Patents by Inventor Kevin A. Boulais
Kevin A. Boulais has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20010035581Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: ApplicationFiled: August 20, 1998Publication date: November 1, 2001Inventors: MICHAEL F. STUMBORG, FRANCISCO SANTIAGO, TAK KIN CHU, KEVIN A. BOULAIS
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Patent number: 6306212Abstract: An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise, could impair device performance. To accomplish this, the insulator layer is formed on a gallium arsenide substrate as an integral composite or variegated structure including (a) a uniform homogenous film of Group IIa metal atoms attached directly onto a gallium arsenide substrate surface in the form of a monolayer, and (b) a single crystal epitaxial film of a Group IIa metal fluoride deposited on the monolayer.Type: GrantFiled: August 2, 2000Date of Patent: October 23, 2001Assignee: The United States of America as represented by the Secretary of the NavyInventors: Francisco Santiago, Tak Kin Chu, Michael F. Stumborg, Kevin A. Boulais
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Patent number: 6291876Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing different types of precursors, such as metal halides (e.g., BaF2 and SrF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate.Type: GrantFiled: August 20, 1998Date of Patent: September 18, 2001Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6211066Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: September 22, 1999Date of Patent: April 3, 2001Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6208001Abstract: An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise, could impair device performance. To accomplish this, the insulator layer is formed on a gallium arsenide substrate as an integral composite or variegated structure including (a) a uniform homogenous film of Group IIa metal atoms attached directly onto a gallium arsenide substrate surface in the form of a monolayer, and (b) a single crystal epitaxial film of a Group IIa metal fluoride deposited on the monolayer.Type: GrantFiled: November 23, 1998Date of Patent: March 27, 2001Assignee: The United States of America as represented by the Secretary of the NavyInventors: Francisco Santiago, Tak Kin Chu, Michael F. Stumborg, Kevin A. Boulais
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Patent number: 6188134Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: August 20, 1998Date of Patent: February 13, 2001Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6171953Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: December 18, 1998Date of Patent: January 9, 2001Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6144050Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: August 20, 1998Date of Patent: November 7, 2000Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6083818Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: December 18, 1998Date of Patent: July 4, 2000Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 6077775Abstract: Process for making a semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a metal halide as a precursor (e.g., BaF.sub.2 or SrF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of a temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.Type: GrantFiled: August 20, 1998Date of Patent: June 20, 2000Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael F. Stumborg, Francisco Santiago, Tak Kin Chu, Kevin A. Boulais
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Patent number: 5271328Abstract: A field coil stator of an electrical generator is fixed to the fuse body of n explosive projectile within which the rotor of the generator is supported for limited rotation dampened by a pendulum to effectively induce an electrical output from the stator field coils during and after launch of the projectile from an internally rifled gun barrel. The rotor is rotationally isolated from the stator during launch by shock absorbing means to avoid defeat of the pendulum dampening action on the rotor.Type: GrantFiled: January 22, 1993Date of Patent: December 21, 1993Assignee: The United States of America as represented by the Secretary of the NavyInventors: Kevin Boulais, Wayne L. Hopkins
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Patent number: 5132586Abstract: A microchannel plate device utilizing a semiconducting bulk material is cacterized by electron emissions of high output current density and efficiency. The channel passages in the plate device which are square in cross-section accommodates a larger open area ratio at the input and output plate surfaces. An extended range of high electron emission applications for the plate device is provided. Such applications may include a photocathode installation to which a modulation pulse input is applied under low voltages isolated from high post-accelerating voltages.Type: GrantFiled: April 4, 1991Date of Patent: July 21, 1992Assignee: The United States of America as represented by the Secretary of the NavyInventors: Kevin Boulais, Joon Choe