Abstract: Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode comprising titanium nitride (TiN) and hemispherical grained (HSG) silicon. The container housing the capacitor is filled with photoresist and then planarized. The TiN layer is then selectively recessed with a peroxide mixture and subsequently the HSG silicon layer is recessed using tetramethyl ammoniumhydroxide. Thus, the bottom electrode is recessed below the level of particles which may overlie the memory cell capacitors and cause shorts by contacting the bottom electrode.

Abstract: Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCI, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

Abstract: In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the first memory container and the collar material along a corner of a third memory container.

Abstract: An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

Abstract: In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.

Abstract: A surface treatment process includes rinsing a substrate after a dry development process to remove residual resist material prior to patterning a hard mask layer. An amorphous carbon hard mask is dry developed and thereafter, the surface treatment includes an aqueous ammonium hydroxide and hydrogen peroxide composition. While the composition acts as a solvent to the resist, the composition is selective to the amorphous carbon hard mask and the surface under the hard mask.

Abstract: Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode comprising titanium nitride (TiN) and hemispherical grained (HSG) silicon. The container housing the capacitor is filled with photoresist and then planarized. The TiN layer is then selectively recessed with a peroxide mixture and subsequently the HSG silicon layer is recessed using tetramethyl ammoniumhydroxide. Thus, the bottom electrode is recessed below the level of particles which may overlie the memory cell capacitors and cause shorts by contacting the bottom electrode.

Abstract: A method of dispensing a strip product using a strip fabrication assembly, by entering arm positions for guide arms of the assembly into a guide arm controller device, moving the corresponding guide arms of the strip fabrication assembly to the respective arm positions using the guide arm controller device, and feeding different strip materials through the assembly using the guide arms, after moving them to the entered arm positions. The guide arms are coupled to threaded rods, and are moved by actuating servo motors which are coupled to the threaded rods. The guide arm controller device may include a programmable logic controller, which has been programmed to control the servo motors in response to entry of guide arm positions.

Abstract: A method of tracking the movement of data between data centers through different types of domains is disclosed. Network topologies are dynamically determined and objects corresponding to elements in the domains (entity objects) are stored in a Topology Object Model. The details of the elements stored include both physical and logical connections to other elements in the domain. Elements are cross-referenced with other elements using entity objects associated with the elements. A change in the status of an element is recorded in the corresponding entity object and in the entity objects of the cross-referenced elements. The information contained in the Topology Object Model is graphically presented to a user by displaying depictions of the physical or logical connections and datapaths used in data movement across the multiple domains.

Abstract: A method of dispensing a strip product using a strip fabrication assembly, by entering arm positions for guide arms of the assembly into a guide arm controller device, moving the corresponding guide arms of the strip fabrication assembly to the respective arm positions using the guide arm controller device, and feeding different strip materials through the assembly using the guide arms, after moving them to the entered arm positions. The guide arms are coupled to threaded rods, and are moved by actuating servo motors which are coupled to the threaded rods. The guide arm controller device may include a programmable logic controller, which has been programmed to control the servo motors in response to entry of guide arm positions.

Abstract: A method of dispensing a strip product using a strip fabrication assembly, by entering arm positions for guide arms of the assembly into a guide arm controller device, moving the corresponding guide arms of the strip fabrication assembly to the respective arm positions using the guide arm controller device, and feeding different strip materials through the assembly using the guide arms, after moving them to the entered arm positions. The guide arms are coupled to threaded rods, and are moved by actuating servo motors which are coupled to the threaded rods. The guide arm controller device may include a programmable logic controller, which has been programmed to control the servo motors in response to entry of guide arm positions.

Abstract: A deep friction orthosis enhancing the effectiveness of the human hand in the application of deep friction massage therapy. The orthosis includes a partial enclosure having a finger support proportioned to rigidly engage the finger(s); and at least a wrist support integral with the finger(s) support, proportioned to rigidly engage support and direct at least one finger of the hand of the user in a direction having utility in the practice of deep friction massage. The finger support means includes sufficient opening for at least the tip of the supported finger to touch the treated patient's skin.