Patents by Inventor Kevin M. Daniels

Kevin M. Daniels has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9006688
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: April 14, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin M. Daniels, Russell J. Low, Benjamin B. Riordon
  • Patent number: 9000446
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: April 7, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin B. Riordon, Kevin M. Daniels, William T. Weaver, Steven M. Anella
  • Patent number: 8937004
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: January 20, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Deepak A. Ramappa, Russell J. Low, Atul Gupta, Kevin M. Daniels
  • Patent number: 8900982
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: December 2, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin M. Daniels, Russell L. Low, Nicholas P. T. Bateman, Benjamin B. Riordon
  • Patent number: 8756021
    Abstract: A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: June 17, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kevin M. Daniels, Bon-Woong Koo, Richard M. White, James W. Blanchette
  • Publication number: 20140127394
    Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the arc chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction voltage applied to the arc chamber body is modulated between two voltages so as to clean both the extraction electrodes and the faceplate of the arc chamber body.
    Type: Application
    Filed: October 25, 2013
    Publication date: May 8, 2014
    Inventors: George M. Gammel, Brant S. Binns, Piotr R. Lubicki, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Publication number: 20130287964
    Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
    Type: Application
    Filed: April 26, 2012
    Publication date: October 31, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana B. Radovanov, Victor M. Benveniste, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Publication number: 20130214101
    Abstract: A bracket for gathering and retaining flexible conduits and including a superstructure having an upper frame and lower extending stem. A pedestal seating the stem so that the frame is supported thereupon, with an underside of the pedestal adhering to a location associated with an application to which the conduits are related and in order to prevent bending or kinking of the hoses.
    Type: Application
    Filed: February 19, 2013
    Publication date: August 22, 2013
    Inventor: Kevin M. Daniel
  • Patent number: 8461558
    Abstract: A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: June 11, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Patent number: 8461030
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: June 11, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Deepak A. Ramappa, Russell J. Low, Atul Gupta, Kevin M. Daniels
  • Publication number: 20130001440
    Abstract: A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
    Type: Application
    Filed: July 1, 2011
    Publication date: January 3, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Publication number: 20120101742
    Abstract: A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
    Type: Application
    Filed: October 26, 2010
    Publication date: April 26, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Russell J. Low, Kevin M. Daniels, Bon-Woong Koo, Richard M. White, James W. Blanchette
  • Publication number: 20120017938
    Abstract: To achieve cost efficiency, solar cells must be processed at a high throughput. Breakages, which may leave debris on the clamping surface of the platen, adversely affect this throughput. A plurality of embodiments are disclosed which may be used to remove debris from the clamping surface without breaking the vacuum condition within the processing station. In some embodiments, a brush is used to sweep the debris from the surface of the platen. In other embodiments, an adhesive material is used to collect the debris. In some embodiments, the automation equipment used to handle masks may also be used to handle the platen cleaning mechanisms. In still other embodiments, stream of gas or ion beams are used to clean debris from the clamping surface of the platen.
    Type: Application
    Filed: July 20, 2011
    Publication date: January 26, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: William T. Weaver, Kevin M. Daniels, Dale K. Stone, Russell J. Low, Benjamin B. Riordon, Jeffrey Blahnik
  • Publication number: 20110124186
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Application
    Filed: November 16, 2010
    Publication date: May 26, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Frank Sinclair, Deepak A. Ramappa, Russell Low, Atul Gupta, Kevin M. Daniels
  • Publication number: 20110089343
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise directing an ion beam comprising a plurality of ions along an ion beam path, from an ion source to the substrate; disposing at least a portion of a mask in the ion beam path, between the ion source and the substrate; and translating one of the substrate and the mask relative to other one of the substrate and the mask.
    Type: Application
    Filed: April 7, 2010
    Publication date: April 21, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin M. Daniels, Russell J. Low, Benjamin B. Riordon
  • Publication number: 20110092059
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Application
    Filed: April 7, 2010
    Publication date: April 21, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin M. Daniels, Russell J. Low, Nicholas P.T. Bateman, Benjamin B. Riordon
  • Publication number: 20110089342
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.
    Type: Application
    Filed: April 7, 2010
    Publication date: April 21, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin M. Daniels, Russell J. Low, Benjamin B. Riordon
  • Publication number: 20110027463
    Abstract: A workpiece handling system includes a process chamber configured to support a workpiece for ion implantation, a first mask stored outside the process chamber in a mask station, and a robot system configured to retrieve the first mask from the mask station, and position the first mask upstream of the workpiece so the workpiece receives a first selective implant through the first mask. A method includes storing a first mask outside a process chamber in a mask station, retrieving the first mask from the mask station, positioning the first mask upstream of a workpiece positioned in the process chamber for ion implantation, and performing a first selective implant through the first mask.
    Type: Application
    Filed: June 14, 2010
    Publication date: February 3, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin B. Riordon, Kevin M. Daniels, William T. Weaver, Charles T. Carlson
  • Publication number: 20100297782
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.
    Type: Application
    Filed: May 20, 2010
    Publication date: November 25, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin B. Riordon, Kevin M. Daniels, William T. Weaver, Steven M. Anella
  • Patent number: 7816239
    Abstract: Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may comprise disposing a mask upstream of the solar cell, the mask comprising a plurality of filaments spaced apart from one another to define at least one aperture; directing a ribbon ion beam of desired species toward the solar cell to ion implant a portion of the solar cell defined by the at least one aperture of the mask; and orienting the ribbon ion beam such that longer cross-section dimension of the ribbon beam is perpendicular to the aperture in one plane.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: October 19, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Julian G. Blake, Kevin M. Daniels