Patents by Inventor Keun Kyu Kong

Keun Kyu Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6368773
    Abstract: The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: April 9, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik, Jin Soo Kim
  • Novel photoresist cross-linker and photoresist composition comprising the same
    Publication number: 20020019560
    Abstract: The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources.
    Type: Application
    Filed: September 11, 2001
    Publication date: February 14, 2002
    Inventors: Keun Kyu Kong, Jae Chang Jung, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik
  • Process for forming photoresist pattern by using gas phase amine treatment
    Publication number: 20010053590
    Abstract: The present invention provides a process for producing a photoresist pattern. In particular, the present invention provides a process for forming a photoresist pattern which reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect of the present invention, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.
    Type: Application
    Filed: May 10, 2001
    Publication date: December 20, 2001
    Inventors: Jae Chang Jung, Cha Won Koh, Jin Soo Kim, Sung Eun Hong, Keun Kyu Kong, Ki Ho Baik
  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6322948
    Abstract: The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.
    Type: Grant
    Filed: February 7, 2000
    Date of Patent: November 27, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Jin Soo Kim, Ki Ho Baik
  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6312868
    Abstract: The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources.
    Type: Grant
    Filed: February 9, 2000
    Date of Patent: November 6, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Keun Kyu Kong, Jae Chang Jung, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik
  • Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    Patent number: 6291131
    Abstract: The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same.
    Type: Grant
    Filed: August 26, 1999
    Date of Patent: September 18, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Chi Hyeong Roh, Min Ho Jung, Keun Kyu Kong, Geun Su Lee, Ki Ho Baik
  • Over-coating composition for photoresist, and processes for forming photoresist patterns using the same
    Publication number: 20010003030
    Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
    Type: Application
    Filed: December 1, 2000
    Publication date: June 7, 2001
    Inventors: Jae Chang Jung, Keun Kyu Kong, Cha Won Koh, Jin Soo Kim, Ki Ho Baik
  • Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin
    Patent number: 6165672
    Abstract: The present invention relates to a novel maleimide- or alicyclic olefin-based monomer, a copolymer resin of these monomers and a photoresist using the copolymer resin. The maleimide-introduced copolymer resin according to the present invention can easily be copolymerized with alicyclic olefin unit, has a physical property capable of enduring in 2.38% TMAH developer and increases adhesion of ArF or KrF photoresist. The photoresist film using a copolymer resin according to the present invention can be applied to highly integrate semiconductor devices.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: December 26, 2000
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Cheol Kyu Bok, Ki Ho Baik