Abstract: An integrated circuit includes a memory array and an error correction code (ECC) circuit configured to provide a first signal indicating whether data read from the memory array has been corrected by the ECC circuit. The integrated circuit includes a mimic circuit configured to provide a second signal indicating whether the first signal is valid and a counter configured to increment in response to the second signal indicating the first signal is valid and the first signal indicating an error.

Abstract: An integrated circuit including an array of memory cells, a circuit, volatile storage, and non-volatile storage. The circuit is configured to detect defective memory cells in the array of memory cells and provide addresses of the defective memory cells. The volatile storage is configured to store the addresses, where each entry in the volatile storage includes one of the addresses and a volatile storage master bit. The non-volatile storage is configured to store the addresses, where each entry in the non-volatile storage includes one of the addresses and a non-volatile storage master bit.

Abstract: An integrated circuit includes an array of memory cells, a clock generator configured to generate a clock signal, and a control circuit configured to perform a retention test on the array of memory cells based on the clock signal. A period of the clock signal defines a retention period for the retention test.

Abstract: An integrated circuit including an array of memory cells, volatile storage, non-volatile storage and a circuit. The circuit is configured to sense first addresses of first defective memory cells from the non-volatile storage to obtain sense first addresses. The circuit detects second defective memory cells via the sense first addresses and stores second addresses of the second defective memory cells in the volatile storage and in the non-volatile storage.

Abstract: An integrated circuit includes an array of memory cells, a clock generator configured to generate a clock signal, and a control circuit configured to perform a retention test on the array of memory cells based on the clock signal. A period of the clock signal defines a retention period for the retention test.

Abstract: An integrated circuit including an array of memory cells, volatile storage, non-volatile storage and a circuit. The circuit is configured to sense first addresses of first defective memory cells from the non-volatile storage to obtain sense first addresses. The circuit detects second defective memory cells via the sense first addresses and stores second addresses of the second defective memory cells in the volatile storage and in the non-volatile storage.

Abstract: An integrated circuit including an array of memory cells, a circuit, volatile storage, and non-volatile storage. The circuit is configured to detect defective memory cells in the array of memory cells and provide addresses of the defective memory cells. The volatile storage is configured to store the addresses, where each entry in the volatile storage includes one of the addresses and a volatile storage master bit. The non-volatile storage is configured to store the addresses, where each entry in the non-volatile storage includes one of the addresses and a non-volatile storage master bit.

Abstract: An integrated circuit includes a memory array and an error correction code (ECC) circuit configured to provide a first signal indicating whether data read from the memory array has been corrected by the ECC circuit. The integrated circuit includes a mimic circuit configured to provide a second signal indicating whether the first signal is valid and a counter configured to increment in response to the second signal indicating the first signal is valid and the first signal indicating an error.

Abstract: Methods and apparatus for increasing front-end testing throughput by allowing simultaneous access to multiple banks are provided. Techniques described herein take advantage of the reduced number of data lines required for transmitting compressed test data. Data lines effectively freed up due to compression of test data read from one bank may be used to carry test data for another bank.

Abstract: Methods and apparatus for increasing front-end testing throughput by allowing simultaneous access to multiple banks are provided. Techniques described herein take advantage of the reduced number of data lines required for transmitting compressed test data. Data lines effectively freed up due to compression of test data read from one bank may be used to carry test data for another bank.

Abstract: Embodiments of the invention provide a method and apparatus for detecting illegal commands. In one embodiment, the method includes receiving one or more first commands and recording a history of the received one or more first commands. The method also includes receiving one or more second commands at a command decoder and determining if the one or more second commands are illegal commands, wherein the history of the one or more received first commands is used to determine if the one or more second commands are illegal commands. If the one or more second commands are illegal commands, the command decoder is prevented from decoding and issuing decoded one or more second commands corresponding to the received one or more second commands.

Abstract: Methods and apparatus for increasing front-end testing throughput by allowing simultaneous access to multiple banks are provided. Techniques described herein take advantage of the reduced number of data lines required for transmitting compressed test data. Data lines effectively freed up due to compression of test data read from one bank may be used to carry test data for another bank.

Abstract: Methods and apparatus that may be used to increase back-end testing throughput by allowing simultaneous access to multiple banks are provided. Techniques described herein take advantage of the compression that may be achieved in back-end testing, particularly when only an indication of whether a device has passed or failed is required and no indication of a particular location of a failure is necessary.

Abstract: Techniques and circuitry for transferring data from memory arrays of a memory device to output pins via a FIFO structure are provided. Input and output stages of the FIFO structure may be operated independently, allowing data to be loaded into the FIFO structure at a first frequency and unloaded from the FIFO structure at a second frequency.

Abstract: A method of controlling an internal address counter which provides a count used in accessing a storage cell array to provide increased flexibility in the performance of a test on the array, comprising, rendering a normal overflow condition of the counter modified, thereby enabling alteration of the count provided by the counter in accordance with the requirements of the test being performed on the array.

Abstract: Techniques and circuitry for transferring data from memory arrays of a memory device to output pins via a FIFO structure are provided. Input and output stages of the FIFO structure may be operated independently, allowing data to be loaded into the FIFO structure at a first frequency and unloaded from the FIFO structure at a second frequency.

Abstract: Methods and apparatus for internally generating addresses for use in accessing elements of an integrated circuit (IC) device are provided. In response to detecting a current command, an internal address for use in executing a subsequent command may be generated. By generating the address ahead of time, before the next command is issued, the address may be generated in sufficient time to satisfy corresponding setup and hold timing requirements.

Abstract: A memory circuit comprises a memory and an internal column counter for a read sequence in a compression test mode of the memory. The memory comprises an array of memory cells. The internal column counter is configured to provide a first column address for generating a compression register of expected data to compare to data read from the array of memory cells in response to a first read command, latch a second column address in response to a second read command while the first read command is executing, and provide the second column address for generating the compression register of expected data to compare to data read from the array of memory cells in response to the second read command once execution of the first read command is completed.

Abstract: Techniques and circuitry that support switching operations required to exchange data between memory arrays and external data pads are provided. In a write path, such switching operations may include latching in and assembling a number of bits sequentially received over a single data pad, reordering those bits based on a type of access mode (e.g., interleaved or sequential), and performing scrambling operations based on chip organization (e.g., ×4, ×8, or ×16) a bank location being accessed. Similar operations may be performed (in reverse order) in a read path, to assemble data to be read out of a device.

Abstract: Techniques and circuitry that support switching operations required to exchange data between memory arrays and external data pads are provided. In a write path, such switching operations may include latching in and assembling a number of bits sequentially received over a single data pad, reordering those bits based on a type of access mode (e.g., interleaved or sequential), and performing scrambling operations based on chip organization (e.g., x4, x8, or x16) a bank location being accessed. Similar operations may be performed (in reverse order) in a read path, to assemble data to be read out of a device.