable of preventing a feed-through phenomenon. A CMOS image sensor includes a reset transistor which may include an epi-layer formed over a semiconductor substrate. The reset transistor also includes a channel layer formed over the epi-layer to form a channel. A trap area may be formed in a central portion of the reset transistor. A gate electrode may be formed over the epi-layer with a gate insulating film interposed therebetween. A gate spacer may be formed over both sidewalls of the gate electrode. A diffusion area may be formed at both sides of the gate spacer.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which light that transmits through a microlens is prevented from being beyond a photodiode region to minimize loss of incident light and to improve low illumination characteristics of the CMOS image sensor. The CMOS image sensor includes a semiconductor substrate including a transistor region and a photodiode region, a gate electrode formed on the semiconductor substrate corresponding to the transistor region, an interlayer dielectric layer formed on an entire surface of the semiconductor substrate including the gate electrode, a microlens formed over the interlayer dielectric layer to condense light, and a metal barrier formed in the interlayer dielectric layer to surround a portion of the interlayer dielectric layer corresponding to the photodiode region and to reflect light in the photodiode region that transmits through the microlens but goes beyond the photodiode region.

Abstract: A CMOS image sensor and method for fabricating the same is disclosed that reconditions, repairs and/or protects a surface of a photodiode area and improves characteristics of the image sensor. The method includes forming a photodiode area and a plurality of transistors, implanting a predetermined ion into a surface of the photodiode area, and forming a surface oxide film on the surface of the photodiode area by oxidation. Therefore, it is possible to recover or repair the photodiode surface damaged during various fabrication processes, reduce or minimize surface leakage of the photodiode during subsequent processes, and improve image sensor characteristics by increasing incident light on the photodiode.

Abstract: Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

Abstract: A method of fabricating a semiconductor device includes steps of forming at least one shallow-trench isolation region in a semiconductor substrate; forming a photoresist pattern for blocking a photodiode region; sequentially implanting dopant ions and boron ions into the at least one shallow-trench isolation region; and activating the implanted ions. Since germanium ions are implanted before implanting P-type ions in a channel-stop ion implantation process, the lattice structure of the surface of a shallow-trench isolation region is maintained, to thereby allow a deeper penetration of the implanted P-type ions (boron ions), and to prevent the P-type ions from being outwardly diffused according to an increased lattice scattering phenomenon generated upon a thermal process.

Abstract: An image sensor is provided incorporating a first conductive type semiconductor substrate including an active area defined by a device isolation layer; a second conductive type first ion implant area formed as multiple regions in the active area; a second conductive type second ion implant area connecting the multiple regions of the second conductive type first ion implant area; and a first conductive type ion implant area formed on the second conductive type second ion implant area. The multiple regions of the second conductive type first ion implant area can be formed deeply in the substrate. The second conductive type second ion implant can be formed in the substrate at an upper region of the first ion implant area, a middle region of the first ion implant area, or a lower region of the first ion implant area.

Abstract: Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level (i.e. low luminance or high luminance). The CMOS image sensor includes first and second photodiode regions for generating electrons in response to incident light, and a transfer transistor positioned between the first and second photodiodes for receiving the generated electrons transferred from the first and/or second photodiode.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor is provided. The CMOS image sensor can include a photodiode, a transfer transistor (Tx), a reset transistor (Rx), a drive transistor (Dx), and a select transistor (Sx). The CMOS image sensor includes a floating diffusion region between the transfer transistor (Tx) and the reset transistor (Rx). The gate of the drive transistor (Dx) is formed of polysilicon and extends to and is formed on the floating diffusion region.

Abstract: A CMOS image sensor is provided. The CMOS image sensor includes: a photodiode region formed in an active region of a substrate; a transistor formed on a transistor region of the active region of the substrate; a low-concentration diffusion region formed on the photodiode region while being spaced apart from a device isolation region of the substrate; a high-concentration diffusion region formed in the low-concentration diffusion region; and a floating diffusion region formed in a drain region of the transistor.

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same. The CMOS image sensor includes a photodiode area and a floating diffusion area formed on a semiconductor substrate, a transistor formed on the semiconductor substrate between the photodiode area and the floating diffusion area, an isolation layer formed below the transistor, and a channel area formed between the transistor and the isolation layer.

Abstract: A method for manufacturing a CMOS image sensor includes depositing a gate oxide film and polysilicon on a substrate, forming a gate electrode by patterning and etching the gate oxide layer and the polysilicon, wherein the polysilicon of the gate electrode extends to an active region of the substrate, forming spacers on the sidewalls of the gate electrode, forming a mask pattern having an opening over the active region, removing the spacers and the gate oxide layer thereunder in the active region, removing the mask pattern, depositing a protective layer on a pixel region of the substrate, and conducting a salicide formation process on the resulting structure.

Abstract: An image sensor includes a light-incidence regulating layer for compensating for a refractive index deflection between a micro lens array and the atmosphere between the micro lens array and an external lens is disposed at an upper portion of the micro lens array, so that light incident on the micro lens array has a vertical direction irrespective of which portion of the external lens the light is transmitted through. Therefore, the light is incident upon all photo diodes in a semiconductor substrate in a vertical direction, and an amount of light received by the photo diodes is uniform irrespective of the positions of the photo diodes. Photocharges generated and accumulated by the photo diodes are also uniform, and the presentation quality of the image is greatly improved.

Abstract: A method of making a shallow trench-type pixel for a CMOS image sensor is disclosed. The disclosed pixel-fabricating method can increase the active area of a pixel by forming a photodiode in the shape of a shallow trench. In one example, a disclosed method includes forming a CMOS image sensor on an epitaxial wafer, forming a first photoresist layer over said structure, patterning so as to form a shallow trench on a pixel area, and, then, etching, removing said first photoresist layer, forming a second photoresist layer over said structure, pattering so as to form a photodiode junction, and, then, conducting ion-implanting process; and removing said second photoresist layer and conducting a thermal treatment process.

Abstract: A pinned photodiode for a CMOS image sensor and fabricating method thereof is disclosed. The disclosed pinned photodiode can reduce a probability of recombination of excess electrons by forming a second potential well having a center-cross form across a photodiode area. The disclosed pinned photodiode-fabricating method comprises forming a photodiode on a substrate, forming a first potential well between the substrate and the photodiode, and forming a second potential well having a center-cross form across said photodiode, which is positioned more deeply than said first potential well.

Abstract: A pinned photodiode for a CMOS image sensor and fabricating method thereof is disclosed. The disclosed pinned photodiode can reduce a probability of recombination of excess electrons by forming a second potential well having a center-cross form across a photodiode area. The disclosed pinned photodiode-fabricating method comprises forming a photodiode on a substrate, forming a first potential well between the substrate and the photodiode, and forming a second potential well having a center-cross form across said photodiode, which is positioned more deeply than said first potential well.

Abstract: A pinned photodiode for a CMOS image sensor and fabricating method thereof is disclosed. The disclosed pinned photodiode can reduce a probability of recombination of excess electrons by forming a second potential well having a center-cross form across a photodiode area. The disclosed pinned photodiode-fabricating method comprises forming a photodiode on a substrate, forming a first potential well between the substrate and the photodiode, and forming a second potential well having a center-cross form across said photodiode, which is positioned more deeply than said first potential well.

Abstract: An image sensor includes a light-incidence regulating layer for compensating for a refractive index deflection between a micro lens array and the atmosphere between the micro lens array and an external lens is disposed at an upper portion of the micro lens array, so that light incident on the micro lens array has a vertical direction irrespective of which portion of the external lens the light is transmitted through. Therefore, the light is incident upon all photo diodes in a semiconductor substrate in a vertical direction and an amount of light received by the photo diodes is uniform irrespective of the positions of the photo diodes. Photocharges generated and accumulated by the photo diodes are also uniform, and the presentation quality of the image is greatly improved.

Abstract: A pinned photodiode for a CMOS image sensor and fabricating method thereof is disclosed. The disclosed pinned photodiode can reduce a probability of recombination of excess electrons by forming a second potential well having a center-cross form across a photodiode area. The disclosed pinned photodiode-fabricating method comprises forming a photodiode on a substrate, forming a first potential well between the substrate and the photodiode, and forming a second potential well having a center-cross form across said photodiode, which is positioned more deeply than said first potential well.

Abstract: A method of making a shallow trench-type pixel for a CMOS image sensor is disclosed. The disclosed pixel-fabricating method can increase the active area of a pixel by forming a photodiode in the shape of a shallow trench. In one example, a disclosed method includes forming a CMOS image sensor on an epitaxial wafer, forming a first photoresist layer over said structure, patterning so as to form a shallow trench on a pixel area, and, then, etching, removing said first photoresist layer, forming a second photoresist layer over said structure, pattering so as to form a photodiode junction, and, then, conducting ion-implanting process; and removing said second photoresist layer and conducting a thermal treatment process.