Abstract: The present application relates to a conductive structure body and a manufacturing method thereof. The method for manufacturing the conductive structure body according to an exemplary embodiment of the present application includes forming a metal layer on a substrate and forming a darkening layer on the metal layer, in which the forming of the darkening layer is performed by reactive sputtering using CO2.

Abstract: A method for multiplexing a data information stream, including a systematic symbol and a non-systematic symbol, and a control information stream of at least three types in a wireless mobile communication system is disclosed. The method includes mapping the data information stream to a resource area so that the systematic symbol is not mapped to a specific resource area to which the control information stream is mapped, and mapping the control information stream to the specific resource area.

Abstract: Provided is a negative electrode active material comprising (a) a core including one or more non-carbon-based materials selected from the group consisting of silicon, nickel, germanium, and titanium, and (b) an organic polymer coating layer formed of a polymer compound having a content of a fluorine component of 50 wt % or more on a surface of the core.

Abstract: A method of transmitting uplink signal through a Physical Uplink Shared Channel (PUSCH) by a mobile device in a wireless communication system. The method includes generating multiplexed information by multiplexing a first type of control information and data information; and transmitting the multiplexed information and a second type of control information through the PUSCH. One or more Resource Blocks (RBs) for the PUSCH include N Single Carrier Frequency Division Multiple Access (SC-FDMA) symbols in a slot. The multiplexed information is mapped on a first set of SC-FDMA symbols, and the first set of SC-FDMA symbols includes SC-FDMA symbols other than an (N?3)th SC-FDMA symbol for a reference signal in the slot. The second type of control information is mapped on (N?4)th and (N?2)th SC-FDMA symbols in the slot, and the second type of control information includes Acknowledgement/Negative Acknowledgement (ACK/NACK) information.

Abstract: A method for multiplexing a data information stream, including a systematic symbol and a non-systematic symbol, and a control information stream of at least three types in a wireless mobile communication system is disclosed. The method includes mapping the data information stream to a resource area so that the systematic symbol is not mapped to a specific resource area to which the control information stream is mapped, and mapping the control information stream to the specific resource area.

Abstract: The present specification provides a conductive structure body comprising: a substrate; a conductive layer; at least one intermediate layer; and a darkening layer, and a method of manufacturing the same. The conductive structure body may prevent reflectance by the conductive layer without affecting conductivity of the conductive layer, and may improve a concealing property of the conductive layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body.

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor. The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.

Abstract: An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

Abstract: The present application relates to a conductive film, a method for manufacturing the same, and a display device including the same.

Abstract: Provided are a nuclear fuel rod for fast reactors that includes a metallic fuel slug coated with a protective coating layer and a fabrication method thereof. The nuclear fuel rod for fast reactors that includes a surface treated metallic fuel slug and a cladding tube according to the present invention has an excellent effect of stabilizing components of the metallic fuel slug and fission products or impurities, because the interdiffusion between the metallic fuel slug and the cladding tube does not occur. Also, since the uniform coating on the surface of the metallic fuel slug may be facilitated and fabrication costs may be significantly reduced in comparison to a typical technique of using a functional material for preventing the interdiffusion at an inner surface of the cladding tube, it may be suitable for fabricating the nuclear fuel rod for fast reactors.

Abstract: The present specification relates to a conductive structure body and a method for manufacturing the same.

Abstract: The disclosure relates to a method of controlling an electronic device, the method includes, based on a magnetic field generated by a source, obtaining a coordinate of a user's hand; and reflecting the obtained coordinate of the user's hand in a virtual reality environment based on a change of a location of the source due to a movement of the user.

Abstract: The present invention provides a transparent conductive substrate comprising: a transparent substrate, and a conductive pattern provided on the transparent substrate, wherein the conductive pattern comprises line breakage portions performing electric breakage, and a pattern of a broken line formed when the line breakage portions are connected comprises an irregular pattern shape. The present invention can minimize a moiré phenomenon and a diffraction phenomenon by external light by performing line breakage of a regular or irregular conductive pattern by using the irregular pattern.

Abstract: A semiconductor device includes a substrate having first and second regions, a first fin-type pattern and a second fin-type pattern formed in the first region and extending in a first direction, and a third fin-type pattern and a fourth fin-type pattern formed in the second region and extending in a third direction. A first source/drain is formed on the first fin-type pattern and a second source/drain region is formed on the second fin-type pattern. Each of first and second source/drains have a cross section defining a same convex polygonal shape. A third source/drain is formed on the third fin-type pattern and a fourth source/drain region is formed on the fourth fin-type pattern. Cross-sections of the third and fourth source/drains define different convex polygonal shapes from one another.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

Abstract: Disclosed is a method of forming a chalcogen compound thin film suitable for use in a light-absorption layer of a solar cell. The method includes manufacturing a precursor liquid including an Sn precursor material and an S precursor material, applying the precursor liquid to form a precursor film, and heat-treating the precursor film. The Sn precursor material and the S precursor material are liquid materials. The present invention provides a method of forming a chalcogen compound thin film using a liquid precursor material without a sulfurization process, thereby forming a high-quality SnS thin film at low cost using a process which is suitable for mass production. Further, the light-absorption layer is formed using a process which is suitable for mass production, thus enabling the manufacture of a solar cell including the chalcogen compound thin film at low cost.

Abstract: Provided are a nuclear fuel rod for fast reactors that includes a metallic fuel slug coated with a protective coating layer and a fabrication method thereof. The nuclear fuel rod for fast reactors that includes a surface treated metallic fuel slug and a cladding tube according to the present invention has an excellent effect of stabilizing components of the metallic fuel slug and fission products or impurities, because the interdiffusion between the metallic fuel slug and the cladding tube does not occur. Also, since the uniform coating on the surface of the metallic fuel slug may be facilitated and fabrication costs may be significantly reduced in comparison to a typical technique of using a functional material for preventing the interdiffusion at an inner surface of the cladding tube, it may be suitable for fabricating the nuclear fuel rod for fast reactors.

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

Abstract: Provided are a heating element, which includes: a transparent substance; a conductive heating line that is provided on at least one side of the transparent substance; bus bars that is electrically connected to the conductive heating line; and a power portion that is connected to the bus bars, wherein 30% or more of the entire area of the transparent substance has a conductive heating line pattern in which, when the straight line that intersects the conductive heating line is drawn, a ratio (distance distribution ratio) of standard deviation in respects to an average value of distances between adjacent intersection points of the straight line and the conductive heating line is 2% or more, and a method for manufacturing the same.