Abstract: Method for fabricating a nonvolatile ferroelectric memory, is disclosed, which can prolong a life time of the memory, including the steps of forming an insulating film on a semiconductor substrate, forming a bottom electrode on the insulating film, forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, the material having an antiferroelectric phase which can not be induced to a ferroelectric phase by an electric field, and the induced ferroelectric phase exhibiting a hysteresis in polarization-electric field characteristic and unable to be induced to an antiferroelectric phase by an electric field, and forming a top electrode on the ferroelectric film.

Abstract: A low temperature sintering microwave dielectric composition which can be sintered at a temperature of below 1250.degree. C. The composition includes a composition of xLiO.sub.1/2 --yCaO--.sub.z SmO.sub.3/2 --wTiO.sub.2 --qBO.sub.3/2 where 13.00.ltoreq.x.ltoreq.16.00, 11.00.ltoreq.y.ltoreq.13.00, 18.00.ltoreq.z.ltoreq.21.00, 45.00.ltoreq.w.ltoreq.51.00 and 0<q.ltoreq.12.0 wherein the numeric values are based on mol % with respect to the entire composition.