Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes an ammonium base-containing polymer compound and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

Abstract: A method for fabricating a semiconductor device includes forming an interlayer insulating film over a semiconductor substrate. The interlayer insulating film is selectively etched to form a hole defining a storage node region. A lower electrode is formed in the hole. A support layer is formed over the lower electrode. The support layer fills an upper part of the hole and exposes the interlayer insulating film. A dip-out process is performed to remove the interlayer insulating film. The supporting layer is removed to expose the lower electrode. A dielectric film is formed over the semiconductor substrate including the lower electrode. A plate electrode is formed over the semiconductor substrate to fill the dielectric film and the lower electrode.

Abstract: A method for forming a fine pattern of a semiconductor device overcomes resolution limits of exposure equipment. The method includes forming a first photoresist pattern over an underlying layer formed over a semiconductor substrate. An amorphous carbon film and a second photoresist film are sequentially deposited over the first photoresist pattern. The second photoresist film and the amorphous carbon film are planarized to expose the first photoresist pattern. A thick portion and a thin portion of the amorphous carbon film is formed. The first photoresist pattern and the second photoresist film are removed. Etching is performed on the thin portion of the amorphous carbon film and the underlying layer using the thick portion of the amorphous carbon film as an etch mask. The thick portion of the amorphous carbon film is removed to expose a fine pattern of the underlying layer.

Abstract: A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the inter-layer insulation layer; forming a stack structure formed by stacking a first protective barrier layer and a sacrificial layer on the inter-layer insulation layer; performing an etching process to the first protective barrier layer and the sacrificial layer in a manner to have a trenches opening upper portions of the storage node contact plugs; forming storage nodes having a cylinder type inside of the trenches; forming a second protective barrier layer filling the inside of the storage nodes having the cylinder type; removing the sacrificial layer through performing a wet dip-out process; removing the first protective barrier layer and the second protective barrier layer; and sequentially forming a dielectric layer and a plate node on the storage nodes.

Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

Abstract: A method for forming a fine pattern in a semiconductor device is provided. In one aspect, the method can construct a fine pattern in semiconductor devices. The fine pattern has a critical dimension that overcomes the resolution limit of an exposure equipment.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: A method for fabricating a semiconductor device includes forming an interlayer insulating film over a semiconductor substrate. The interlayer insulating film is selectively etched to form a hole defining a storage node region. A lower electrode is formed in the hole. A support layer is formed over the lower electrode. The support layer fills an upper part of the hole and exposes the interlayer insulating film. A dip-out process is performed to remove the interlayer insulating film. The supporting layer is removed to expose the lower electrode. A dielectric film is formed over the semiconductor substrate including the lower electrode. A plate electrode is formed over the semiconductor substrate to fill the dielectric film and the lower electrode.

Abstract: Disclosed herein are a liquid composition for immersion lithography and a lithography method using the composition. The liquid composition includes at least one nonionic surfactant selected from the group comprising of a polyvinyl alcohol, a pentaerythritol-based compound, a polymer containing an alkylene oxide, and a compound represented by Formula I: wherein R is a linear or branched, substituted C1-C40 alkyl, and n is an integer ranging from 10 to 10,000. The surface tension of the liquid composition is reduced by the nonionic surfactant, thereby solving the problem that the liquid composition is not completely filled or is partially concentrated on a wafer having a fine topology and removing micro bubbles between the photoresist film and the liquid composition.

Abstract: A method for forming a fine pattern in a semiconductor device is provided. In one aspect, the method can construct a fine pattern in semiconductor devices. The fine pattern has a critical dimension that overcomes the resolution limit of an exposure equipment.

Abstract: The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Abstract: A method for forming a fine pattern of a semiconductor device overcomes resolution limits of exposure equipment. The method includes forming a first photoresist pattern over an underlying layer formed over a semiconductor substrate. An amorphous carbon film and a second photoresist film are sequentially deposited over the first photoresist pattern. The second photoresist film and the amorphous carbon film are planarized to expose the first photoresist pattern. A thick portion and a thin portion of the amorphous carbon film is formed. The first photoresist pattern and the second photoresist film are removed. Etching is performed on the thin portion of the amorphous carbon film and the underlying layer using the thick portion of the amorphous carbon film as an etch mask. The thick portion of the amorphous carbon film is removed to expose a fine pattern of the underlying layer.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: <Chemical Formula> wherein, R? and R? individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.