Abstract: The present invention is characterized by comprising: a plurality of user terminals for transmitting location information to a server; a photographing unit for capturing an image by means of a camera installed in a dash cam or a camera provided in the user terminal; an activation unit that activates an area where a preset update cycle has been exceeded as an area where information can be updated; an image transmission unit that, when location information of the user terminal received by the server is detected as the area activated by the activation unit, transmits the image captured by the photographing unit to the server through the user terminal; an image analysis unit that extracts map information including store information and terrain information from the image that the image transmission unit has transmitted to the server, and compares the map information with existing map information stored in the server to extract changed map information; and an updating unit that updates the existing map information

Abstract: A vehicle thermal management circuit includes a refrigerant line configured to cause refrigerant to flow in the order of a compressor, an indoor condenser and an outdoor heat exchanger of an indoor air-conditioning apparatus, a battery cooling line configured to circulate cooling water between a battery and a battery radiator or between the battery and a chiller unit, an electric part cooling line configured to circulate cooling water between an electronic driving unit and an electric part radiator or between the driving unit and the chiller, and an accumulation unit located at an upstream point of the compressor on the refrigerant line, includes an expansion valve and a refrigerant heater, and is configured to receive the refrigerant discharged from the chiller or the evaporator and provide the received refrigerant to the compressor or to expand or heat the refrigerant and provides the expanded or heated refrigerant to the compressor.

Abstract: A pouch-type secondary battery according to an embodiment of the present invention for solving the above problems includes a cup part configured to accommodate an electrode assembly formed by stacking electrodes and separators, wherein the cup part includes: a bottom portion configured to form a bottom; an outer wall configured to form a side surface and meet the bottom portion; a punch edge configured to connect the bottom portion to the outer wall; a thickness edge configured to connect two adjacent outer walls to each other; and a corner formed by connecting the two adjacent punch edges to the thickness edge, wherein at least one of the punch edges is rounded, at least one of the thickness edge is rounded, at least one of the corner is rounded and has a curvature radius different from that of each of the punch edge and the thickness edge.

Abstract: Provided is a semiconductor device and method of manufacturing same.

Abstract: The present disclosure relates to an apparatus for controlling a side mirror of an autonomous vehicle and a method thereof. According to an embodiment of the present disclosure, it is possible to detect whether a vehicle is autonomously driven and to fold the side mirror such that a mirror surface is in close contact with a vehicle body surface or side window glass or to insert the side mirror into the inner space of the vehicle when the vehicle is autonomously driven. Through the present disclosure, it is possible to notify an external vehicle of information indicating that the vehicle is driven in an autonomous driving mode.

Abstract: Disclosed herein is an apparatus and method for executing a magic state distillation circuit in a logical qubit quantum system. The apparatus outputs a distilled magic state |Y>L by executing a magic state |Y>L distillation circuit in which multiple multi-target CNOT operations are performed in parallel and outputs a distilled magic state |A>L by executing a magic state |A>L distillation circuit in which multiple multi-target CNOT operations are performed in parallel. The magic state |Y>L distillation circuit is configured with three code blocks, code blocks 1 and 2 being configured with multiple multi-target CNOT operations and code block 3 being configured with SL operations and measurement operations, and the magic state |A>L distillation circuit is configured with three code blocks, code blocks 1 and 2 being configured with multiple multi-target CNOT operations and code block 3 being configured with TL+ operations and measurement operations.

Abstract: An apparatus and a method are configured to control a steering wheel of an autonomous driving vehicle. A state of a driver may be monitored during autonomous driving, and at least one of an upward/downward location, a leftward/rightward tilting angle, or an axial movement of the steering wheel of the autonomous driving vehicle may be controlled based on the state of the driver. As a result, danger information may be delivered to the driver through a dual system during autonomous driving.

Abstract: A multi-stack semiconductor device includes: a substrate; and a plurality of multi-stack transistor structures arranged on the substrate in a channel width direction, wherein the multi-stack transistor structure include at least one lower transistor structure and at least one upper transistor structure stacked above the lower transistor structure, wherein the lower and upper transistor structures include at least one channel layer as a current channel, wherein the lower transistor structures of at least two multi-stack transistor structures have different channel-layer widths.

Abstract: Provided is an apparatus and method for encoding/decoding a moving picture based on adaptive scanning. The moving picture apparatus and method can increase a compression rate based on adaptive scanning by performing intra prediction onto blocks of a predetermined size, and scanning coefficients acquired from Discrete Cosine Transform (DCT) of a residue signal and quantization differently according to the intra prediction mode. The moving picture encoding apparatus includes: a mode selector for selecting and outputting a prediction mode; a predictor for predicting pixel values of pixels to be encoded of an input video based on the prediction mode to thereby output a residue signal block; a transform/quantization unit for performing DCT onto the residue signal block and quantizing the transformed residue signal block; and an encoder for adaptively scanning and encoding the quantized residue signal block based on the prediction mode.

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

Abstract: A method for manufacturing the pellicle includes the steps of forming upper and lower silicon nitride layers on opposite surfaces of a wafer substrate, forming a metal layer on the lower silicon nitride layer, etching the upper silicon nitride layer to a preset thickness after the forming of the metal layer, etching and removing the metal layer after the etching of the upper silicon nitride layer, forming a graphene thin film on the upper silicon nitride layer, forming a pattern on the lower silicon nitride layer, etching the lower silicon nitride layer according to the formed pattern, and etching the wafer substrate along the lower silicon nitride layer etched according to the pattern.

Abstract: A method for manufacturing a graphene thin film for a pellicle material using ozone gas includes a graphene forming step of forming graphene on an upper surface of a substrate, an ozone treatment step of exposing the graphene layer formed in the graphene forming step to ozone, and an etching step of heat-treating and etching the ozone-treated graphene layer.

Abstract: Chimeric antigen receptor-transduced T cells (CAR-T cells) show a remarkable efficacy for some hematological malignancies. However, CAR targets are restricted to a few antigens primarily due to on-target off-tumor toxicities of CAR-T cells. Although several strategies were proposed to avoid on-target off-tumor toxicities, most of them use complicated designs including dual gene expression for specificity. In this study, we show that switchable CAR immune cells (e.g., CAR-T cells) with a tumor-targeting adaptor can mitigate on-target off-tumor toxicity against the tumor antigen that cannot be targeted with conventional CAR immune cells due to this toxicity, such as CD40 and CS1. Therefore, a switchable CAR system is a valuable tool to control CAR-T cell toxicity while maintaining therapeutic efficacy, which enables CAR anti-tumor target expansion.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

Abstract: Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

Abstract: Provided is a portable power generating system including a base, an electric motor fixed on the base, a circular rotating table located at a center of the base and rotated by the electric motor, and two or more power generators fixed on the base and driven by the circular rotating table. Further, the system includes an extended generator shaft where magnet rollers are attached for increasing centripetal force and rotating on the rotating table in one direction. Also, a battery is provided for starting the system.