Patents by Inventor Kevin R. Shea
Kevin R. Shea has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130252398Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.Type: ApplicationFiled: May 29, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: Kevin R. Shea, Thomas M. Graettinger
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Publication number: 20130244426Abstract: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.Type: ApplicationFiled: May 8, 2013Publication date: September 19, 2013Inventor: Kevin R. Shea
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Patent number: 8470716Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.Type: GrantFiled: November 3, 2011Date of Patent: June 25, 2013Assignee: Micron Technology, Inc.Inventors: Kevin R. Shea, Thomas M. Graettinger
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Patent number: 8450164Abstract: A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Covering material is formed over an elevationally outer lateral interface of the conductive material within the trench and the insulative material of the circuitry area. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.Type: GrantFiled: February 22, 2010Date of Patent: May 28, 2013Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, Kevin R. Shea, Farrell Good
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Patent number: 8440525Abstract: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.Type: GrantFiled: April 30, 2012Date of Patent: May 14, 2013Assignee: Micron Technology, Inc.Inventor: Kevin R. Shea
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Publication number: 20130093050Abstract: A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.Type: ApplicationFiled: October 18, 2011Publication date: April 18, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Brett W. Busch, Mingtao Li, Jennifer Lequn Liu, Kevin R. Shea, Belford T. Coursey, Jonathan T. Doebler
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Publication number: 20130005111Abstract: Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.Type: ApplicationFiled: September 13, 2012Publication date: January 3, 2013Applicant: Micron Technology, Inc.Inventors: Mark Kiehlbauch, Kevin R. Shea
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Patent number: 8268695Abstract: Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.Type: GrantFiled: August 13, 2008Date of Patent: September 18, 2012Assignee: Micron Technology, Inc.Inventors: Mark Kiehlbauch, Kevin R. Shea
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Patent number: 8263457Abstract: A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.Type: GrantFiled: October 10, 2011Date of Patent: September 11, 2012Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, Kevin R. Shea
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Publication number: 20120214306Abstract: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.Type: ApplicationFiled: April 30, 2012Publication date: August 23, 2012Applicant: MICRON TECHNOLOGY, INC.Inventor: Kevin R. Shea
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Patent number: 8241987Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.Type: GrantFiled: May 17, 2011Date of Patent: August 14, 2012Assignee: Micron Technology, Inc.Inventors: Mark Kiehlbauch, Kevin R. Shea
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Patent number: 8129240Abstract: A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.Type: GrantFiled: August 16, 2010Date of Patent: March 6, 2012Assignee: Micron Technology, Inc.Inventors: Vishwanath Bhat, Kevin R. Shea
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Publication number: 20120052650Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.Type: ApplicationFiled: November 3, 2011Publication date: March 1, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Kevin R. Shea, Thomas M. Graettinger
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Patent number: 8124545Abstract: The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10?6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.Type: GrantFiled: May 11, 2010Date of Patent: February 28, 2012Assignee: Micron Technology, Inc.Inventors: Niraj B. Rana, Kevin R. Shea, Janos Fucsko
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Publication number: 20120043596Abstract: Semiconductor device structures include an at least partially formed container capacitor having a generally cylindrical first conductive member with at least one inner sidewall surface, a lattice material at least partially laterally surrounding an upper end portion of the first conductive member, an anchor material, and at least one aperture extending through the lattice material between the at least partially formed container capacitor and an adjacent at least partially formed container capacitor. Other structures include an at least partially formed container capacitor, a lattice material, and an anchor material disposed over a surface of the lattice material and at least a portion of an end surface of the first conductive member and forming a chemical barrier over at least a portion of an interface between the lattice material and the upper end portion of the first conductive member.Type: ApplicationFiled: November 1, 2011Publication date: February 23, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Brett Busch, Kevin R. Shea, Thomas A. Figura
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Patent number: 8119537Abstract: A method is provided for selectively etching native oxides or other contaminants to metal nitrides and metal oxides during manufacture of a semiconductor device. The method utilizes a substantially non-aqueous etchant which includes a source of fluorine ions. In a preferred embodiment, the etchant comprises H2SO4 and HF. The etchant selectively etches native and doped oxides or other contaminants without excessively etching metal nitrides or metal oxides on the substrate or on adjacent exposed surfaces.Type: GrantFiled: June 17, 2005Date of Patent: February 21, 2012Assignee: Micron Technology, Inc.Inventors: Kevin R. Shea, Kevin J. Torek
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Publication number: 20120034753Abstract: A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.Type: ApplicationFiled: October 10, 2011Publication date: February 9, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishwanath Bhat, Kevin R. Shea
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Patent number: 8076248Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.Type: GrantFiled: January 6, 2010Date of Patent: December 13, 2011Assignee: Micron Technology, Inc.Inventors: Kevin R. Shea, Thomas M. Graettinger
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Patent number: 8058126Abstract: Methods of forming semiconductor devices that include one or more container capacitors include anchoring an end of a conductive member to a surrounding lattice material using an anchor material, which may be a dielectric. The anchor material may extend over at least a portion of an end surface of the conductive member, at least a portion of the lattice material, and an interface between the conductive member and the lattice material. In some embodiments, the anchor material may be formed without significantly covering an inner sidewall surface of the conductive member. Furthermore, in some embodiments, a barrier material may be provided over at least a portion of the anchor material and over at least a portion of an inner sidewall surface of the conductive member. Novel semiconductor devices and structures are fabricated using such methods.Type: GrantFiled: February 4, 2009Date of Patent: November 15, 2011Assignee: Micron Technology, Inc.Inventors: Brett Busch, Kevin R. Shea, Thomas A. Figura
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Publication number: 20110214266Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location.Type: ApplicationFiled: May 17, 2011Publication date: September 8, 2011Applicant: MICRON TECHNOLOGY, INC.Inventors: Mark Kiehlbauch, Kevin R. Shea