Abstract: An antenna assembly, comprising: an antenna; a dielectric enclosure surrounding the antenna; and a Faraday shield, disposed around the antenna, and arranged between the antenna and the dielectric enclosure, wherein the Faraday shield comprises a non-uniform opacity along an antenna axis of the antenna, wherein a first opacity of the Faraday shield at a first position along the antenna axis is greater than a second opacity of the Faraday shield at a second position along the antenna axis of the antenna.

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Abstract: A fastening assembly for fastening a beam blocker to an extraction plate, the fastening assembly including a mounting pin having a shaft portion, a base portion at a first end of the shaft portion, and a head portion at a second end of the shaft portion, a centering sleeve radially surrounding the shaft portion and axially abutting the base portion, the centering sleeve being radially compressible between the shaft portion and the extraction plate and between the shaft portion and the beam blocker, an annular spacer surrounding the centering sleeve and axially abutting the beam blocker, with the centering sleeve extending partially into the spacer, and a latching cap surrounding the shaft portion and axially abutting the spacer, with the shaft portion extending through a through hole of the latching cap, the through hole being smaller than the head portion in a direction perpendicular to an axis of mounting pin.

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

Abstract: An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.

Abstract: An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.

Abstract: An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.

Abstract: An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Abstract: A kit for providing stem, branch and foliage support for a planting. The kit includes a plurality of hoop shaped bodies, each exhibiting an open interior adapted to encircle and support the planting. A plurality of vertically elongated portions secured about a perimeter of each of said bodies and include upper and lower inter-engaging ends for stacking the bodies in vertically spaced apart and tiered defining fashion. A plurality of elongated ground engagement stakes each include a flattened and intermediate located planar surface adapted for embedding the stakes in combination with an upper located pair of finger graspable retrieval tabs adapted for retracting the stakes. Each of the stakes further include an upper end securing the lower inter-engaging ends of a lower most hoop shaped body.

Abstract: A substrate assembly may include an outer halo, the outer halo comprising a first material and defining a first aperture. The substrate assembly may also include a halo ring, comprising a second material and disposed at least partially within the first aperture. The halo ring may define a second aperture, concentrically positioned within the first aperture, wherein the halo ring is coupled to accommodate a substrate therein.

Abstract: A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Abstract: A kit for providing stem, branch and foliage support for a hydroponic planting, the kit being supported upon a rim of a bucket and including at least one hoop shaped component exhibiting an open interior. A basket is supported by the hook shaped component so that an apertured and depth extending portion of the basket extends downwardly past its open interior. A plurality of aggregate, along with a seedling, is placed within the basket aperture interior so that the same is immersed in a liquid filling an interior of the bucket. The hoop shaped components exhibit vertically extending and elongated tier defining portions arranged in perimeter defined fashion about the component. Each of the tier defining portions have upper and lower inter-engaging locations and allowing for stacking of any additional number of components in vertically spaced apart and tiered defining fashion.

Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.

Abstract: A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Abstract: A kit for providing stem, branch and foliage support for a planting. The kit includes a plurality of hoop shaped components, each exhibiting an open interior adapted to support and constrain therebetween the planting. The components each further exhibit a plurality of vertically extending and elongated tier defining portions arranged in perimeter defined fashion about the component, with an intermediate location of each of an individual plurality of said tier defining portions being integrated into each of the hoop components. Each of the elongated tier defining portions further has upper and lower inter-engaging locations and, upon supporting a lower-most hoop shaped component proximate a base of the planting, allowing for stacking of any additional number of said hoop shaped components in vertically spaced apart and tiered defining fashion.

Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.