Abstract: An insulation layer is formed on a substrate. A first mask is formed on the insulation layer. The first mask includes a plurality of line patterns arranged in a second direction. The plurality of line patterns extend in a first direction substantially perpendicular to the second direction. A second mask is formed on the insulation layer and the first mask. The second mask includes an opening partially exposing the plurality of line patterns. The opening has an uneven boundary at one of a first end portion in the first direction and a second end portion in a third direction substantially opposite to the first direction. The insulation layer is partially removed using the first mask and the second mask as an etching mask, thereby forming a plurality of first trenches and second trenches. The plurality of first trenches and the second trenches are arranged in a staggered pattern.

Abstract: A magnetic body structure including: a magnetic layer pattern; and a conductive pattern including a metallic glass alloy and covering at least a portion of the magnetic body structure.

Abstract: A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

Abstract: Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

Abstract: There is provided a source driver capable of controlling the timing of source line driving signals in a liquid crystal display device. The source driver includes a plurality of output circuits, each output circuit including an output buffer and a switch. The output buffer amplifies an analog image signal, and the switch outputs the amplified analog image signal as a source line driving signal in response to a control signal. The source driver further comprises a control circuit for generating the control signal, the control circuit comprising: a delay circuit delaying a switch signal and generating a delayed switch signal; and a multiplexer selecting one of the switch signal and the delayed switch signal in response to a selection signal and outputting the selected signal as the control signal.

Abstract: A magnetic body structure including: a magnetic layer pattern; and a conductive pattern including a metallic glass alloy and covering at least a portion of the magnetic body structure.

Abstract: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.

Abstract: Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state.

Abstract: An exemplary method of forming a variable resistance memory may include forming first source/drain regions in a substrate, forming gate line structures and conductive isolation patterns buried in the substrate with the first source/drain regions interposed therebetween, and forming lower contact plugs on the first source/drain regions. The forming of lower contact plugs may include forming a first interlayer insulating layer, including a first recess region exposing the first source/drain regions adjacent to each other in a first direction, forming a conductive layer in the first recess region, patterning the conductive layer to form preliminary conductive patterns spaced apart from each other in the first direction, and patterning the preliminary conductive patterns to form conductive patterns spaced apart from each other in a second direction substantially orthogonal to the first direction.

Abstract: A timing controller that includes a noise detection circuit and a setting control unit. The noise detection circuit includes a detection unit and a reset signal generating unit. The detection unit outputs a detection signal having a first logic level based on at least one of a plurality of reference data toggling asynchronous with a clock signal. The reset signal generating unit outputs a reset signal having a second logic level based on the detection signal. The setting control unit stores setting data and initializes the setting data in response to the reset signal having the first logic level, and the setting data are used to process red, green and blue (RGB) image data.

Abstract: A method of operating a phase-change memory device including a phase-change layer and a unit applying a voltage to the phase-change layer is provided. The method includes applying a reset voltage to the phase-change layer, wherein the reset voltage includes at least two pulse voltages which are continuously applied.

Abstract: In a method of manufacturing a probe card, a plurality of probe modules, including a sacrificial substrate and probes on the sacrificial substrate, is prepared. The probe modules are mutually aligned to form a probe module assembly having the aligned probe modules and a desired size. The probe module assembly is then attached to a probe substrate. Thus, the probe card having a large size may be manufactured.

Abstract: A method of operating a phase-change memory device, including a phase-change layer and a unit applying a voltage to the phase-change layer, which includes applying a reset voltage to the phase-change layer, wherein the reset voltage includes at least two pulse voltages which are continuously applied.

Abstract: Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state.

Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05?x1?0.30, 0.00?y?0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract: In a method of manufacturing bonding probes, bump layer patterns are formed on terminals of a multi-layered substrate. A first wetting layer pattern having a wettability with respect to a solder paste, and a non-wetting layer pattern having a non-wettability with respect to the solder paste are formed on the bump layer patterns. The solder paste is formed on the first wetting layer and the non-wetting layer pattern. The probes, which make contact with an object, are bonded to the solder paste. The solder paste on the non-wetting layer pattern reflows along a surface of the first wetting layer pattern to form an adhesive layer on the first wetting layer pattern. Thus, a sufficient amount of the solder paste, which is required for bonding the probes, may be provided to firmly bond the probes.

Abstract: A source driver output circuit of a thin film transistor (TFT) liquid crystal display (LCD) includes first through n-th voltage generators, first through n-th switching portions, first through n-th sub switching portions, and a switching circuit. The voltage generators receive first through n-th corresponding input voltages and generate first through n-th sub input voltages. The switching portions generate the sub input voltages as first through n-th corresponding output voltages when activated, or cut off the sub input voltages when deactivated. The sub switching portions connect predetermined share lines to the output voltages when activated, or cut off the predetermined share lines when deactivated. The switching circuit maintains each of the share line voltages equally at an intermediate voltage level that is between the share line voltages. Therefore, the slew rate of a signal input to the panel from the source driver can be improved, and current consumption in the source driver can be reduced.

Abstract: Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.

Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100?(X+Y+Z). The index X of indium (In) is in the range of 25 wt %?X?60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %?Y?17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z?75 wt %.