Abstract: An image sensor having pin photodiodes residing vertically atop underlying CMOS control circuitry. In the preferred technique, pin photodiodes fabricated in amorphous silicon are utilized.

Abstract: A pixel structure of an image sensor, the pixel structure for providing sensor signals in response to incident light is provided. The pixel structure includes light selective elements, the light selective elements having predetermined thicknesses to absorb only light having wavelengths corresponding to the visible region of the light spectrum.

Abstract: What is disclosed is an apparatus for reducing row reset noise in photodiode based complementary metal oxide (CMOS) sensors. The apparatus uses at least one reference pixel for each row of pixels in a sensor array. Also, a reset noise elimination unit is provided to adjust the values received from the pixels in a particular row by an adjustment value determined from the reset values received from the reference pixels. Additionally, a method of using the apparatus is disclosed. The method has a step of providing a first reset signal to a row of pixels including the reference pixels. The method also reads out a first set of values from this row after integration. The method continues with providing a second reset signal to the row and a second set of values is read from the row. An adjustment value is calculated from the difference of the values which are read out from the reference pixels.

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract: A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the lower device detects infrared radiation in one single detector. In some embodiments a plurality of pixels may be provided, only some of which contain both the first and second layers.

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract: A pixel structure of an image sensor, the pixel structure for providing sensor signals in response to incident light is provided. The pixel structure includes light selective elements, the light selective elements having predetermined thicknesses to absorb only light having wavelengths corresponding to the visible region of the light spectrum.

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract: Star polymers of soft segment forming monomers are useful in forming surgical devices. The star polymers can be encapped with isocyanate, mixed with a filler and/or cross-linked. The polymer compositions are useful, for example, as fiber coatings, surgical adhesives or bone putty, or tissue growth substrate.

Abstract: A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the lower device detects infrared radiation in one single detector. In some embodiments a plurality of pixels may be provided, only some of which contain both the first and second layers.

Abstract: What is disclosed is an apparatus for reducing row reset noise in photodiode based complementary metal oxide (CMOS) sensors. The apparatus uses at least one reference pixel for each row of pixels in a sensor array. Also, a reset noise elimination unit is provided to adjust the values received from the pixels in a particular row by an adjustment value determined from the reset values received from the reference pixels. Additionally, a method of using the apparatus is disclosed. The method has a step of providing a first reset signal to a row of pixels including the reference pixels. The method also reads out a first set of values from this row after integration. The method continues with providing a second reset signal to the row and a second set of values is read from the row. An adjustment value is calculated from the difference of the values which are read out from the reference pixels.

Abstract: A method of adjusting a portion of a dark frame in accordance with compensation values related to dark reference pixels of a picture frame to obtain an adjusted dark frame portion, and then subtracting the adjusted dark frame portion from a corresponding picture frame portion. The technique may be used to improve the accuracy of image sensors such as those used in digital cameras or video conferencing cameras by compensating for dark current noise. The technique may be applied to both CMOS image sensors and, in general, to any image sensors requiring dark frame subtraction. The techniques may also be used in conjunction with calibration of image sensors and imaging systems.

Abstract: Star polymers of soft segment forming monomers are useful in forming surgical devices. The star polymers can be endcapped with isocyanate, mixed with a filler and/or cross-linked. The polymer compositions are useful, for example, as fiber coatings, surgical adhesives or bone putty, or tissue growth substrate.