Abstract: A semiconductor memory device includes a memory block comprising cell strings each of which includes a plurality of memory cells, a current measurement circuit measure a current flowing through a selected bit line coupled to a selected cell string when a data read operation or a program verification operation is performed, and a logic group configured to change a read voltage, a program verification voltage, or a pass voltage in response to the measured current.

Abstract: A method of operating a nonvolatile memory device includes performing a LSB program operation on memory cells coupled to a selected word line and a word line adjacent to the selected word line; performing a first MSB program operation so that the threshold voltages of the memory cells coupled to the selected word line reach temporary voltages lower than first target voltages; performing a second MSB program operation so that the threshold voltages of the memory cells coupled to the word line adjacent to the selected word line are higher than second target voltages; and performing a third MSB program operation so that the threshold voltages of the memory cells coupled to the selected word line are higher than the first target voltages.

Abstract: A flash memory device includes trenches that are formed at regions on a semiconductor substrate spaced apart from one another at predetermined distances, buried floating gates buried into the trenches, a plurality of isolation structures formed between the buried floating gates, and a dielectric film and a control gate formed on the buried floating gates.

Abstract: A method of operating a nonvolatile memory device includes performing a LSB program operation on memory cells coupled to a selected word line and a word line adjacent to the selected word line; performing a first MSB program operation so that the threshold voltages of the memory cells coupled to the selected word line reach temporary voltages lower than first target voltages; performing a second MSB program operation so that the threshold voltages of the memory cells coupled to the word line adjacent to the selected word line are higher than second target voltages; and performing a third MSB program operation so that the threshold voltages of the memory cells coupled to the selected word line are higher than the first target voltages.

Abstract: A method of programming a non-volatile memory device includes applying a first pass voltage to word lines in a direction of a source select line based on a first word line selected for a program operation, wherein the word lines do not include a second word line adjacent to the first word line in a direction of the source select line; and applying a first voltage, a program voltage and a second pass voltage when the first pass voltage reaches a given level. The first voltage is applied to the second word line, the program voltage is provided to the first word line, and the second pass voltage is applied to word lines in a direction of a drain select line on the basis of the first word line.

Abstract: A method of programming a nonvolatile memory device includes performing a first LSB program operation on memory cells coupled to a selected word line in order to store least significant bit (LSB) data in the memory cells, performing a first most significant bit (MSB) program operation on the memory cells coupled to the selected word line, such that threshold voltages of the memory cells rise up to a temporary target voltage less than a target voltage, performing a second most significant bit (MSB) program operation on memory cells coupled to a neighboring word line neighboring the selected word line in order to store most significant bit (MSB) data in the corresponding memory cells, and performing a third most significant bit (MSB) program operation, after performing the second most significant bit (MSB) program operation, on the memory cells on which the first most significant bit (MSB) program operation has been performed, such that the threshold voltages of the memory cells coupled to the selected word lin

Abstract: A method of programming a non-volatile memory device includes applying a first pass voltage to word lines in a direction of a source select line based on a first word line selected for a program operation, wherein the word lines do not include a second word line adjacent to the first word line in a direction of the source select line; and applying a first voltage, a program voltage and a second pass voltage when the first pass voltage reaches a given level. The first voltage is applied to the second word line, the program voltage is provided to the first word line, and the second pass voltage is applied to word lines in a direction of a drain select line on the basis of the first word line.

Abstract: A semiconductor memory device includes a memory block comprising cell strings each of which includes a plurality of memory cells, a current measurement circuit measure a current flowing through a selected bit line coupled to a selected cell string when a data read operation or a program verification operation is performed, and a logic group configured to change a read voltage, a program verification voltage, or a pass voltage in response to the measured current.

Abstract: A method of programming a non-volatile memory device with timely-adjusted voltages applied to word lines to prevent program disturb includes applying a first pass voltage to word lines in a direction of a source select line based on a first word line selected for a program operation, wherein the word lines do not include a second word line adjacent to the first word line in a direction of the source select line; and applying a first voltage, a program voltage and a second pass voltage when the first pass voltage reaches a given level. The first voltage is applied to the second word line, the program voltage is provided to the first word line, and the second pass voltage is applied to word lines in a direction of a drain select line on the basis of the first word line.

Abstract: In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines.

Abstract: The present invention relates to a flash memory device and a fabrication method thereof. A trench may be formed within a junction region between word lines by etching a semiconductor substrate between not only a word line and a select line, but also between adjacent word lines. Accordingly, the occurrence of a program disturbance phenomenon can be prevented as the injection of hot carriers into a program-inhibited cell is minimized in a program operation.

Abstract: A flash memory device and a method of operating the same is disclosed, in which the conditions of voltage (or current) applied during the reading operation are differently adjusted according to an accumulated number of times of a programming operation, an erasing operation or a reading operation (an accumulated number of operation cycle). Even if a level of the threshold voltage is changed to a level which differs from that of the target voltage by an increase of the accumulated number of operation cycle regardless of the programming operation (or the erasing operation) being normally performed, the reliability of the reading operation can be enhanced to prevent a malfunction of the memory cell from being generated.

Abstract: In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines.

Abstract: A method of programming a nonvolatile memory device includes performing a first LSB program operation on memory cells coupled to a selected word line in order to store least significant bit (LSB) data in the memory cells, performing a first most significant bit (MSB) program operation on the memory cells coupled to the selected word line, such that threshold voltages of the memory cells rise up to a temporary target voltage less than a target voltage, performing a second most significant bit (MSB) program operation on memory cells coupled to a neighboring word line neighboring the selected word line in order to store most significant bit (MSB) data in the corresponding memory cells, and performing a third most significant bit (MSB) program operation, after performing the second most significant bit (MSB) program operation, on the memory cells on which the first most significant bit (MSB) program operation has been performed, such that the threshold voltages of the memory cells coupled to the selected word lin

Abstract: The present invention relates to a flash memory device and a fabrication method thereof. A trench may be formed within a junction region between word lines by etching a semiconductor substrate between not only a word line and a select line, but also between adjacent word lines. Accordingly, the occurrence of a program disturbance phenomenon can be prevented as the injection of hot carriers into a program-inhibited cell is minimized in a program operation.

Abstract: The present invention relates to a flash memory device and a fabrication method thereof. A trench may be formed within a junction region between word lines by etching a semiconductor substrate between not only a word line and a select line, but also between adjacent word lines. Accordingly, the occurrence of a program disturbance phenomenon can be prevented as the injection of hot carriers into a program-inhibited cell is minimized in a program operation.

Abstract: A flash memory device includes control gates that are formed to completely surround the top and sides of floating gates. The control gates are located between the floating gates that are adjacent in the word line direction as well as the floating gates that are adjacent in the bit line direction. The present flash memory device reduces a shift in a threshold voltage resulting from interference among floating gates and increases an overlapping area of the floating gate and the control gates. Thus, there is an effect in that the coupling ratio can be increased.

Abstract: A method for programming a flash memory device includes selecting bit lines connected to a plurality of memory strings and selecting a word line. A lower bit is programmed into the memory cells connected to the selected word line and programming a upper bit into the memory cells. The step of selecting the word line and the step of programming the upper bit are repeated.

Abstract: A flash memory device includes control gates that are formed to completely surround the top and sides of floating gates. The control gates are located between the floating gates that are adjacent in the word line direction as well as the floating gates that are adjacent in the bit line direction. The present flash memory device reduces a shift in a threshold voltage resulting from interference among floating gates and increases an overlapping area of the floating gate and the control gates. Thus, there is an effect in that the coupling ratio can be increased.

Abstract: A flash memory device includes trenches that are formed at regions on a semiconductor substrate spaced apart from one another at predetermined distances, buried floating gates buried into the trenches, a plurality of isolation structures formed between the buried floating gates, and a dielectric film and a control gate formed on the buried floating gates