Abstract: There is provided a cooperative driving control method based on a vehicle security status. The cooperative driving method according to an embodiment includes: identifying a security status of a cooperative driving target vehicle; determining a cooperative driving strategy according to the identified security status; and controlling driving according to the determined cooperative driving strategy. Accordingly, cooperative driving may be performed or excluded based on a security status of a target vehicle, so that an accident may be prevented from being caused by cooperative driving with a problematic vehicle, and safety of a driver and an occupant may be guaranteed.

Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains. The grain boundary includes a secondary phase including Sn, a rare-earth element, and a first subcomponent. The rare-earth element includes at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd and Yb. The first subcomponent includes at least one of Si, Mg, and Al.

Abstract: Disclosed is a non-transitory computer readable medium storing a computer program, in which when the computer program is executed by one or more processors of a computing device, the computer program performs operations to provide methods for detecting flaws, and the operations may include: extracting a flaw patch from a flaw image including a flaw; preprocessing at least one of the flaw image or non-flaw image not including a flaw; extracting a non-flaw patch from at least one of the preprocessed flaw image or non-flaw image; and training a neural network model for classifying patches to flaw or non-flaw with a training data set including the flaw patch and the non-flaw patch.

Abstract: A color conversion panel includes a first color filter and a second color filter that are disposed on a substrate, a low refractive index layer disposed on the substrate, the first color filter, and the second color filter, the low refractive index layer including at least one of a first blue pigment and a first blue dye, a first color conversion layer overlapping the first color filter and including a semiconductor nanocrystal, a second color conversion layer overlapping the second color filter and including a semiconductor nanocrystal, and a transmissive layer that overlaps the low refractive index layer.

Abstract: A display device including: a first substrate; a transflective layer disposed on a surface of the first substrate; a wavelength conversion layer disposed on the transflective layer; a capping layer disposed on the wavelength conversion layer, a first polarizing layer disposed on the capping layer; and a second polarizing layer disposed on the other surface of the first substrate. The first polarizing layer and the second polarizing layer have different polarization directions.

Abstract: Provided is a method and apparatus for receiving a reference signal. A wireless user device may determine, based on a synchronization signal (SS) block index and based on an index associated with a time interval, an initialization value associated with a reference signal for a physical broadcast channel (PBCH). The wireless user device may receive, based on the initialization value and based on a frequency domain shift value, the reference signal via at least one resource element (RE). The reference signal may be mapped, based on the frequency domain shift value, to the at least one RE. The wireless user device may receive the PBCH.

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a plurality of gate electrodes that are stacked on a substrate and are spaced apart from each other in a vertical direction and a channel region extending through the plurality of gate electrodes in the vertical direction. Each of the plurality of gate electrodes may include a first conductive layer defining a recess recessed toward the channel region, and a second conductive layer in the recess defined by the first conductive layer. A first concentration of impurities in the second conductive layer may be higher than a second concentration of the impurities in the first conductive layer, and the impurities may include nitrogen (N).

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a plurality of gate electrodes that are stacked on a substrate and are spaced apart from each other in a vertical direction and a channel region extending through the plurality of gate electrodes in the vertical direction. Each of the plurality of gate electrodes may include a first conductive layer defining a recess recessed toward the channel region, and a second conductive layer in the recess defined by the first conductive layer. A first concentration of impurities in the second conductive layer may be higher than a second concentration of the impurities in the first conductive layer, and the impurities may include nitrogen (N).

Abstract: A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.

Abstract: A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.