Abstract: An electronic system having a power efficient differential signal between a first and second electronic unit. A controller uses information, such as compliance with data transmission rate requirement and bit error rate (BER) versus a BER threshold to control power modes such that a minimal amount of power is required. Amplitude of transmission and single ended or differential transmission of data are examples of the power modes. The controller also factors in a failing phase in a differential signal in selecting a minimal power mode that satisfies the transmission rate requirement of the BER threshold.

Abstract: Methods and systems for calibrating parameters for communication between a controller and a memory device. A memory controller may be configured to calibrate one or more of the read latency and/or the latency window of a memory controller such that a data signal and a data strobe signal are received by the memory controller within the latency window of the memory controller.

Abstract: Providing heterogeneous recovery in a redundant memory system that includes a memory controller, a plurality of memory channels in communication with the memory controller, an error detection code mechanism configured for detecting a failing memory channel, and an error recovery mechanism. The error recovery mechanism is configured for receiving notification of the failing memory channel, for performing a recovery operation on the failing memory channel while other memory channels are performing normal system operations, for bringing the recovered channel back into operational mode with the other memory channels for store operations, for continuing to mark the recovered channel to guard against stale data, for removing any stale data after the recovery operation is complete, and for removing the mark on the recovered channel to allow the normal system operations with all of the memory channels, the removing based on the removing any stale data being complete.

Abstract: A computer implemented method for providing homogeneous recovery in a redundant memory system. The method includes receiving a notification that a memory channel has failed, where the memory channel is one of a plurality of memory channels in a memory system. New operations are blocked from starting on the memory channels in response to the notification, and any pending operations on the memory channels are completed in response to the notification. A recovery operation is performed on the memory channels in response to the completing. The new operations are started on at least a first subset of the memory channels in response to the recovery operation completing. The memory system is configured to operate with the first subset of the memory channels.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: A computer memory, having one or more of a semiconductor memory device having an internal memory array comprising a plurality of semiconductor dynamic random access memory (DRAM) cells arranged in a matrix of rows and columns, and provided as a memory module rank of such memory devices arranged in an array on a DIMM of one or more of said semiconductor memory device on a substrate which can be coupled via a memory device data interface to a memory system as a memory subsystem, each of said memory device having a low power shut-down state that can be activated using a common memory data interface. Control of power to a DRAM issues over the data interface two commands to a DRAM power control command decode, a power-state program signal and a power-state reset signal as a power-state control commands to control the power state of said DRAM, and to activate for READ/WRITE a memory cell as a normal active or spare device.

Abstract: Methods and systems for calibrating parameters for communication between a controller and a memory device. A memory controller may be configured to calibrate one or more of the write latency and/or the latency window of a memory device such that a data signal and a data strobe signal are received by the memory device within the latency window of the memory device.

Abstract: Providing heterogeneous recovery in a redundant memory system that includes a memory controller, a plurality of memory channels in communication with the memory controller, an error detection code mechanism configured for detecting a failing memory channel, and an error recovery mechanism. The error recovery mechanism is configured for receiving notification of the failing memory channel, for performing a recovery operation on the failing memory channel while other memory channels are performing normal system operations, for bringing the recovered channel back into operational mode with the other memory channels for store operations, for continuing to mark the recovered channel to guard against stale data, for removing any stale data after the recovery operation is complete, and for removing the mark on the recovered channel to allow the normal system operations with all of the memory channels, the removing in response to the removing any stale data being complete.

Abstract: A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.

Abstract: A communication interface device, system, method, and design structure for error correcting code (ECC) protected quasi-static bit communication (SBC) on a high-speed bus are provided. The communication interface device includes high-speed sampling logic to capture high-speed data from the high-speed bus using a high-speed sampling clock and SBC sampling logic to capture SBC samples from the high-speed bus using an SBC sampling clock. The SBC sampling clock is slower than the high-speed sampling clock. The communication interface device also includes an SBC finite state machine (FSM) to detect a received SBC command in response to a static pattern persisting for a predetermined number of the SBC samples and command decoding logic to decode the received SBC command.

Abstract: A method for providing frame start indication that includes receiving a data transfer via a channel in a memory system. The receiving is in response to a request, and at an indeterminate time relative to the request. It is determined whether the data transfer includes a frame start indicator. The data transfer and “n” subsequent data transfers are captured in response to determining that the data transfer includes a frame start indicator. The data transfer and the “n” subsequent data transfers make up a data frame, where “n” is greater than zero.

Abstract: A method and apparatus for determining correct timing for receiving, in a host in a memory system, of a normal toggle transmitted by an addressed memory chip on a bidirectional data strobe. An offset in the data strobe is established, either by commanding the addressed memory chip, in a training period, to drive the data strobe to a known state, except during transmission of a normal toggle, or by providing a voltage offset between a true and a complement phase in the data strobe, or by providing a circuit bias in a differential receiver on the host the receives the data strobe. A series of read commands are transmitted by the host to the addressed memory chip, which responds by transmitting the normal toggle. Timing of reception of the normal toggle as received by the host chip is adjusted until the normal toggle is correctly received.

Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/ Parity register.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: A memory system, having indeterminate read data latency, that includes a memory controller and one or more hub devices. The memory controller is configured for receiving data transfers via an upstream channel and for determining whether all or a subset of the data transfers include a data frame by detecting a frame start indicator. The data frame includes an identification tag that is utilized by the memory controller to associate the data frame with a corresponding read instruction issued by the memory controller. The one or more hub devices are in communication with the memory controller in a cascade interconnect manner via the upstream channel and a downstream channel. Each hub device is configured for receiving the data transfers via the upstream channel or the downstream channel and for determining whether all or a subset of the data transfers include a data frame by detecting the frame start indicator.

Abstract: A method and apparatus for determining correct timing for receiving, in a host in a memory system, of a normal toggle transmitted by an addressed memory chip on a bidirectional data strobe. An offset in the data strobe is established, either by commanding the addressed memory chip, in a training period, to drive the data strobe to a known state, except during transmission of a normal toggle, or by providing a voltage offset between a true and a complement phase in the data strobe, or by providing a circuit bias in a differential receiver on the host the receives the data strobe. A series of read commands are transmitted by the host to the addressed memory chip, which responds by transmitting the normal toggle. Timing of reception of the normal toggle as received by the host chip is adjusted until the normal toggle is correctly received.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: A communication interface device, system, method, and design structure for error correcting code (ECC) protected quasi-static bit communication (SBC) on a high-speed bus are provided. The communication interface device includes high-speed sampling logic to capture high-speed data from the high-speed bus using a high-speed sampling clock and SBC sampling logic to capture SBC samples from the high-speed bus using an SBC sampling clock. The SBC sampling clock is slower than the high-speed sampling clock. The communication interface device also includes an SBC finite state machine (FSM) to detect a received SBC command in response to a static pattern persisting for a predetermined number of the SBC samples and command decoding logic to decode the received SBC command.