Abstract: A hybrid tuning circuit is used consisting of a digital finite state machine and an analog tuning circuit to effectively keep the RC product of the continuous time integrator constant across process, temperature, supply, and sampling rate variations. Since the implementation is continuous, the tracking is more accurate than traditional techniques. Using a carefully chosen clocking scheme, the technique gets rid of inter-symbol interference in the feedback DAC. The technique does not use a reference frequency, thereby eliminating the need for a user to identify a reference frequency.

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth between etching for an alternate phase shift photomask in a semiconductor photomask processing system. The apparatus for measuring the etch depth of a substrate in an etch processing system comprises a measurement cell coupled to a mainframe of the etch processing system, and an etch depth measurement tool coupled to the bottom of the measurement cell, wherein an opening at the bottom of the measurement cell allows light beams to pass between the etch depth measurement tool and the substrate. The embodiments of the invention also relate to the method of preparing an alternate phase shift mask by partially etching the quartz substrate to an initial etch depth, followed by measuring the etch depth with an integrated measurement tool. The substrate is then etched and measured repeatedly until the targeted etch depth has been reached.

Abstract: A novel circuit is used to monitor the common-mode voltage at the summing junctions of the first integrator in a continuous-time ?? ADC, wherein the circuit produces a control voltage which adjusts the quiescent current of the feedback DAC to compensate for any common-mode offset current. Since the adjustment takes place within the feedback DAC, there is no extra noise added to the differential signal path. The implementation provides for no degradation to the SNR of the converter.

Abstract: A hybrid tuning circuit is used consisting of a digital finite state machine and an analog tuning circuit to effectively keep the RC product of the continuous time integrator constant across process, temperature, supply, and sampling rate variations. Since the implementation is continuous, the tracking is more accurate than traditional techniques. Using a carefully chosen clocking scheme, the technique gets rid of inter-symbol interference in the feedback DAC. The technique does not use a reference frequency, thereby eliminating the need for a user to identify a reference frequency.

Abstract: The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.

Abstract: Method and apparatus for supporting a substrate in a semiconductor substrate processing system are provided. A substrate is supported on two substrate support each having an inclined surface for receiving a portion of the substrate while minimizing contact with the substrate and guides for centering the substrate on the inclined surface. In one aspect, the two substrate supports are position facing each other on a ring disposed in a loadlock chamber with the substrate supported therebetween. Multiple sets of the substrate supports may be used to hold multiple substrates at a time in the loadlock chamber.

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.