Abstract: An automated driving system of a vehicle includes a driver monitoring unit configured to perform at least one of monitoring a gaze of a driver and determining a position of a hand of the driver, an automated-driving-level switching unit configured to determine whether a transition of a driving control over the vehicle is required based on whether driving environment of the vehicle has changed during the vehicle being driven under control of the automated driving system, and determine an automated driving level to be switched based on a driver monitoring result obtained by the drive monitoring unit, and an automated driving control unit configured to control the vehicle according to the automated driving level.

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

Abstract: Provided is an apparatus for online action detection, the apparatus including a feature extraction unit configured to extract a chunk-level feature of a video chunk sequence of a streaming video, a filtering unit configured to perform filtering on the chunk-level feature, and an action classification unit configured to classify an action class using the filtered chunk-level feature.

Abstract: Provided is a portable power generating system including a base, an electric motor fixed on the base, a circular rotating table located at a center of the base and rotated by the electric motor, and two or more power generators fixed on the base and driven by the circular rotating table. Further, the system includes an extended generator shaft where magnet rollers are attached for increasing centripetal force and rotating on the rotating table in one direction. Also, a battery is provided for starting the system.

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

Abstract: A secondary battery comprises an electrode assembly, a can, and an insulator. The electrode assembly includes a first electrode, a separator, and a second electrode alternately stacked and wound. The can has an accommodation part accommodating the electrode assembly therein, and the can comprises a first can and a second can having cylindrical shapes open in a direction facing each other. The insulator insulates an overlapping portion between the first can and the second can. The first can is electrically connected to the first electrode, and the second can is electrically connected to the second electrode. The insulator has a short-circuit induction through-part defined by a through-hole or a cutoff line, such that a short circuit occurs between the first can and the second can through the short-circuit induction through-part when it is deformed in shape as heat or a pressure is applied to contract or expand the insulator.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

Abstract: Provided is a renewable power generating system including a motor and one or more generators. Each of the motor and the generators comprises a front extended shaft and a rear extended shaft, a first flywheel is installed at the end of the rear extended shaft, and a second flywheel is installed at the end of the front extended shaft. Also, a third flywheel is detachably connected to the second flywheel, and a turbine installed on the third flywheel, and the turbine comprises multiple arms. The first flywheel, the second flywheel and the third flywheel rotates together when the motor rotates, and the system can produce an electric power when rotating.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.

Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.

Abstract: The present disclosure relates to a method of providing a pre-5th-Generation (5G) or 5G communication system for supporting higher data rates Beyond 4th-Generation (4G) communication system, such as Long Term Evolution (LTE). The method includes receiving configuration information comprising at least one information element indicating transmission resources for the reference signals, receiving downlink control information indicating that a transmission of at least one of the reference signals is activated, and receiving the at least one of the reference signals based on the configuration information, in response to receiving the downlink control information.

Abstract: Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.

Abstract: Proposed are renewable power generating systems driven by wind or wheel power such as train vehicle power generating systems, which are easily installed on train vehicles of trains, and which generate power without additional carbon emissions to avoid environmental pollution. One or more generator holders to hold one or more generators are installable on a train vehicle chassis. A generator wheel may be configured to touch a rail and may rotate in any direction along the rail. A generator axle may couple one or more generators to the generator wheel. The one or more generators may generate electrical power and produce zero carbon emissions while the generator wheel rotate on the rail. One or more wind turbines may also be coupled to the generator axle to supply power to the one or more generators so that the one or more generators produce zero carbon emissions while the train vehicle is moving.

Abstract: Provided is a portable power generating system including a base, an electric motor fixed on the base, a circular rotating table located at a center of the base and rotated by the electric motor, and two or more power generators fixed on the base and driven by the circular rotating table. Further, the system includes an extended generator shaft where magnet rollers are attached for increasing centripetal force and rotating on the rotating table in one direction. Also, a battery is provided for starting the system.

Abstract: Proposed is a train derailment and rollover preventing system to improve train safety. To prevent derailment and rollover of a train vehicle, the train vehicle can have a magnetic roller coupled to a magnet roller holder which can space apart the magnetic roller from the wheel. The wheel may be coupled to a wheel shaft which may be coupled to a train vehicle chassis and the magnetic roller holder may be coupled to the train vehicle chassis. The magnetic roller holder may include a shock adsorber positioned between the train vehicle chassis and the magnetic roller. The magnetic roller may include at least one of a permanent magnet or an electric magnet to supply a magnetic force. The magnetic force may be in a range of one hundred pounds pulling force to five thousand pounds pulling force. A train vehicle may be a locomotive or a train car in a train.

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.