Abstract: Methods, systems, and devices for sequential voltage control for a memory device are described. A memory device may have various voltage sources that support different voltage levels used in various operations of the memory device. Voltage sources of a memory device may be disabled under some circumstances, such as when the memory device is idled, or operated in a low-power or powered-down mode, among other circumstances. In accordance with examples as disclosed herein, voltage sources of a memory device or memory die may be sequentially enabled or sequentially disabled. For example, voltage sources may be enabled in an order from voltage sources having relatively higher nominal voltages to voltage sources having relatively lower voltages, or disabled in an order from voltage sources having relatively lower nominal voltages to voltage sources having relatively higher voltages.

Abstract: Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times When the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

Abstract: A regulator includes an operational amplifier, a programmable offset voltage, and a circuit. The operational amplifier includes a non-inverting input, an inverting input, and an output. The programmable offset voltage is configured to cancel a built-in offset voltage of the regulator based on a code. The circuit is configured to set the code based on a sensed built-in offset voltage of the regulator in response to an offset cancellation calibration mode enable signal.

Abstract: Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

Abstract: Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Abstract: A regulator includes an operational amplifier, a programmable offset voltage, and a circuit. The operational amplifier includes a non-inverting input, an inverting input, and an output. The programmable offset voltage is configured to cancel a built-in offset voltage of the regulator based on a code. The circuit is configured to set the code based on a sensed built-in offset voltage of the regulator in response to an offset cancellation calibration mode enable signal.

Abstract: Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Abstract: Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Abstract: Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

Abstract: Apparatuses and methods for capturing data using a divided clock are described. An example apparatus includes a clock divider configured to receive a DQS signal, and to provide divided clock signals. A divided clock signal of the divided clock signals has a frequency that is less than a frequency of the DQS signal. The example apparatus further includes a command circuit configured to receive a command, and to assert one of a plurality of flag signals based on the divided clock signals and on a defined latency from a time of receipt of the command. The example apparatus further includes a data capture circuit configured serially receive data associated with the command and to provide deserialized data responsive to the divided clock signals. The data capture circuit is further configured to sort the deserialized data based on the asserted one of the plurality of flag signals to provide sorted data.

Abstract: Apparatuses and methods for capturing data using a divided clock are described. An example apparatus includes a clock divider configured to receive a DQS signal, and to provide divided clock signals. A divided clock signal of the divided clock signals has a frequency that is less than a frequency of the DQS signal. The example apparatus further includes a command circuit configured to receive a command, and to assert one of a plurality of flag signals based on the divided clock signals and on a defined latency from a time of receipt of the command. The example apparatus further includes a data capture circuit configured serially receive data associated with the command and to provide deserialized data responsive to the divided clock signals. The data capture circuit is further configured to sort the deserialized data based on the asserted one of the plurality of flag signals to provide sorted data.

Abstract: An optical system for an automatic lens meter for measuring the refractive power of a lens to be examined.

Abstract: An optical system for an automatic lens meter for measuring the refractive power of a lens to be examined.

Abstract: It is an objective of the present invention to provide a pipe latch circuit with simpler control, smaller footprint, and higher speed operation. For this purpose, the present invention provides a pipe latch circuit for storing a sequentially received plurality of first data and second data and outputting them as rising edge output data or falling edge output data.

Abstract: It is an objective of the present invention to provide a pipe latch circuit with simpler control, smaller footprint, and higher speed operation.

Abstract: A semiconductor memory device employs an adaptive output driver to vary the strength of the output driver with the variation in external voltage and temperature. For this purpose, the semiconductor memory device with the adaptive output driver includes a shift register unit for producing a control signal so as to control the voltage level of the adaptive output driver, a data masking buffer for generating a reference voltage to be compared with the voltage level of the adaptive output driver, an adaptive output driver for varying its strength in response to the control signal provided from the shift register unit, and a comparator for comparing the reference voltage with the voltage level of the adaptive output driver to thereby generate a signal determining whether or not the shift register unit should perform a shift operation.

Abstract: A semiconductor memory device employs an adaptive output driver to vary the strength of the output driver with the variation in external voltage and temperature. For this purpose, the semiconductor memory device with the adaptive output driver includes a shift register unit for producing a control signal so as to control the voltage level of the adaptive output driver, a data masking buffer for generating a reference voltage to be compared with the voltage level of the adaptive output driver, an adaptive output driver for varying its strength in response to the control signal provided from the shift register unit, and a comparator for comparing the reference voltage with the voltage level of the adaptive output driver to thereby generate a signal determining whether or not the shift register unit should perform a shift operation.

Abstract: A hierarchical word line driving circuit for a semiconductor memory device can reduce a sub-threshold voltage leakage current because a sub-word line is disabled at a back bias voltage, overcome a layout penalty because an additional NMOS transistor for preventing the sub-word line from floating is not employed, and sufficiently obtain a line pitch passing above the sub-word line.