Abstract: A light emitting module includes a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements. The lens includes a concave part having a light incident surface and an upper surface through which the light incident on the lens is emitted, and at least one of the light incident surface and the upper surface includes sections disposed at least 15° from a central axis and sequentially connected in a first direction.

Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.

Abstract: A light source module including a circuit board, a first light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a reflective portion disposed on the circuit board and having at least one recess accommodating the first light emitting device, and a bonding member disposed between the circuit board and the reflective portion. The reflective portion has a height greater than a height of the first light emitting device.

Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens, wherein the light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.

Abstract: A light source module includes a circuit board, board pads disposed on the circuit board, and a light emitting diode chip disposed on the board pads. The light emitting diode chip includes a substrate and a semiconductor stacking part disposed between the substrate and the circuit board, and the substrate includes an inclined part disposed at an upper portion thereof and a discharging part disposed at one side surface thereof.

Abstract: An integrated circuit includes a detector circuit including a sensor configured to sense an alteration to a physical characteristic of a substrate and to generate an alarm signal indicating such alteration and a circuit configured to respond to the generation of the alarm signal by implementing countermeasures. A smart card may include such a circuit to counteract a back side attack.

Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance portion having a shape which is concave inward from the lower portion of the light diffusing lens, a reflection portion having a shape which is concave inward from the upper portion of the light diffusing lens, and a light exit portion defined by the outer surface of the light diffusing lens. The light entrance portion has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as it goes toward the inside of the light diffusing lens.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.

Abstract: A light emitting device is disclosed. The light emitting device includes: a light emitting diode emitting light having a peak wavelength in the range of 415 nm to 435 nm; and a wavelength conversion unit disposed on the light emitting diode, wherein the wavelength conversion unit includes cyan phosphors emitting light having a peak wavelength in a cyan light wavelength band and red phosphors emitting light having a peak wavelength in a red light wavelength band, and a ratio of an output of light having a wavelength in the range of 435 nm to 465 nm to a total output of light emitted from the light emitting device is approximately equal to or less than 3%.

Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.

Abstract: A light emitting diode includes: at least one light emitting chip; a substrate including lead frames electrically connected to electrodes of the at least one light emitting chip; a lens disposed on the substrate and enclosing the at least one light emitting chip; and an oil disposed in the lens and the substrate.

Abstract: A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

Abstract: The light emitting device includes: an ultraviolet light emitting diode emitting light in an ultraviolet wavelength region; and blue phosphors, green phosphors, and red phosphors excited by the ultraviolet light emitting diode, wherein white light is formed by synthesis of the light emitted from the ultraviolet light emitting diode, light emitted from the blue phosphors, light emitted from the green phosphors, and light emitted from the red phosphors, the white light includes ultraviolet light, green light, blue light, and red light, an intensity of a peak wavelength of the green light is in a range of 1.8 to 2.1 times the intensity of a peak wavelength of the blue light, and an intensity of a peak wavelength of the red light is in a range of 2.8 to 3.1 times the intensity of the peak wavelength of the blue light.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.