Abstract: A method for manufacturing the pellicle includes the steps of forming upper and lower silicon nitride layers on opposite surfaces of a wafer substrate, forming a metal layer on the lower silicon nitride layer, etching the upper silicon nitride layer to a preset thickness after the forming of the metal layer, etching and removing the metal layer after the etching of the upper silicon nitride layer, forming a graphene thin film on the upper silicon nitride layer, forming a pattern on the lower silicon nitride layer, etching the lower silicon nitride layer according to the formed pattern, and etching the wafer substrate along the lower silicon nitride layer etched according to the pattern.

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

Abstract: A method for manufacturing a graphene thin film for a pellicle material using ozone gas includes a graphene forming step of forming graphene on an upper surface of a substrate, an ozone treatment step of exposing the graphene layer formed in the graphene forming step to ozone, and an etching step of heat-treating and etching the ozone-treated graphene layer.

Abstract: Provided is an apparatus and method for encoding/decoding a moving picture based on adaptive scanning. The moving picture apparatus and method can increase a compression rate based on adaptive scanning by performing intra prediction onto blocks of a predetermined size, and scanning coefficients acquired from Discrete Cosine Transform (DCT) of a residue signal and quantization differently according to the intra prediction mode. The moving picture encoding apparatus includes: a mode selector for selecting and outputting a prediction mode; a predictor for predicting pixel values of pixels to be encoded of an input video based on the prediction mode to thereby output a residue signal block; a transform/quantization unit for performing DCT onto the residue signal block and quantizing the transformed residue signal block; and an encoder for adaptively scanning and encoding the quantized residue signal block based on the prediction mode.

Abstract: Chimeric antigen receptor-transduced T cells (CAR-T cells) show a remarkable efficacy for some hematological malignancies. However, CAR targets are restricted to a few antigens primarily due to on-target off-tumor toxicities of CAR-T cells. Although several strategies were proposed to avoid on-target off-tumor toxicities, most of them use complicated designs including dual gene expression for specificity. In this study, we show that switchable CAR immune cells (e.g., CAR-T cells) with a tumor-targeting adaptor can mitigate on-target off-tumor toxicity against the tumor antigen that cannot be targeted with conventional CAR immune cells due to this toxicity, such as CD40 and CS1. Therefore, a switchable CAR system is a valuable tool to control CAR-T cell toxicity while maintaining therapeutic efficacy, which enables CAR anti-tumor target expansion.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

Abstract: Provided is a portable power generating system including a base, an electric motor fixed on the base, a circular rotating table located at a center of the base and rotated by the electric motor, and two or more power generators fixed on the base and driven by the circular rotating table. Further, the system includes an extended generator shaft where magnet rollers are attached for increasing centripetal force and rotating on the rotating table in one direction. Also, a battery is provided for starting the system.

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

Abstract: Provided is a renewable power generating system including a motor and one or more generators. Each of the motor and the generators comprises a front extended shaft and a rear extended shaft, a first flywheel is installed at the end of the rear extended shaft, and a second flywheel is installed at the end of the front extended shaft. Also, a third flywheel is detachably connected to the second flywheel, and a turbine installed on the third flywheel, and the turbine comprises multiple arms. The first flywheel, the second flywheel and the third flywheel rotates together when the motor rotates, and the system can produce an electric power when rotating.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.

Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.