Abstract: A memory system is provided that implements an asynchronous boundary in a memory module. The memory system comprises a memory hub device integrated in a memory module. The memory system also comprises a set of memory devices coupled to the memory hub device. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system further comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented within the memory hub device of the memory module.

Abstract: An electronic system having a power efficient differential signal between a first and second electronic unit. A controller uses information, such as compliance with data transmission rate requirement and bit error rate (BER) versus a BER threshold to control power modes such that a minimal amount of power is required. Amplitude of transmission and single ended or differential transmission of data are examples of the power modes. The controller also factors in a failing phase in a differential signal in selecting a minimal power mode that satisfies the transmission rate requirement of the BER threshold.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: A memory system is provided that enhances the memory bandwidth available through a memory module. The memory system includes a memory hub device integrated into a memory module, a first memory device data interface integrated that communicates with a first set of memory devices and a second memory device data interface integrated that communicates with a second set of memory devices. In the memory system, the first set of memory devices are spaced in a first plane and coupled to a substrate of the memory module and the second set of memory devices are spaced in a second plane above the first plane and coupled to the substrate. In the memory system, data buses of the first set of memory devices are coupled to the substrate separately from data buses of the second set of memory devices.

Abstract: A communication interface device, system, method, and design structure for providing dynamic segment sparing and repair in a memory system. The communication interface device includes drive-side switching logic including driver multiplexers to select driver data for transmitting on link segments of a bus, and receive-side switching logic including receiver multiplexers to select received data from the link segments of the bus. The bus includes multiple data link segments, a clock link segment, and at least two spare link segments selectable by the drive-side switching logic and the receive-side switching logic to replace one or more of the data link segments and the clock link segment.

Abstract: Memory systems are disclosed that include a memory controller; an outbound link, the memory controller connected to the outbound link, the outbound link comprising a number of conductive pathways that conduct memory signals from the memory controller to memory buffer devices in a first memory layer; and at least two memory buffer devices in a first memory layer, each memory buffer device in the first memory layer connected to the outbound link to receive memory signals from the memory controller.

Abstract: A method for enhancing the memory bandwidth available through a memory module of a memory system is provided. The memory system includes a memory hub device integrated in a memory module. The memory system includes a first memory device data interface integrated in the memory hub device that communicates with a first set of memory devices integrated in the memory module. The memory system also includes a second memory device data interface integrated in the memory hub device that communicates with a second set of memory devices integrated in the memory module. In the memory system, the first set of memory devices are separate from the second set of memory devices. In the memory system, the first and second set of memory devices are communicated with by the memory hub device via the separate first and second memory device data interfaces.

Abstract: A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.

Abstract: A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.

Abstract: A memory system is provided that enhances the memory bandwidth available through a memory module. The memory system includes a memory hub device integrated in a memory module. The memory system includes a first memory device data interface integrated in the memory hub device that communicates with a first set of memory devices integrated in the memory module. The memory system also includes a second memory device data interface integrated in the memory hub device that communicates with a second set of memory devices integrated in the memory module. In the memory system, the first set of memory devices are separate from the second set of memory devices. In the memory system, the first and second set of memory devices are communicated with by the memory hub device via the separate first and second memory device data interfaces.

Abstract: A memory system is provided that supports partial cache line read operations to a memory module to reduce read data traffic on a memory channel. The memory system comprises a memory hub device integrated in the memory module and a set of memory devices coupled to the memory hub device. The memory hub comprises burst logic integrated in the memory hub device. The burst logic determines an amount of read data to be transmitted from the set of memory devices and generates a burst length field corresponding to the amount of read data. The memory hub also comprises a memory hub controller integrated in the memory hub device. The memory hub controller controls the amount of read data that is transmitted using the burst length field. The memory hub device transmits the amount of read data that is equal to or less than a conventional data burst amount of data.

Abstract: A system for implementing a memory subsystem command interface, the system including a cascaded interconnect system including one or more memory modules, a memory controller and a memory bus. The memory controller generates a data frame that includes a plurality of commands. The memory controller and the memory module are interconnected by a packetized multi-transfer interface via the memory bus and the frame is transmitted to the memory modules via the memory bus.

Abstract: A memory system is provided that enhances the memory bandwidth available through a memory module. The memory system includes a memory controller and at least one memory module coupled to the memory controller. In the memory systems, each memory module comprises at least one memory hub device integrated in the memory module. In the memory system, each memory hub device in the memory module comprises a first memory device data interface that communicates with a first set of memory devices and a second memory device data interface that communicates with a second set of memory devices. In the memory system, the first set of memory devices which are separate from the second set of memory devices are communicated with by the memory hub device via the separate first and second memory device data interfaces.

Abstract: A method is provided for performing error correction operations in a memory module. A memory hub device, which is integrated in the memory module, receives an access request for accessing a set of memory devices of the memory module coupled to the memory hub device. Data is transferred between a link interface of the memory hub device and the set of memory devices. Error correction logic, which is integrated in the memory hub device, performs one or more error correction operations on the data transferred between the link interface and the set of memory devices. The memory hub device transmits and receives data, via a memory channel between an external memory controller and the link interface, without any error correction code, thereby reducing an amount of bandwidth used on the memory channel.

Abstract: A memory system is provided that enhances the memory bandwidth available through a memory module. The memory system includes a memory controller and a memory module coupled to the memory controller. In the memory system, the memory controller is coupled to the memory module via at least two independent memory channels. In the memory system, the at least two independent memory channels are coupled to one or more memory hub devices of the memory module.

Abstract: A method, computer program product and system for switching a defective signal line with a spare signal line without shutting down the computer system. A service processor monitors error correction code (ECC) check units configured to detect an error in a signal line. If an ECC check unit detects an error rate that exceeds a threshold, then the signal line with such an error rate may be said to be “defective.” The service processor configures switch control units in the driver/receiver pair associated with the defective signal line to be able to switch the defective signal line with a spare line upon receipt of a command from a memory controller switch control unit. In this manner, the system is not deactivated in order to switch a defective signal line with a spare line thereby reducing the time that the processor cannot send information to the memory buffers.

Abstract: A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.

Abstract: A memory system with high availability is provided. The memory system includes multiple memory channels. Each memory channel includes at least one memory module with memory devices organized as partial ranks coupled to memory device bus segments. Each partial rank includes a subset of the memory devices accessible as a subchannel on a subset of the memory device bus segments. The memory system also includes a memory controller in communication with the multiple memory channels. The memory controller distributes an access request across the memory channels to access a full rank. The full rank includes at least two of the partial ranks on separate memory channels. Partial ranks on a common memory module can be concurrently accessed. The memory modules can use at least one checksum memory device as a dedicated checksum memory device or a shared checksum memory device between at least two of the concurrently accessible partial ranks.

Abstract: A mechanism is provided for using a cache that is embedded in a memory hub device to replace failed memory cells. A memory module comprises an integrated memory hub device. The memory hub device comprises an integrated memory device data interface that communicates with a set of memory devices coupled to the memory hub device and a cache integrated in the memory hub device. The memory hub device also comprises an integrated memory hub controller that controls the data that is read or written by the memory device data interface to the cache based on a determination whether one or more memory cells within the set of memory devices has failed.

Abstract: A packetized cascade memory system including a plurality of memory assemblies, a memory bus including multiple segments, a bus repeater module and a segment level sparing module. The bus repeater module is in communication with two or more of the memory assemblies via the memory bus. The segment level sparing module provides segment level sparing for the communication bus upon segment failure.