Patents by Inventor Ki-Nam Kim

Ki-Nam Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130119349
    Abstract: A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.
    Type: Application
    Filed: November 2, 2012
    Publication date: May 16, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-jong CHUNG, U-in CHUNG, Ki-nam KIM
  • Patent number: 8373321
    Abstract: The present invention features a terminal assembly for a motor of a hybrid vehicle as a wire connection structure of a concentrated winding motor, which can maintain a gap between a plurality of terminals using a clip and a holder in an insulated manner. Such a terminal assembly for a motor of a hybrid vehicle, includes: an open type holder with an open top; a plurality of terminals concentrically arranged and inserted into the holder; and a plurality of clips, each inserted between the terminals in an insulated manner to maintain a gap between the terminals.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: February 12, 2013
    Assignees: Hyundai Motor Company, Kia Motors Corporation, Hyundai Mobis Co., Ltd.
    Inventors: Hyeoun Dong Lee, Do Hyun Kim, Ki Nam Kim, Sam Gyun Kim, Tack Hwan Kwon
  • Patent number: 8334556
    Abstract: A semiconductor device includes a semiconductor substrate having an active region and an isolation region. A gate structure is provided on the semiconductor device. First and second impurity regions are provided in the substrate on both sides of the gate structure. A pad electrode is provided to contact the first impurity region. Because the pad electrode is provided on the first impurity region of the semiconductor device, the contact plug does not directly contact the active region. Accordingly, failures caused by damage to the active region may be prevented.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: December 18, 2012
    Assignee: SAMSUNG Electronics Co., Ltd.
    Inventors: Joo-Young Lee, Ki-Nam Kim
  • Patent number: 8324045
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor substrate. Active elements may be formed between the insulating layers. A common node may be formed in the insulating layers to be electrically connected to the active elements. The common node and the active elements may be 2-dimensionally and repeatedly arranged on the semiconductor substrate.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: December 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-Beom Park, Soon-Moon Jung, Ki-Nam Kim
  • Patent number: 8305816
    Abstract: A method of controlling data includes, with respect to non-volatile memory cells connected to bit lines corresponding to a first bit line group, first controlling data written to the non-volatile memory cells by varying a control voltage, and, with respect to non-volatile memory cells connected to bit lines corresponding to a second bit line group, second controlling data written to the non-volatile memory cells by varying a control voltage. The controlling may include reading or verifying. Before verification, the method may include writing data to the non-volatile memory cells.
    Type: Grant
    Filed: August 19, 2008
    Date of Patent: November 6, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-tae Park, Ki-nam Kim, Yeong-taek Lee
  • Patent number: 8258563
    Abstract: A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A first cell array is formed on the semiconductor substrate, and a second cell array formed on the semiconductor layer. The semiconductor layer includes a second well region of the first conductivity type having a doping concentration greater than a doping concentration of the first well region of the first conductivity type. As the doping concentration of the second well region is increased, a resistance difference may be reduced between the first and second well regions.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: September 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Chul Jang, Ki-Nam Kim, Soon-Moon Jung, Jae-Hoon Jang
  • Publication number: 20120207456
    Abstract: The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy.
    Type: Application
    Filed: August 4, 2010
    Publication date: August 16, 2012
    Applicant: AP SYSTEMS INC.
    Inventors: Chang Kyo Kim, Tae Jong Ki, Choul Soo Kim, Ki Nam Kim
  • Publication number: 20120127201
    Abstract: An apparatus and method for providing an augmented reality user interface are provided. The method may be as follows. An augmented reality image is stored. The augmented reality is obtained by overlapping an image with augmented reality information, which is related to at least one object included in the image. The stored augmented reality image and an augmented reality image, which is captured in real time, are output through a divided display user interface at the same time.
    Type: Application
    Filed: August 1, 2011
    Publication date: May 24, 2012
    Applicant: PANTECH CO., LTD.
    Inventors: Ki-Nam KIM, Hea-Beck YANG, Seung-Jae LEE
  • Patent number: 8168530
    Abstract: A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.
    Type: Grant
    Filed: July 23, 2010
    Date of Patent: May 1, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Hun Jeong, Ki-Nam Kim, Soon-Moon Jung, Jae-Hoon Jang
  • Publication number: 20120092369
    Abstract: Provided are a display apparatus and a display method for improving visibility of each object by differently displaying each object from the background when providing an augmented reality (AR) service. The display apparatus and the display method may improve visibility of each object by outputting a list of overlapped objects or a map of overlapped objects. Also, the display apparatus and the display method may improve visibility of each object by enlarging a complex area, in which objects are densely disposed, to reduce overlapping of the objects.
    Type: Application
    Filed: January 24, 2011
    Publication date: April 19, 2012
    Applicant: PANTECH CO., LTD.
    Inventors: Ki Nam KIM, Bub Yeon KIM, Hea Beck YANG, Seung Jae LEE
  • Publication number: 20120039122
    Abstract: A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
    Type: Application
    Filed: October 24, 2011
    Publication date: February 16, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-Tae PARK, Ki-Nam KIM, Yeong-Taek LEE
  • Publication number: 20110300683
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor substrate. Active elements may be formed between the insulating layers. A common node may be formed in the insulating layers to be electrically connected to the active elements. The common node and the active elements may be 2-dimensionally and repeatedly arranged on the semiconductor substrate.
    Type: Application
    Filed: August 15, 2011
    Publication date: December 8, 2011
    Inventors: Jun-Beom Park, Soon-Moon Jung, Ki-Nam Kim
  • Patent number: 8050089
    Abstract: A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
    Type: Grant
    Filed: May 11, 2009
    Date of Patent: November 1, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Tae Park, Ki-Nam Kim, Yeong-Taek Lee
  • Publication number: 20110254451
    Abstract: Disclosed are an apparatus and method for preventing damage to the lamp of rapid heat treatment equipment. The most significant feature of the present invention is to provide an apparatus and method for preventing damage to a lamp in rapid heat treatment equipment, wherein the temperature of a quartz case comprising the lamp is sensed to identify an erratic increase in the temperature thereof so that problems with the lamp may be discovered early to take action. The apparatus and method according to the present invention allows the possibility of preventing damage or contamination of surrounding components due to lamp explosion; decisions regarding lamp replacement are also facilitated so that productivity can be enhanced. In addition, uniform lamp output may be ensured so that product quality is enhanced.
    Type: Application
    Filed: November 27, 2009
    Publication date: October 20, 2011
    Inventors: Sang Hyun Ji, Dae Gyou Jin, Ki Nam Kim
  • Patent number: 8026504
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor substrate. Active elements may be formed between the insulating layers. A common node may be formed in the insulating layers to be electrically connected to the active elements. The common node and the active elements may be 2-dimensionally and repeatedly arranged on the semiconductor substrate.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: September 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-Beom Park, Soon-Moon Jung, Ki-Nam Kim
  • Publication number: 20110215662
    Abstract: The present invention features a terminal assembly for a motor of a hybrid vehicle as a wire connection structure of a concentrated winding motor, which can maintain a gap between a plurality of terminals using a clip and a holder in an insulated manner. Such a terminal assembly for a motor of a hybrid vehicle, includes: an open type holder with an open top; a plurality of terminals concentrically arranged and inserted into the holder; and a plurality of clips, each inserted between the terminals in an insulated manner to maintain a gap between the terminals.
    Type: Application
    Filed: November 19, 2010
    Publication date: September 8, 2011
    Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, HYUNDAI MOBIS CO., LTD.
    Inventors: Hyeoun Dong Lee, Do Hyun Kim, Ki Nam Kim, Sam Gyun Kim, Tack Hwan Kwon
  • Patent number: 7988234
    Abstract: The present invention discloses a headrest for a vehicle which is constructed in such a way that a headrest body 100 of the headrest 1 can be folded by releasing the locking state with a fixed member 70 fixed on the horizontal frame portion 12 of the mounting frame 10 using a catch 60 that is rotated in an interlocking state with rotation of a lever 50.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: August 2, 2011
    Assignee: Hyundai Motor Company
    Inventors: Ki Nam Kim, Hyun Ko, Hae Il Jeong
  • Patent number: 7986560
    Abstract: Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: July 26, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Tae Park, Yong-Seok Kim, Ki-Nam Kim, Yeong-Taek Lee
  • Publication number: 20110163411
    Abstract: A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A first cell array is formed on the semiconductor substrate, and a second cell array formed on the semiconductor layer. The semiconductor layer includes a second well region of the first conductivity type having a doping concentration greater than a doping concentration of the first well region of the first conductivity type. As the doping concentration of the second well region is increased, a resistance difference may be reduced between the first and second well regions.
    Type: Application
    Filed: March 16, 2011
    Publication date: July 7, 2011
    Inventors: Young-Chul Jang, Ki-Nam Kim, Soon-Moon Jung, Jae-Hoon Jang
  • Publication number: 20110133063
    Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.
    Type: Application
    Filed: October 25, 2010
    Publication date: June 9, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ho-chul Ji, Ki-nam Kim, Yong-woo Hyung, Kyoung-won Na, Kyoung-ho Ha, Yoon-dong Park, Dae-lok Bae, Jin-kwon Bok, Pil-kyu Kang, Sung-dong Suh, Seong-gu Kim, Dong-jae Shin, In-sung Joe