Abstract: An apparatus of a wafer processing apparatus includes at least one memory and logic, at least a portion of which is implemented in circuitry of the wafer processing apparatus including at least one processor coupled to the at least one memory. The logic may provide a 3D model of a surface of a wafer, the wafer defining a wafer plane; and modify a surface feature in a Z-direction along the surface of the wafer based on at least one of: an X-critical dimension (CD) extending along an X-direction of the wafer plane, and a Y-CD extending along a Y direction of the wafer plane.

Abstract: A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity.

Abstract: A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

Abstract: A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having a conductive beam optic, the beam optic having a varied geometry configured to generate a concentrated electric field proximate the beam optic. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the one or more beam optics, in parallel, to selectively (e.g., individually) generate plasma in an area corresponding to the concentrated electric field. By providing custom-shaped ion beam optics, plasma density is strategically enhanced in areas where surface contamination is most prevalent, thus improving cleaning efficiency and minimizing tool down time.

Abstract: Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

Abstract: A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times.

Abstract: A system and method for dynamic heating of a workpiece during processing is disclosed. The system includes an ion source and a plurality of LEDs arranged in an array, which are directed at a portion of the surface of the workpiece. The LEDs are selected so that they emit light in a frequency range that is readily absorbed by the workpiece, thus heating the workpiece. In some embodiments, the LEDs heat a portion of the workpiece just before that portion is processed by an ion beam. In another embodiment, the LEDs heat a portion of the workpiece as it is being processed. The LEDs may be arranged in an array, which may have a width that is at least as wide as the width of the ion beam. The array also has a length, perpendicular to its width, having one or more rows of LEDs.