Patents by Inventor Kevin A. Boulais
Kevin A. Boulais has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8399817Abstract: A micro designator dart engages a target to allow for designation and tracking of the target by transmitting a radio-frequency identification code. The housing of the micro designator dart is configured to enclose its components and deform upon impact with a target to allow a target-engaging member to physically attach the micro designator dart to the target. Also upon impact with the target, an impact-sensitive triggering mechanism in the micro designator dart activates a power source, causing a transmitter to send a predetermined coded infrared signal to the seeker unit of a precision guided munitions system. The micro designator dart may also include a self-destruct device.Type: GrantFiled: August 12, 2011Date of Patent: March 19, 2013Assignee: The United States of America as represented by the Secretary of the NavyInventors: Alfredo N. Rayms-Keller, Francisco Santiago, Victor H. Gehman, Jr., Karen J. Long, Kevin A. Boulais, Peter L. Wick, Alexander Strugatsky
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Patent number: 8400225Abstract: An optically tunable cavity for an electronic device concurrently achieves high bandwidth (for example, at least about 10 percent, typically greater than about 50 percent) with high DC-RF efficiency (for example, at least about 50 percent, typically greater than about 85 percent). The electronic device may be a vacuum electronic device, including linear-beam and cross-field devices, with either an input circuit or an output circuit, or both, containing a photocapacitance-controlled resonator embedded such that a laser beam can impinge upon a semiconductor gap of the resonator. The laser beam may instantaneously change the resonant mode of the overall loaded cavity, thus allowing for amplification or oscillation of the desired frequency throughout the vacuum electronic device.Type: GrantFiled: August 10, 2011Date of Patent: March 19, 2013Assignee: The United States of America as represented by the Secretary of the NavyInventors: Walter D. Sessions, Kevin A. Boulais
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Publication number: 20120313080Abstract: A photocapacitor device is provided for responding to a photon having at least a specified energy. The photocapacitive device includes a first portion composed of a photocapacitive material; a second portion composed of a non-photocapacitive material; and a depletion region disposed between the first and second portions. The ph otocapacitive and non-photocapacitive materials respectively have first and second Fermi-energy differences, with the second Fermi-energy difference being higher than the first Fermi-energy difference.Type: ApplicationFiled: February 25, 2011Publication date: December 13, 2012Applicant: United States Government, as represented by the Secretary of the NavyInventors: Kevin A. Boulais, Donald W. Rule, Karen J. Long, Francisco Santiago, Alfredo N. Rayms-Keller, Victor H. Gehman, JR.
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Patent number: 8311373Abstract: A detector is provided for sampling and identifying a material, such as a medium in which the detector is disposed. The detector includes an annular photonic crystal fiber, first and second electrodes, an electrical power supply, an illumination source and an analyzer. The fiber has opposite longitudinal ends, surrounds a center core tube and includes fused capillary tubes. The electrodes are disposed between the fiber's longitudinal ends. The electrical power supply connects between the electrodes. The illumination source emits light into the core tube from one of the opposite ends. The analyzer for compares an emission pattern from light transverse to the fiber against an established pattern, and indicates match in response to correspondence between the patterns. The annular structure has a two-dimensional optical photonic band-gap. The analyzer monitors the emission pattern by optical frequency domain reflectometry or optical time domain reflectometry.Type: GrantFiled: July 22, 2009Date of Patent: November 13, 2012Assignee: The United States of America as Represented by the Secretary of the NavyInventors: Francisco Santiago, Alfredo N. Rayms-Keller, Victor H. Gehman, Jr., Karen J. Long, Kevin A. Boulais
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Patent number: 7864394Abstract: A dynamically variable lens is made from actively tunable electromagnetic metamaterial cells. The lens operates on electromagnetic radiation including: radio frequency waves, microwaves, teraherz waves, near infrared waves, infrared waves and visible waves. The focal length of the lens is changed at a selected frequency. In the alternative, the frequency of radiation operated on is changed as a function of time. A third alternative provides precise control of the index of refraction of the lens. The index of refraction is varied progressively across the lens from one edge to the opposite edge causing the radiation to be directed at an angle.Type: GrantFiled: April 9, 2009Date of Patent: January 4, 2011Assignee: The United States of America as represented by the Secretary of the NavyInventors: Donald W. Rule, Kevin A. Boulais, Francisco Santiago
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Patent number: 7745330Abstract: Carbon nanotube apparatus, and methods of carbon nanotube modification, include carbon nanotubes having locally modified properties with the positioning of the modifications being controlled. More specifically, the positioning of nanotubes on a substrate with a deposited substance, and partially vaporizing part of the deposited substance etches the nanotubes. The modifications of the carbon nanotubes determine the electrical properties of the apparatus and applications such as a transistor or Shockley diode. Other applications of the above mentioned apparatus include a nanolaboratory that assists in study of merged quantum states between nanosystems and a macroscopic host system.Type: GrantFiled: July 31, 2007Date of Patent: June 29, 2010Assignee: The United States of America as represented by the Secretary of the NavyInventors: Francisco Santiago, Victor H. Gehman, Jr., Karen J. Long, Kevin A. Boulais
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Patent number: 7678707Abstract: Carbon nanotube apparatus, and methods of carbon nanotube modification, include carbon nanotubes having locally modified properties with the positioning of the modifications being controlled. More specifically, the positioning of nanotubes on a substrate with a deposited substance, and partially vaporizing part of the deposited substance etches the nanotubes. The modifications of the carbon nanotubes determine the electrical properties of the apparatus and applications such as a transistor or Shockley diode. Other applications of the above mentioned apparatus include a nanolaboratory that assists in study of merged quantum states between nanosystems and a macroscopic host system.Type: GrantFiled: July 31, 2007Date of Patent: March 16, 2010Assignee: The United States of America as represented by the Secretary of the NavyInventors: Francisco Santiago, Victor H. Gehman, Jr., Karen J. Long, Kevin A. Boulais
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Patent number: 7597867Abstract: Carbon nanotube apparatus, and methods of carbon nanotube modification, include carbon nanotubes having locally modified properties with the positioning of the modifications being controlled. More specifically, the positioning of nanotubes on a substrate with a deposited substance, and partially vaporizing part of the deposited substance etches the nanotubes. The modifications of the carbon nanotubes determine the electrical properties of the apparatus and applications such as a transistor or Shockley diode. Other applications of the above mentioned apparatus include a nanolaboratory that assists in study of merged quantum states between nanosystems and a macroscopic host system.Type: GrantFiled: July 31, 2007Date of Patent: October 6, 2009Assignee: The United States of America as represented by the Secretary of the NavyInventors: Francisco Santiago, Victor H. Gehman, Jr., Karen J. Long, Kevin A. Boulais
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Patent number: 7525711Abstract: In one general aspect, a tunable electromagnetic metamaterial as described herein includes a substrate and an array of split ring resonators formed on the substrate. At least one of the split ring resonators is a capacitively tuned split ring resonator. The capacitively tuned split ring resonator includes a structure having a gap and is formed of an electrically conductive material. The capacitively tuned split ring resonator also includes a region of photo-capacitive material formed in close proximity to the structure such that the capacitance of the metamaterial is changed when illuminated by controlling electromagnetic radiation having a selected range of wavelengths.Type: GrantFiled: August 16, 2006Date of Patent: April 28, 2009Assignee: The United States of America as represented by the Secretary of the NavyInventors: Donald W. Rule, Kevin A. Boulais, Francisco Santiago
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Patent number: 7348592Abstract: Carbon nanotube apparatus, and methods of carbon nanotube modification, include carbon nanotubes having locally modified properties with the positioning of the modifications being controlled. More specifically, the positioning of nanotubes on a substrate with a deposited substance, and partially vaporizing part of the deposited substance etches the nanotubes. The modifications of the carbon nanotubes determine the electrical properties of the apparatus and applications such as a transistor or Shockley diode. Other applications of the above mentioned apparatus include a nanolaboratory that assists in study of merged quantum states between nanosystems and a macroscopic host system.Type: GrantFiled: September 30, 2005Date of Patent: March 25, 2008Assignee: The United States of America as represented by the Secretary of the NavyInventors: Francisco Santiago, Victor H. Gehman, Jr., Karen J. Long, Kevin A. Boulais
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Publication number: 20070243717Abstract: Carbon nanotube apparatus, and methods of carbon nanotube modification, include carbon nanotubes having locally modified properties with the positioning of the modifications being controlled. More specifically, the positioning of nanotubes on a substrate with a deposited substance, and partially vaporizing part of the deposited substance etches the nanotubes. The modifications of the carbon nanotubes determine the electrical properties of the apparatus and applications such as a transistor or Shockley diode. Other applications of the above mentioned apparatus include a nanolaboratory that assists in study of merged quantum states between nanosystems and a macroscopic host system.Type: ApplicationFiled: September 30, 2005Publication date: October 18, 2007Inventors: Francisco Santiago, Victor Gehman, Karen Long, Kevin Boulais
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Patent number: 6881669Abstract: An epitaxial barrier material provides not only a unique growth medium for growing single crystal structures of elemental metal thereon, but also provides an effective diffusion barrier at extremely thin thicknesses against migration of atoms from the metallization layer into an adjacent semiconductor substrate or low dielectric insulation layer. This invention is particularly advantageous for forming single crystal, transition metal conductor lines, contacts, filled trenches, and/or via plugs, and especially conductor structures based on transition metals of copper, silver, gold, or platinum. These metals are highly attractive for interconnect strategies on account of there respective low resistivity and high reliability characteristics. Processes for making the barrier film in a semiconductor device are also covered.Type: GrantFiled: May 9, 2001Date of Patent: April 19, 2005Assignee: The United States of America as represented by the Secretary of the NavyInventors: Tak Kin Chu, Francisco Santiago, Kevin A. Boulais
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Patent number: 6734558Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: August 20, 1998Date of Patent: May 11, 2004Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6720654Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: August 20, 1998Date of Patent: April 13, 2004Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6566247Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing different types of precursors, such as metal halides (e.g., BaF2 and SrF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate.Type: GrantFiled: July 5, 2001Date of Patent: May 20, 2003Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Publication number: 20020153610Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: ApplicationFiled: August 20, 1998Publication date: October 24, 2002Inventors: MICHAEL F. STUMBORG, FRANCISCO SANTIAGO, TAK KIN CHU, KEVIN A. BOULAIS
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Patent number: 6465887Abstract: An epitaxial barrier material provides not only a unique growth medium for growing single crystal structures of elemental metal thereon, but also provides an effective diffusion barrier at extremely thin thicknesses against migration of atoms from the metallization layer into an adjacent semiconductor substrate or low dielectric insulation layer. This invention is particularly advantageous for forming single crystal, transition metal conductor lines, contacts, filled trenches, and/or via plugs, and especially conductor structures based on transition metals of copper, silver, gold, or platinum. These metals are highly attractive for interconnect strategies on account of there respective low resistivity and high reliability characteristics. Processes for making the barrier film in a semiconductor device are also covered.Type: GrantFiled: May 3, 2000Date of Patent: October 15, 2002Assignee: The United States of America as represented by the Secretary of the NavyInventors: Tak Kin Chu, Francisco Santiago, Kevin A. Boulais
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Publication number: 20020025675Abstract: An epitaxial barrier material provides not only a unique growth medium for growing single crystal structures of elemental metal thereon, but also provides an effective diffusion barrier at extremely thin thicknesses against migration of atoms from the metallization layer into an adjacent semiconductor substrate or low dielectric insulation layer. This invention is particularly advantageous for forming single crystal, transition metal conductor lines, contacts, filled trenches, and/or via plugs, and especially conductor structures based on transition metals of copper, silver, gold, or platinum. These metals are highly attractive for interconnect strategies on account of there respective low resistivity and high reliability characteristics. Processes for making the barrier film in a semiconductor device are also covered.Type: ApplicationFiled: May 9, 2001Publication date: February 28, 2002Inventors: Tak Kin Chu, Francisco Santiago, Kevin A. Boulais
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Patent number: 6351036Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: August 20, 1998Date of Patent: February 26, 2002Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Publication number: 20010040238Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing different types of precursors, such as metal halides (e.g., BaF2 and SrF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate.Type: ApplicationFiled: July 5, 2001Publication date: November 15, 2001Inventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais