Abstract: An integrated circuit (IC) chip includes a Universal Chiplet Interconnect express (UCIe) interface circuit for transferring UCIe signals. The UCIe interface circuit includes a mainband sub-interface for transferring mainband signals and a sideband sub-interface for transferring sideband signals along a first number of sideband signal paths. A bump interface includes a second number of sideband bumps, each of the sideband bumps for coupling to a signal link. The second number of sideband bumps is less than the first number of sideband signal paths. A converter circuit is disposed between the UCIe interface circuit and the bump interface. The converter circuit includes a receiver circuit to receive first sideband data from the sideband sub-interface. The receiver circuit includes local clock circuitry, oversampling circuitry, and majority detection circuitry to receive oversampled data and to resolve states of sideband data bits based on a majority voting process.

Abstract: Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a memory chiplet is disclosed. The memory chiplet includes a D2D interface of a first type for coupling to a host IC chip via multiple lanes. The D2D interface includes multiple unit interface modules, each of the multiple unit interface modules corresponding to a first set of signal path resources of a lowest granularity provided by the multiple lanes. A memory port includes a memory physical interface of a first memory type for accessing memory storage of the first memory type. The memory physical interface of the first memory type includes a second set of signal path resources corresponding to multiple memory channels of the first memory type. Mapping circuitry maps the second set of signal path resources to the first set of signal path resources in a manner that utilizes all of the first signal path resources for an integer number of the multiple unit interface modules.

Abstract: Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a multi-chip module (MCM) is disclosed. The MCM includes a package substrate and an integrated circuit (IC) processor chip disposed on the package substrate. The IC processor chip includes a data interface configured to support N channels. A scalable high bandwidth memory (HBM) is coupled to the IC processor chip. The scalable HBM includes a first HBM device disposed on the package substrate with a first primary data interface that supports a first set of N/2 data channels and a first data transfer rate. A second HBM device is disposed on the package substrate and supports a second set of N/2 data channels and a second data transfer rate. The first HBM device and the second HBM device are configured to collectively support the full N channels and an aggregate data rate that is a sum of the first data rate and the second data rate.

Abstract: A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust.

Abstract: A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust.

Abstract: A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust.

Abstract: A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust.

Abstract: A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: A circuit, such as a CDR circuit, includes a sampler to receive a data signal having a variable data bit-rate responsive to a clock signal in an embodiment of the present invention. A clock circuit is coupled to the sampler and generates the clock signal responsive to a selectable update rate and a selectable phase adjust step-size. In a second embodiment of the present invention, the clock circuit includes a Stall logic that is coupled to first, second and third stages and is capable to hold the phase adjust signal responsive to the first and second stage output signals. In a third embodiment of the present invention, an indicator detects the variable data bit-rate and a counter provides the selectable phase adjust step-size for the adjust signal. In a fourth embodiment of the present invention, the clock circuit includes the Stall logic, the indicator and the counter.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: This disclosure provides a nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage (selected in response to the bitline) is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about (20) nanoseconds, while a “rest period” between pulses typically is chosen to be on the order of about a hundred nanoseconds or greater (e.g., one microsecond). Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of (50) nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g.

Abstract: A high-temperature composite hose (100) allows for the carrying out of high temperature air, gases and liquids in a range of 600 to 2000° F. The hose remains flexible at such elevated temperatures and may be used in situations where solid or flexible metal hose was previously used. The hose construction preferably includes a spirally wound inner wire element (10) over which is applied multiple layers (21, 23, 17) preferably beginning with a layer of heat resistant textile or fabric (21) and ending with a cover layer (17) which serves to provide abrasion and other resistance to the composite hose. A 2nd outer wire element (16) is preferably applied which, in connection with the inner wire element 10, serves to sandwich or compress and hold the heat resistant and other hose layers (21, 23, 17) together.

Abstract: A circuit, such as a CDR circuit, includes a sampler to receive a data signal having a variable data bit-rate responsive to a clock signal in an embodiment of the present invention. A clock circuit is coupled to the sampler and generates the clock signal responsive to a selectable update rate and a selectable phase adjust step-size. In a second embodiment of the present invention, the clock circuit includes a Stall logic that is coupled to first, second and third stages and is capable to hold the phase adjust signal responsive to the first and second stage output signals. In a third embodiment of the present invention, an indicator detects the variable data bit-rate and a counter provides the selectable phase adjust step-size for the adjust signal. In a fourth embodiment of the present invention, the clock circuit includes the Stall logic, the indicator and the counter.

Abstract: A circuit, such as a CDR circuit, includes a sampler to receive a data signal having a variable data bit-rate responsive to a clock signal in an embodiment of the present invention. A clock circuit is coupled to the sampler and generates the clock signal responsive to a selectable update rate and a selectable phase adjust step-size. In a second embodiment of the present invention, the circuit includes a Stall logic that is coupled to first, second and third stages and is capable to hold the phase adjust signal responsive to the first and second stage output signals. In a third embodiment of the present invention, an indicator detects the variable data bit-rate and a counter provides the selectable phase adjust step-size for the adjust signal. In a fourth embodiment of the present invention, the circuit includes the Stall logic, the indicator and the counter.

Abstract: An integrated circuit device includes a transmitting means for transmitting transmit data to an external signal line and a storing means for storing a first value representative of a transmit phase adjustment that is used to adjust when the transmit data is transmitted by the transmitting means. The first value is determined based on information stored in a memory device external to the integrated circuit device.

Abstract: An integrated circuit device includes an output driver, a first register to store a value representative of a drive strength setting of the output driver, wherein the value is determined based on information stored in a supplemental memory device external to the integrated circuit memory device, and a transmitter circuit configurable to receive the value representative of a drive strength setting of the output driver. The output driver is configurable to output data synchronously with respect to an external clock signal.

Abstract: An integrated circuit device includes a transmitter circuit having an output driver to output data, and a register to store a value representative of an equalization co-efficient setting of the output driver. The value may be determined based on information stored in a supplemental memory device. The value is representative of an equalization co-efficient setting that compensates for signals present on an external signal line. The signals present on the external signal line comprise one selected from residual signals and cross coupled signals.

Abstract: An integrated circuit device is described. The integrated circuit device includes a transmitter circuit having an output driver to output data, and a register to store a value representative of an equalization co-efficient setting of the output driver. The value may be determined based on information stored in a supplemental memory device.

Abstract: A system includes a first bus, a master device coupled to the first bus, and one or more subsystems coupled to the first bus. A respective subsystem includes a second bus, one or more slave devices coupled to the second bus, a write buffer to receive incoming signals from the master device via the first bus and to transmit signals to the one or more slave devices via the second bus in response to the incoming signals, and a read buffer to receive outgoing signals from the one or more slave devices via the second bus and to transmit signals to the master device via the first bus in response to the outgoing signals.