Abstract: An apparatus includes a plurality of storage media mounted on a rotatable spindle. The apparatus also includes an actuator with at least one actuator arm configured to translate among the plurality of storage media and at least two heads supported on the at least one actuator arm. Each of the at least two heads is configured to communicate with the plurality of storage media.

Abstract: An example method includes providing at least two data storage areas in a memory, providing a first amount of over-provisioning for a first of the at least two data storage areas and a second amount of over-provisioning for a second of the at least two data storage areas, categorizing data based on a characteristic of the data, and storing the data in one of the at least two data storage areas based on the categorization.

Abstract: Systems and methods for limiting performance variation in a storage device are described. Storage devices receive work requests to perform one or more operations from other computing devices, such as a host computing device. Completing the work requests may take a response time. In some embodiments, if the response time of executing the work request exceeds a threshold, the storage device may assign additional computing resources to complete the work request.

Abstract: Various implementations of network devices disclosed herein provide a method routing a data packet in an optical domain, the data packet including a first component or header and second component or routing information, stripping the first component or header from the data packet using a silicon photonic component, processing the first component or header in an electrical domain, and communicating the data packet without the first component or header to an optical delay line.

Abstract: Method and apparatus for managing data in a semiconductor memory, such as but not limited to a three dimensional (3D) NAND flash memory array. In some embodiments, the memory has non-volatile memory cells arranged into addressable blocks. Each memory cell is configured to store multiple bits. A program/read control circuit programs data sets to and reads data sets from the memory cells in the addressable blocks to service a sequence of host access commands. The circuit concurrently performs background reads in conjunction with the servicing of the host access commands. The background reads result in the reading of a different data set from each of the addressable blocks over each of a succession of time intervals of selected duration. The background reads condition the memory cells prior to a first read operation associated with the host access commands.

Abstract: A representation of a sparse matrix is generated that includes a value array, a column array, a pointer array, and a row array. The value array includes the nonzero elements of the sparse matrix. The column array includes a column number where a value is located in the sparse matrix. Elements of the pointer array indicate indices of the value array that start a new row in the sparse matrix. Elements of the row array indicate rows that include nonzero or nonempty elements.

Abstract: Method and apparatus for managing data in a semiconductor memory, such as but not limited to a three dimensional (3D) NAND flash memory array. In some embodiments, the memory has non-volatile memory cells arranged into addressable blocks. Each memory cell is configured to store multiple bits. A program/read control circuit programs data sets to and reads data sets from the memory cells in the addressable blocks to service a sequence of host access commands. The circuit concurrently performs background reads in conjunction with the servicing of the host access commands. The background reads result in the reading of a different data set from each of the addressable blocks over each of a succession of time intervals of selected duration. The background reads condition the memory cells prior to a first read operation associated with the host access commands.

Abstract: Method and apparatus for managing data in a semiconductor memory, such as but not limited to a three dimensional (3D) NAND flash memory array. In some embodiments, the memory has non-volatile memory cells arranged into addressable blocks. Each memory cell is configured to store multiple bits. A program/read control circuit programs data sets to and reads data sets from the memory cells in the addressable blocks to service a sequence of host access commands. The circuit concurrently performs background reads in conjunction with the servicing of the host access commands. The background reads result in the reading of a different data set from each of the addressable blocks over each of a succession of time intervals of selected duration. The background reads condition the memory cells prior to a first read operation associated with the host access commands.

Abstract: Systems and methods for active power management are described. In one embodiment, the systems and methods include obtaining power dissipation metrics for a plurality of components under one or more operating scenarios, generating a reference dissipation model based on the power dissipation metrics of the plurality of components, and implementing the reference dissipation model in a storage system to make component scheduling decisions in relation to power management of the storage system. In some embodiments, the storage system includes any combination of a hard disk drive, a solid state drive, a hybrid drive, and a system of multiple storage drives.

Abstract: Systems and methods for reducing read latency by storing a redundant copy of data are described. In one embodiment, the systems and methods include identifying data assigned to be written to a page of a storage device, storing the data in a page of a first die of the storage device, and saving at least one codeword from the data to a page of a second die. In some embodiments, the first die is associated with a first channel of the storage device and the second die is associated with a second channel of the storage device.

Abstract: Systems and methods for limiting performance variation in a storage device are described. Storage devices receive work requests to perform one or more operations from other computing devices, such as a host computing device. Completing the work requests may take a response time. In some embodiments, if the response time of executing the work request exceeds a threshold, the storage device may assign additional computing resources to complete the work request.

Abstract: In general, this disclosure is directed to techniques for adjusting the timing of operations for a storage device. According to one aspect of the disclosure, a method includes receiving, with at least one device, a workload indicator. The method further includes adjusting, with the at least one device, an operation execution time for the storage device responsive to at least the workload indicator. In some examples, the workload indicator may include a host demand indicator. In additional examples, the workload indicator may include a resource utilization indicator. In further examples, the operation execution time may be one of a write operation execution time or a read operation execution time.

Abstract: First and second data representation are stored in first and second blocks of a non-volatile, solid-state memory. The first and second blocks share series-connected bit lines. The first and second blocks are selected and other blocks of the non-volatile, solid-state memory that share the bit lines are deselected. The bit lines are read to determine a combination of the first and second data representations. The combination may include a union or an intersection.

Abstract: An apparatus includes a controller capable of being coupled to a host interface and a memory device. The memory device includes two or more non-hierarchical, non-volatile memory units having different minimum addressable data unit sizes. The controller is configured to at least perform determining a workload indicator of a data object being stored in the memory device via the host interface. The controller selects one of the memory units in response to the workload indicator of the data object corresponding to the minimum addressable data unit size of the selected memory unit corresponding to the workload indicator. The data object is stored in the selected memory unit in response thereto.

Abstract: An example method includes providing at least two data storage areas in a memory, providing a first amount of over-provisioning for a first of the at least two data storage areas and a second amount of over-provisioning for a second of the at least two data storage areas, categorizing data based on a characteristic of the data, and storing the data in one of the at least two data storage areas based on the categorization.

Abstract: First and second data representation are stored in first and second blocks of a non-volatile, solid-state memory. The first and second blocks share series-connected bit lines. The first and second blocks are selected and other blocks of the non-volatile, solid-state memory that share the bit lines are deselected. The bit lines are read to determine a combination of the first and second data representations. The combination may include a union or an intersection.

Abstract: An example method includes providing at least two data storage areas in a memory, providing a first amount of over-provisioning for a first of the at least two data storage areas and a second amount of over-provisioning for a second of the at least two data storage areas, categorizing data based on a characteristic of the data, and storing the data in one of the at least two data storage areas based on the categorization.

Abstract: A plurality of addressable memory tiles each comprise one or more cross-point arrays. Each array comprises a plurality of non-volatile resistance-change memory cells. A controller is configured to couple to the array and to a host system. The controller is configured to perform receiving, from the host system, one or more data objects each having a size equal to a predetermined logical block size, and storing the one or more data objects in a corresponding integer number of one or more of the memory tiles.

Abstract: An apparatus includes a controller capable of being coupled to a host interface and a memory device. The memory device includes two or more non-hierarchical, non-volatile memory units having different minimum addressable data unit sizes. The controller is configured to at least perform determining a workload indicator of a data object being stored in the memory device via the host interface. The controller selects one of the memory units in response to the workload indicator of the data object corresponding to the minimum addressable data unit size of the selected memory unit corresponding to the workload indicator. The data object is stored in the selected memory unit in response thereto.

Abstract: A plurality of addressable memory tiles each comprise one or more cross-point arrays. Each array comprises a plurality of non-volatile resistance-change memory cells. A controller is configured to couple to the array and to a host system. The controller is configured to perform receiving, from the host system, one or more data objects each having a size equal to a predetermined logical block size, and storing the one or more data objects in a corresponding integer number of one or more of the memory tiles.