Patents by Inventor Khaled Hasnat
Khaled Hasnat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190369887Abstract: Memory devices might be configured to perform methods including reading a first page of memory cells and flag data wherein the flag data indicates whether a second page of memory cells adjacent to the first page is programmed, and determining from the flag data whether to re-read the first page of memory cells with an adjusted read voltage; performing a sense operation on memory cells coupled to first data lines of a first array of memory cells and memory cells coupled to data lines of a second array of memory cells, and determining a program indication of memory cells coupled to second data lines from the sense operation performed on the memory cells coupled to the data lines of the second array of memory cells; and/or programming memory cells coupled to first data lines in a first array of memory cells, and programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in a second array of memory cells with flag data indicative oType: ApplicationFiled: August 19, 2019Publication date: December 5, 2019Applicant: MICRON TECHNOLOGY, INC.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Publication number: 20190279715Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.Type: ApplicationFiled: December 31, 2018Publication date: September 12, 2019Inventors: Akira Goda, Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat
-
Patent number: 10409506Abstract: Methods for programming sense flags may include programming memory cells coupled to first data lines in a main memory array, and programming memory cells coupled to second data lines in the main memory array while programming memory cells coupled to data lines in a flag memory array with flag data indicative of the memory cells coupled to the second data lines being programmed. Methods for sensing flags may include performing a sense operation on memory cells coupled to first data lines of a main memory array and memory cells coupled to data lines of a flag memory array, and determining a program indication of memory cells coupled to second data lines of the main memory array from the sense operation performed on the memory cells coupled to the data lines of the flag memory array.Type: GrantFiled: August 30, 2018Date of Patent: September 10, 2019Assignee: Micron Technology, Inc.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Publication number: 20190043873Abstract: Embodiments of the present disclosure are directed towards a memory device with vertical string drivers, in accordance with some embodiments. In one embodiment, the memory device includes a plurality of wordlines formed in a stack of multiple tiers. The device further includes a semiconductor layer disposed on top of the plurality of wordlines. The device further includes a plurality of string drivers disposed in the semiconductor layer substantially perpendicular to the tier stack of the plurality of wordlines. The semiconductor layer provides respective gate connections for the plurality of string drivers. In some embodiments, the semiconductor layer may be fabricated of polysilicon. Other embodiments may be described and/or claimed.Type: ApplicationFiled: September 5, 2018Publication date: February 7, 2019Inventors: Khaled Hasnat, Prashant Majhi, Deepak Thimmegowda
-
Publication number: 20190043882Abstract: Embodiments of the present disclosure are directed towards techniques to provide a memory device with reduced capacitance. In one embodiment, a memory array is formed in a die, and includes one or more pillars and a plurality of wordlines coupled with the one or more pillars. Adjacent wordlines of the plurality of wordlines are separated by respective dielectric layers, which may include components, to reduce capacitance of the plurality of wordlines. The components comprise air gaps or low-k dielectric material. Other embodiments may be described and/or claimed.Type: ApplicationFiled: June 28, 2018Publication date: February 7, 2019Inventors: Khaled Hasnat, Prashant Majhi, Krishna Parat
-
Publication number: 20190043874Abstract: The present disclosure relates to providing a wordline bridge between wordlines of adjacent tiles of memory cells to reduce the number wordline staircases in 3D memory arrays. An apparatus may include a memory array having memory cells. The memory array includes a first block of pages of the memory cells in a first tile and a second block of pages of the memory cells in a second tile. The apparatus may also include a polysilicon wordline bridge that couples first wordlines of the first block to second wordlines of the second block to couple the first tile to the second tile. The wordline bridge may be formed by applying a hard mask over the first tile, the second tile, and over a portion of polysilicon that connects the first tile to the second tile.Type: ApplicationFiled: November 30, 2017Publication date: February 7, 2019Applicant: Intel CorporationInventors: Deepak Thimmegowda, Owen W. Jungroth, David S. Meyaard, Khaled Hasnat
-
Publication number: 20190043868Abstract: Three-dimensional (3D) memory with control the array and control circuitry in separately processed and bonded wafers is described. In one example, a non-volatile storage component includes a first die including a three-dimensional (3D) array of non-volatile storage cells and a second die bonded with the first die. The second die includes CMOS (complementary metal oxide semiconductor) circuitry to access the 3D array of non-volatile storage cells. By processing the CMOS circuitry and array on separate wafers, the periphery CMOS and interconnects do not have to withstand the thermal cycles involved in processing the memory array, which enables optimizations for the CMOS transistors and the use low resistive material for interconnects.Type: ApplicationFiled: June 18, 2018Publication date: February 7, 2019Inventors: Khaled HASNAT, Prashant MAJHI
-
Publication number: 20190043836Abstract: Wafer-to-wafer bonding is used to form three-dimensional (3D) memory components such as 3D NAND flash memory with shared control circuitry on one die to access arrays on multiple dies. In one example, a non-volatile storage device includes a first die including a 3D array of non-volatile storage cells and CMOS (complementary metal oxide semiconductor) circuitry. A second die including a second 3D array of non-volatile storage cells is vertically stacked and bonded with the first die. At least a portion of the CMOS circuitry of the first die to access both the first 3D array of non-volatile storage cells of the first die and the second 3D array of non-volatile storage cells of the second die.Type: ApplicationFiled: June 18, 2018Publication date: February 7, 2019Inventors: Richard FASTOW, Khaled HASNAT, Prashant MAJHI, Owen JUNGROTH
-
Patent number: 10170189Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.Type: GrantFiled: September 29, 2017Date of Patent: January 1, 2019Assignee: Micron Technology, Inc.Inventors: Akira Goda, Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat
-
Publication number: 20180373451Abstract: Methods for programming sense flags may include programming memory cells coupled to first data lines in a main memory array, and programming memory cells coupled to second data lines in the main memory array while programming memory cells coupled to data lines in a flag memory array with flag data indicative of the memory cells coupled to the second data lines being programmed. Methods for sensing flags may include performing a sense operation on memory cells coupled to first data lines of a main memory array and memory cells coupled to data lines of a flag memory array, and determining a program indication of memory cells coupled to second data lines of the main memory array from the sense operation performed on the memory cells coupled to the data lines of the flag memory array.Type: ApplicationFiled: August 30, 2018Publication date: December 27, 2018Applicant: MICRON TECHNOLOGY, INC.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Patent number: 10126967Abstract: In a memory device, odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. Even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.Type: GrantFiled: November 3, 2016Date of Patent: November 13, 2018Assignee: Micron Technology, Inc.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Publication number: 20180122481Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.Type: ApplicationFiled: September 29, 2017Publication date: May 3, 2018Inventors: Akira Goda, Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat
-
Patent number: 9779816Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.Type: GrantFiled: May 26, 2016Date of Patent: October 3, 2017Assignee: Micron Technology, Inc.Inventors: Akira Goda, Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat
-
Publication number: 20170075613Abstract: In a memory device, odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. Even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.Type: ApplicationFiled: November 3, 2016Publication date: March 16, 2017Applicant: MICRON TECHNOLOGY, INC.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Patent number: 9519582Abstract: Memory devices, methods for programming sense flags, methods for sensing flags, and memory systems are disclosed. In one such memory device, the odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. The even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.Type: GrantFiled: August 24, 2015Date of Patent: December 13, 2016Assignee: Micron Technology, Inc.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Publication number: 20160343438Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.Type: ApplicationFiled: May 26, 2016Publication date: November 24, 2016Inventors: Akira Goda, Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat
-
Patent number: 9378839Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.Type: GrantFiled: August 4, 2014Date of Patent: June 28, 2016Assignee: Micron Technology, Inc.Inventors: Akira Goda, Shafqat Ahmed, Khaled Hasnat, Krishna K. Parat
-
Patent number: 9219070Abstract: A 3-D memory array comprises a plurality of elevationally extending strings of memory cells. An array of select devices is elevationally over and individually coupling with individual of the strings. The select devices individually comprise a channel, gate dielectric proximate the channel, and gate material proximate the gate dielectric. The individual channels are spaced from one another. The gate material comprises a plurality of gate lines running along columns of the spaced channels elevationally over the strings. Dielectric material is laterally between immediately adjacent of the gate lines. The dielectric material and the gate lines have longitudinally non-linear edges at an interface relative one another. Additional embodiments are disclosed.Type: GrantFiled: February 5, 2013Date of Patent: December 22, 2015Assignee: Micron Technology, Inc.Inventors: Deepak Thimmegowda, Brian Cleereman, Khaled Hasnat
-
Publication number: 20150363313Abstract: Memory devices, methods for programming sense flags, methods for sensing flags, and memory systems are disclosed. In one such memory device, the odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. The even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.Type: ApplicationFiled: August 24, 2015Publication date: December 17, 2015Applicant: MICRON TECHNOLOGY, INC.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler
-
Patent number: 9135998Abstract: Memory devices, methods for programming sense flags, methods for sensing flags, and memory systems are disclosed. In one such memory device, the odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. The even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.Type: GrantFiled: November 9, 2010Date of Patent: September 15, 2015Assignee: Micron Technology, Inc.Inventors: Shafqat Ahmed, Khaled Hasnat, Pranav Kalavade, Krishna Parat, Aaron Yip, Mark A. Helm, Andrew Bicksler