Abstract: A method comprises inputting a treatment planning image of a target subject into a machine learning system. The method further comprises determining, by the machine learning system, a first target-subject-specific model of the treatment planning image. The method further comprises applying, by a processing device, the first target-subject-specific model to the treatment planning image to generate a transformed treatment planning image corresponding to a first position of a plurality of positions of the target subject. The method further comprises comparing the transformed treatment planning image to a reference image. The method further comprises, based on the comparing, modifying one or more parameters of the first target-subject-specific model to generate a second target-subject-specific model corresponding to a second position of the plurality of positions.

Abstract: Methods, apparatuses, and systems related to depositing a storage node material are described. An example method includes forming a semiconductor structure including a support structure having a first silicate material over a bottom nitride material, a first nitride material over the first silicate material, a second silicate material over the first nitride material, and a second nitride material over the second silicate material. The method further includes removing portions of the second nitride material. The method further includes depositing a third silicate material over the second nitride material and a portion of the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing a storage node material within the opening.

Abstract: The natural product neurolenin D is isolated from Neurolaena lobata using continuous extraction, stirring over charcoal, flash column chromatography, and recrystallization. The secondary alcohol in this molecule is converted into a methane sulfonyl ester (mesylate) to generate a new molecule, neurolenin D mesylate. This previously unknown molecule has been tested for biological activity in assays for human toxicity, mutagenicity, and nematocidal potency. It is not toxic or mutagenic and demonstrates the ability to kill nematodes responsible for the neglected tropical disease lymphatic filariasis and is likely to have the same ability to kill other nematodes responsible for a wide range of diseases in humans, animals and plants. Additional esters of neurolenin D are claimed and procedures are outlined for their synthesis.

Abstract: Aircraft, enhanced flight vision systems, and methods for displaying an approaching runway area are provided. In one example, an aircraft includes a display disposed in a cockpit area. A radar imaging and post-processing arrangement is in communication with the display via a processor. The radar imaging and post-processing arrangement is operative to generate a radar image of an approaching runway area, generate a symbology corresponding to the approaching runway area and/or compare the radar image to a synthetic vision (SV) database to align an SV runway area with the radar image to define an aligned SV runway area, and to communicate the symbology and/or the aligned SV runway area to the display.

Abstract: Systems and methods for managing an electrical load of a power strip. The systems include a power strip including an electrical connector connected to an AC power supply, outlet sockets electrically coupled to the electrical connector, a conductive path between the electrical connector and the electrical outlet sockets, an indicator, and a current monitoring circuit. The current monitoring circuit is electrically coupled to the conductive path and measures total current flowing in the conductive path, determines whether the total current is within a predetermined amount of current from a current rating of the power strip, and causes the indicator to indicate when the total current is within a predetermined amount of current from the current rating.

Abstract: A fiber termination assembly includes an optical fiber inserted into an optical ferrule disposed in an optical passageway of a heat conductive housing, the optical passageway providing an optical path aligned with the openings of the housing, the optical ferrule including a central bore concentrically disposed about the optical path and configured to receive a portion of a proximal end of the optical fiber therein, the optical ferrule and optical fiber secured in relation to the heat conductive housing with epoxy at a distal end of the optical ferrule, wherein the optical ferrule is transparent at a predetermined wavelength of light such that for light coupled into an input surface of the proximal end of the optical fiber at least a portion of the light propagating as cladding modes is stripped out of the optical fiber and transported to and dissipated in the heat conductive housing.

Abstract: A fiber termination assembly includes an optical fiber inserted into an optical ferrule disposed in an optical passageway of a heat conductive housing, the optical passageway providing an optical path aligned with the openings of the housing, the optical ferrule including a central bore concentrically disposed about the optical path and configured to receive a portion of a proximal end of the optical fiber therein, the optical ferrule and optical fiber secured in relation to the heat conductive housing with epoxy at a distal end of the optical ferrule, wherein the optical ferrule is transparent at a predetermined wavelength of light such that for light coupled into an input surface of the proximal end of the optical fiber at least a portion of the light propagating as cladding modes is stripped out of the optical fiber and transported to and dissipated in the heat conductive housing.

Abstract: A fiber termination assembly includes an optical fiber inserted into an optical ferrule disposed in an optical passageway of a heat conductive housing, the optical passageway providing an optical path aligned with the openings of the housing, the optical ferrule including a central bore concentrically disposed about the optical path and configured to receive a portion of a proximal end of the optical fiber therein, the optical ferrule and optical fiber secured in relation to the heat conductive housing with epoxy at a distal end of the optical ferrule, wherein the optical ferrule is transparent at a predetermined wavelength of light such that for light coupled into an input surface of the proximal end of the optical fiber at least a portion of the light propagating as cladding modes is stripped out of the optical fiber and transported to and dissipated in the heat conductive housing.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location.

Abstract: Embodiments of the invention provide a buoyant plant habitat for removing excess nutrients and other pollutants from a body of water and thereby remediating the water. The buoyant plant habitat may be used to remediate any suitable body of water, including ponds and lakes (both natural and manmade), streams and rivers, and stormwater, wastewater or drainage ponds. The buoyant plant habitat comprises a rigid, non-biodegradable grid structure into which a plurality of aquatic plants is placed. As the plants grow, they take up excess nutrients (nitrogen and phosphorous) and other pollutants from the water. From time to time, the top portions of the plants are removed by cutting. This cutting of the permanently removes the excess nutrients that have been taken up and stored by the cut portion of the plants. The cut plant matter may then be composted or otherwise disposed of.

Abstract: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

Abstract: An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

Abstract: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

Abstract: A laminated wafer sensor structure includes a housing layer having pocket openings formed therein, a circuit layer having a sensor element and electronic components mounted for registration with the pocket openings in the housing layer, and a rigid back layer. The laminated structure is suitable for handling by conventional robotic wafer handling systems. The wafer sensor structure is adapted for electrical connection to a base station that is also adapted for connection to a host computer system to facilitate communication among the sensor structure, the base station and the host computer.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location.