Abstract: A method for multiplexing a data information stream, including a systematic symbol and a non-systematic symbol, and a control information stream of at least three types in a wireless mobile communication system is disclosed. The method includes mapping the data information stream to a resource area so that the systematic symbol is not mapped to a specific resource area to which the control information stream is mapped, and mapping the control information stream to the specific resource area.

Abstract: The present specification relates to a conductive structure, a method of manufacturing the same, and an electrode including the conductive structure.

Abstract: A fluid storage tank according to an embodiment of the present invention comprises: a first outer wall section that forms a front face in the length direction, the width direction and the height direction so as to form a space portion in which a fluid is stored; a plurality of partition plates arranged along the length direction of the first outer wall portion to divide the space portion into the plurality of sub-space portions; and an end portion located between the outermost partition plate of the plurality of partition plates and the first outer wall portion, wherein each of the partition plates is formed with a fluid through hole comprising: a gas through hole located on the top of the partition plate; and a liquid through hole located on the bottom of the partition plate so that fluids between the sub-pace portions are in communication with each other.

Abstract: The present specification relates to a liquid crystal display device.

Abstract: The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.

Abstract: The present specification relates to a thin-film transistor substrate and a display device including the same.

Abstract: A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).

Abstract: A battery support structure of a vehicle includes a number of battery support members installed on a bottom surface of a rear floor of a vehicle body to support a battery unit. The battery support members include cross members for battery support extending in a widthwise direction of the vehicle body. A pair of side sills is installed on opposite sides of the rear floor. A rear cross member is installed on the bottom surface of the rear floor. At least one of the plurality of cross members for battery support is connected to the rear cross member and the side sill.

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

Abstract: The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

Abstract: The touch panel comprises: a first transparent substrate divided into an active area and a non-active area located around the active area; a sensing pattern part that includes first sensing cells arranged in the active area of the transparent substrate in the longitudinal direction, a second transparent substrate provided on the first sensing cells, and second sensing cells arranged on the second transparent substrate in the lateral direction; and first sensing lines and second sensing lines provided in the non-active area of the first transparent substrate to connect the first sensing cells and the second sensing cells to an external driving circuit, respectively, wherein an extended transparent substrate extending from the second transparent substrate along the interconnection wires of the second sensing cells is formed in the non-active area of the first transparent substrate.

Abstract: The present specification relates to an organic light emitting device.

Abstract: The present specification relates to a conductive structure and a method for manufacturing the same.

Abstract: The present invention relates to a display device.

Abstract: The present application relates to a conductive structure body and a method for manufacturing the same. A conductive structure body according to an exemplary embodiment of the present application includes a transparent conductive layer, a metal layer which is provided on the transparent conductive layer and includes aluminum, and an aluminum oxynitride layer which is provided on the metal layer.

Abstract: The present specification relates to a conductive structure body, and an electrode and a display device including the same.

Abstract: This disclosure relates to an anti-fingerprint film with low interaction energy that includes nanoscale or microscale microprojections having a contact side with the film, the upper side facing therewith, and a side wall connecting the contact side and the upper side, and has a shape such that the internal angle formed by the side wall and the film is an obtuse angle, an anti-fingerprint film including predetermined linear micropatterns or a continuous phase micropattern, and an electrical and electronic apparatus including the anti-fingerprint film.

Abstract: Disclosed is a method of forming a chalcogen compound thin film suitable for use in a light-absorption layer of a solar cell. The method includes manufacturing a precursor liquid including an Sn precursor material and an S precursor material, applying the precursor liquid to form a precursor film, and heat-treating the precursor film. The Sn precursor material and the S precursor material are liquid materials. The present invention provides a method of forming a chalcogen compound thin film using a liquid precursor material without a sulfurization process, thereby forming a high-quality SnS thin film at low cost using a process which is suitable for mass production. Further, the light-absorption layer is formed using a process which is suitable for mass production, thus enabling the manufacture of a solar cell including the chalcogen compound thin film at low cost.

Abstract: An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

Abstract: The present application relates to a conductive structure and a method for manufacturing the same. The conductive structure according to an exemplary embodiment of the present application includes a substrate, a metal layer which is provided on the substrate and includes copper, a discoloration preventing layer provided on the metal layer, and a darkening layer which is provided on the discoloration preventing layer and includes one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride.