Abstract: A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

Abstract: A method and apparatus protect data stored in a device by storing data from the device on a backup system upon the device being connected to the backup system; detecting that the device has been lost or stolen; encrypting a set of data stored on the device that has not been stored on the backup system using an encryption key based on another set of data stored on the device and also stored on the backup system; and deleting the other set of data and encryption key from the device.

Abstract: The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs are fabricated is different from the layer structure in regions of the wafers where p-MOSFETs are fabricated. The structures are fabricated by first forming a damaged region with a surface of a Si-containing substrate by ion implanting of a light atom such as He. A strained SiGe alloy is then formed on the Si-containing substrate containing the damaged region. An annealing step is then employed to cause substantial relaxation of the strained SiGe alloy via a defect initiated strain relaxation. Next, a strained semiconductor cap such as strained Si is formed on the relaxed SiGe alloy.

Abstract: A method for designing a system on a target device utilizing field programmable gate arrays is disclosed. A design is synthesized for the system. Components in the design are mapped onto resources on the target device. Placement locations are determined for the components on the target device. Components to replicate are identified in response to criticality determined from the placement locations.

Abstract: A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate including a tensile-strained SiGe alloy layer located atop an insulating layer; and a strained Si layer atop the tensile-strained SiGe alloy layer. The present invention also provides a method of forming the tensile-strained SGOI substrate as well as the heterostructure described above. The method of the present invention decouples the preference for high strain in the strained Si layer and the Ge content in the underlying layer by providing a tensile-strained SiGe alloy layer directly atop on an insulating layer.

Abstract: A power efficient and reduced electromagnetic interference (EMI) emissions multi-transmitter system for unshielded twisted pair (UTP) data communication applications. For each transmitter, digital transmit data is converted to a current-mode differential signal analog waveform by a digital-to-analog converter (DAC). The output current from each DAC is used to generate the required transmit voltage on the respective UTP line. Timing circuitry staggers the time base of each transmitter to reduce the aggregate EMI emissions of the multi-transmitter system.

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field effect transistor having a gate conductor including a gate edge located on a surface of a Si-containing substrate; a first inner silicide having an edge that is substantially aligned to the gate edge of the at least one metal oxide semiconductor field effect transistor; and a second outer silicide located adjacent to the first inner silicide. In accordance with the present invention, the second outer silicide has second thickness is greater than the first thickness of the first inner silicide. Moreover, the second outer silicide has a resistivity that is lower than the resistivity of the first inner silicide.

Abstract: A method and apparatus for testing network performance are provided. In data provided by an application on a first host for transport or communication to an application associated with a second host according to a first data transport protocol is intercepted at the first host and wrapped or encapsulated in a test data packet formatted according to a second data transport protocol. The test data packet formatted according to the second data transport protocol includes, in addition to data comprising all or a portion of the original data packet, instrumentation information. The test data packet is then delivered to the second host, which unpacks the original data packet and the instrumentation information. A response packet containing instrumentation information may be sent from the second host to the first host to provide roundtrip performance metrics.

Abstract: A method for designing a system on a target device utilizing field programmable gate arrays (FPGAs) includes generating a first design for the system that includes a first netlist describing a first logical design, and placement and routing of the first logical design. A second design for the system is generated that includes a second netlist describing a second logical design. Changes made to the first design in the second design are identified. Placement is performed on the changes made to the first design on the second design.

Abstract: Tonal transformation of speech is provided. A tone applicable to a syllable of received speech is determined. A tonal contour applicable to said tone for a dialect of a listener is determined, and the syllable of received speech is altered to have said determined tonal contour. The altered speech may then be delivered to the listener.

Abstract: Techniques for optimizing the placement and synthesis of a circuit design on a programmable integrated circuit are provided. The performance of a circuit design is analyzed after it has been compiled with different values for selected input parameters. The input parameter values that produce the best results for an output metric are then chosen to synthesis and place the circuit design on the programmable integrated circuit. In one embodiment, the values of the output metrics are averaged for all test compiles that share the same input parameters, but different seeds. In another embodiment, the compile with the best output metrics, as determined by the user, are selected. These techniques allow a user to automatically trade off compile-time to get a better-optimized circuit.

Abstract: Tonal correction of speech is provided. Received speech is analyzed and compared to a table of commonly mispronounced phrases. These phrases are mapped to the phrase likely intended by the speaker. The phrase determines to be the phrase the user likely intended can be suggested to the user. If the user approves of the suggestion, tonal correction can be applied to the speech before that speech is delivered to a recipient.

Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.

Abstract: Speech recognition assisted autocompletion of textual composite words or characters (i.e. words or characters containing a number of components) is provided. In response to user input specifying a component of a word or character, a list of candidate words or characters is generated. The desired word or character can be selected, or the list of candidate words or characters can be narrowed, in response to the user speaking the desired word or character. As a result, entry of words or characters formed from a number of letters, strokes, or word shapes is facilitated by user input comprising a combination of a specification of a component of the desired word or character and speech corresponding to a pronunciation of the desired word or character.

Abstract: The automatic completion of composite characters is supported by the generation of lists of candidate words or characters. Such lists may be generated by specifying letters or word shapes that are required to be included in candidate words or characters, independent of the order in which a specified letter or word shape is traditionally added to the completed word or character. In a subtractive mode, a user may exclude words or characters that include one or more letters or word shapes specified by the user.

Abstract: Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

Abstract: A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. In the present invention, self-aligned isolation regions are provided to reduce the parasitic capacitance in the DGFET structure. Additionally, the present invention encapsulates the silicon-containing channel layer to enable the back-gate to be oxidized to a greater extent thereby reducing the parasitic capacitance of the structure even further.

Abstract: A communication system includes an integrated circuit (IC) die having an on-chip source termination. The on-chip source termination can be a non-precision resistor, such as an unsilicided poly resistor, or any other suitable termination. As compared to an off-chip source termination, the on-chip source termination can reduce voltage peaking and/or voltage overshoot in the IC die and/or at a load that is connected to the IC die. The IC die can further include a line driver to provide a source current. A bias generator can be included to provide a bias current to the line driver. The bias generator can include a first current source coupled to an off-chip resistor and a second current source coupled to an on-chip resistor. An output voltage of the IC die can be adjusted by manipulating a trim control of the off-chip resistor and/or a trim control of the on-chip resistor.

Abstract: Provided is a method and system for controlling current characteristics in a transceiver having a transmitter. The method includes identifying a phase control signal from an adjacent current cell preceding the particular current cell in time and logically ORing the phase control signal from the preceding cell with a phase control signal from the particular current cell.

Abstract: The invention includes methods of fabricating a bipolar transistor that adds a silicon germanium (SiGe) layer or a third insulator layer of, e.g., high pressure oxide (HIPOX), atop an emitter cap adjacent the intrinsic base prior to forming a link-up layer. This addition allows for removal of the link-up layer using wet etch chemistries to remove the excess SiGe or third insulator layer formed atop the emitter cap without using oxidation. In this case, an oxide section (formed by deposition of an oxide or segregation of the above-mentioned HIPOX layer) and nitride spacer can be used to form the emitter-base isolation. The invention results in lower thermal cycle, lower stress levels, and more control over the emitter cap layer thickness, which are drawbacks of the first embodiment. The invention also includes the resulting bipolar transistor structure.