Abstract: A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.

Abstract: In a deposition apparatus, as a plurality of plasma connection terminals that transfer plasma power to a plasma electrode are coupled in parallel to the plasma electrode, resistance caused by the plurality of plasma connection terminals is reduced and a current is distributed such that heat generated in the plurality of plasma connection terminals can be distributed. Therefore, even if high RF power is used, by preventing the plurality of plasma connection terminals from being oxidized, plasma is stably supplied and thus, stability of a deposition apparatus and the accuracy of a process can be enhanced.

Abstract: A deposition apparatus and a method of depositing a thin film using the same are provided. By maintaining pressure of an external chamber between a reaction space and an outer wall slightly lower than pressure of the reaction space by supplying a charge gas to an external chamber of a space between the reaction space and an outer wall, parasitic plasma can be prevented from being generated within the external chamber. When loading or unloading a substrate, a charge gas of the external chamber can be prevented from flowing backward to the reaction space, and by supplying nitrogen gas as a charge gas, even if high plasma power is supplied, parasitic plasma can be effectively prevented from being generated in the external chamber.

Abstract: A thin film deposition apparatus including a substrate mounting error detector, a chamber and a substrate support positioned in the chamber. The substrate support is configured to support a substrate. The substrate mounting error detector includes: a light source configured to provide a light beam to the substrate, such that the substrate reflects the light beam; a collimator configured to selectively pass at least a portion of the light beam reflected by the substrate; and an optical sensor configured to detect the at least a portion of the reflected light beam passed by the collimator. The detector is positioned and oriented to detect substrate position on a lowered support prior to raising the support into contact with an upper cover of a clamshell reactor arrangement. This configuration allows a thin film deposition process only if the substrate is correctly mounted on the substrate support. Thus, abnormal deposition due to a substrate mounting error is prevented in advance.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reaction spaces, a plurality of plasma electrodes respectively disposed in the reaction spaces, a first plasma processor connected to at least two plasma electrodes, and a first plasma power source connected to the first plasma processor. The first plasma processor may include a plasma distributor or a plasma splitter.

Abstract: A thin film deposition apparatus including a substrate mounting error detector, a chamber and a substrate support positioned in the chamber. The substrate support is configured to support a substrate. The substrate mounting error detector includes: a light source configured to provide a light beam to the substrate, such that the substrate reflects the light beam; a collimator configured to selectively pass at least a portion of the light beam reflected by the substrate; and an optical sensor configured to detect the at least a portion of the reflected light beam passed by the collimator. The detector is positioned and oriented to detect substrate position on a lowered support prior to raising the support into contact with an upper cover of a clamshell reactor arrangement. This configuration allows a thin film deposition process only if the substrate is correctly mounted on the substrate support. Thus, abnormal deposition due to a substrate mounting error is prevented in advance.

Abstract: A semiconductor doping method includes steps of forming an insulation layer on a substrate, forming a semiconductor layer on the insulation layer, forming a photoresist layer on the insulation layer, patterning the photoresist layer to provide a portion of the photoresist layer on a first portion of the semiconductor layer, hard baking the portion of the photoresist layer at a first hard-baking temperature of more than about 140° C., doping the semiconductor layer with an impurity in regions other than the first portion of the semiconductor layer, and removing the portion of the photoresist layer.

Abstract: A semiconductor doping method includes steps of forming an insulation layer on a substrate, forming a semiconductor layer on the insulation layer, forming a photoresist layer on the insulation layer, patterning the photoresist layer to provide a portion of the photoresist layer on a first portion of the semiconductor layer, hard baking the portion of the photoresist layer at a first hard-baking temperature of more than about 140°C., doping the semiconductor layer with an impurity in regions other than the first portion of the semiconductor layer, and removing the portion of the photoresist layer.