Patents by Inventor Ki Seok Jang
Ki Seok Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10131825Abstract: Provided are an optical member, a pressure-sensitive adhesive composition, and an LCD. The optical member may have excellent endurance reliability even when a pressure-sensitive adhesive layer is formed to have a thickness of 20 ?m or less.Type: GrantFiled: March 6, 2017Date of Patent: November 20, 2018Assignee: LG Chem, Ltd.Inventors: Se Woo Yang, Ki Seok Jang, Yong Su Park, Min Soo Park, Suk Ky Chang, Jong Rok Jeon
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Publication number: 20170269298Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: ApplicationFiled: May 30, 2017Publication date: September 21, 2017Applicant: Electronics and Telecommunications Research InstituteInventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, myung joon KWACK
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Publication number: 20170261705Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: ApplicationFiled: May 30, 2017Publication date: September 14, 2017Applicant: Electronics and Telecommunications Research Instit uteInventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, Myung Joon KWACK
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Patent number: 9728657Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.Type: GrantFiled: July 29, 2015Date of Patent: August 8, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jiho Joo, Gyungock Kim, Myungjoon Kwack, Sang Hoon Kim, Sun Ae Kim, In Gyoo Kim, Jaegyu Park, Jin Hyuk Oh, Ki Seok Jang
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Publication number: 20170204294Abstract: Provided are an optical member, a pressure-sensitive adhesive composition, and an LCD. The optical member may have excellent endurance reliability even when a pressure-sensitive adhesive layer is formed to have a thickness of 20 ?m or less.Type: ApplicationFiled: March 6, 2017Publication date: July 20, 2017Inventors: Se Woo YANG, Ki Seok JANG, Yong Su PARK, Min Soo PARK, Suk Ky CHANG, Jong Rok JEON
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Patent number: 9690042Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: GrantFiled: October 24, 2013Date of Patent: June 27, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Gyungock Kim, Hyundai Park, In Gyoo Kim, Sang Hoon Kim, Ki Seok Jang, Sang Gi Kim, Jiho Joo, Yongseok Choi, Hyuk Je Kwon, Jaegyu Park, Sun Ae Kim, Jin Hyuk Oh, Myung Joon Kwack
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Patent number: 9638952Abstract: The present invention relates to a pressure sensitive adhesive composition, a polarizer and a liquid crystal display device. The present invention may provide a pressure sensitive adhesive which can have excellent stress relaxation characteristic to effectively inhibit light leakage by dimension change of optical films such as polarizing plates. In addition, a pressure sensitive adhesive having excellent physical properties such as adhesion durability and workability may be provided.Type: GrantFiled: November 6, 2013Date of Patent: May 2, 2017Assignee: LG CHEM, LTD.Inventors: Ki Seok Jang, Suk Ky Chang, Min Soo Park, Se Woo Yang
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Patent number: 9505960Abstract: Provided are a pressure-sensitive adhesive (PSA) composition including an interpenetrating polymer network structure in a cured state, and including an acrylic resin and a crosslinking agent component that consists of a bifunctional crosslinking agent, a polarizer and a liquid crystal display. Provided are the PSA composition, the polarizer including a cured product of the PSA composition, and the liquid crystal display, which have excellent workability and optical properties, durability and reliability, at high temperature or humidity condition, and significantly increase productivity of optical members such as a polarizer, since the time-dependent change of the pressure-sensitive adhesive strength is rapidly ended after fabrication.Type: GrantFiled: July 16, 2009Date of Patent: November 29, 2016Assignee: LG Chem, Ltd.Inventors: Min Soo Park, In Cheon Han, Ki Seok Jang
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Patent number: 9459409Abstract: An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.Type: GrantFiled: August 6, 2015Date of Patent: October 4, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Myungjoon Kwack, Gyungock Kim, Jaegyu Park, Ki Seok Jang, Jiho Joo
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Publication number: 20160259126Abstract: An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.Type: ApplicationFiled: August 6, 2015Publication date: September 8, 2016Inventors: Myungjoon KWACK, Gyungock KIM, Jaegyu PARK, Ki Seok JANG, Jiho JOO
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Publication number: 20160211402Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.Type: ApplicationFiled: July 29, 2015Publication date: July 21, 2016Inventors: Jiho JOO, Gyungock KIM, Myungjoon KWACK, Sang Hoon KIM, Sun Ae KIM, In Gyoo KIM, Jaegyu PARK, Jin Hyuk OH, Ki Seok JANG
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Patent number: 9389455Abstract: The present invention relates to a pressure sensitive adhesive composition, a polarizer and a liquid crystal display device. The present invention may provide a pressure sensitive adhesive which can have excellent stress relaxation characteristic to effectively inhibit light leakage by dimension change of optical films such as polarizing plates. In addition, a pressure sensitive adhesive having excellent physical properties such as adhesion durability and workability may be provided.Type: GrantFiled: November 26, 2010Date of Patent: July 12, 2016Assignee: LG CHEM, LTD.Inventors: Ki Seok Jang, Suk Ky Chang, Min Soo Park, Se Woo Yang
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Patent number: 9231372Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.Type: GrantFiled: May 16, 2014Date of Patent: January 5, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: In Gyoo Kim, Sang Hoon Kim, Jaegyu Park, Gyungock Kim, Ki Seok Jang
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Patent number: 9171996Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.Type: GrantFiled: July 23, 2013Date of Patent: October 27, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Gyungock Kim, Sang Hoon Kim, Ki Seok Jang, In Gyoo Kim, Jin Hyuk Oh, Sun Ae Kim
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Patent number: 9045671Abstract: Disclosed are (A) an acrylic pressure-sensitive adhesive; and (B) an acrylic pressure-sensitive adhesive comprising an optically anisotropic compound having at least one substituent which contains an alkyl group, alkenyl group or alkynyl group at a meta-position of a mesogen. A polarizing plate and a liquid crystal display using the same are also disclosed. The optically anisotropic compound ensures excellent compatibility with the adhesive and high birefringence. Thus, main properties such as adhesion, reliability and durability in the conditions of high temperatures or high temperatures and high humidity are not worsened. Moreover light leakage is prevented by efficiently controlling the birefringence caused by shrinkage stress of the polarizing plate.Type: GrantFiled: February 2, 2009Date of Patent: June 2, 2015Assignee: LG Chem, Ltd.Inventors: In Cheon Han, Ki Seok Jang, Min Soo Park, Min Jin Ko, Bum Gyu Chol, Ik Hwan Cho, Ki Youl Lee
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Publication number: 20150146755Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.Type: ApplicationFiled: May 16, 2014Publication date: May 28, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: In Gyoo KIM, Sang Hoon KIM, Jaegyu PARK, Gyungock KIM, Ki Seok JANG
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Patent number: 9017778Abstract: The present invention relates to a pressure-sensitive adhesive composition, and a polarizer and a liquid crystal display (LCD) device using the pressure-sensitive adhesive composition, and more particularly, to a pressure-sensitive adhesive composition including (A) an acrylic copolymer and (B) a liquid optically-anisotropic compound having a mesogen core in its structure. The liquid optically-anisotropic compound having a mesogen core in its structure according to the present invention has superior solubility and compatibility with pressure-sensitive adhesive resin, and thus the pressure-sensitive adhesive composition including the liquid optically-anisotropic compound can relax stress caused by shrinkage of the polarizer and effectively compensate negative birefringence. Therefore, the polarizer and the LCD device using the pressure-sensitive adhesive composition can prevent light leakage originating from stress concentration in spite of long-term use.Type: GrantFiled: April 23, 2009Date of Patent: April 28, 2015Assignee: LG Chem, Ltd.Inventors: Ki Seok Jang, Min Soo Park, In Cheon Han, Woo Ha Kim, Min Jin Ko, Ki Youl Lee
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Publication number: 20150079387Abstract: Provided are an optical member, a pressure-sensitive adhesive composition, and an LCD. The optical member may have excellent endurance reliability even when a pressure-sensitive adhesive layer is formed to have a thickness of 20 ?m or less.Type: ApplicationFiled: November 20, 2014Publication date: March 19, 2015Inventors: Se Woo YANG, Ki Seok JANG, Yong Su PARK, Min Soo PARK, Suk Ky CHANG, Jong Rok JEON
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Patent number: 8948224Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.Type: GrantFiled: July 10, 2012Date of Patent: February 3, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: In Gyoo Kim, Gyungock Kim, Sang Hoon Kim, JiHo Joo, Ki Seok Jang
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Patent number: 8936951Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.Type: GrantFiled: February 25, 2013Date of Patent: January 20, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: In Gyoo Kim, Gyungock Kim, Sang Hoon Kim, Ki Seok Jang, JiHo Joo