Abstract: Provided a semiconductor memory device. The semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode electrically connected to the cell semiconductor pattern, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line strapping line spaced apart from the bit line in the second direction, and electrically connected to the bit line, a bit line selection line between the bit line and the bit line strapping line, and a selection semiconductor pattern between the bit line and the bit line strapping line and electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.

Abstract: The present disclosure relates to a brake disc including a braking part having a circular plate shape having a hollow portion and a plurality of coupling portions protruding and extending from an inner diameter surface thereof, and a hat part disposed in the hollow portion and having a plurality of insertion portions protruding laterally, in which the plurality of coupling portions is respectively coupled to the plurality of insertion portions, and the coupling portion of the braking part and the insertion portion of the hat part are joined to only one of an outboard portion or an inboard portion of the braking part. According to the present disclosure, it is possible to reduce noise occurring at a position at which the hat part and the braking part are coupled to each other and improve cooling performance.

Abstract: Provided is a novel compound capable of improving the luminous efficiency, stability and life span of a device, an organic electric element using the same, and an electronic device thereof.

Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes cathode active material particles. The cathode active material particles include a lithium metal oxide particle containing nickel and having a mole fraction of cobalt of 0.02 or less among all elements except lithium and oxygen.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: It is introduced that a device of manufacturing lithium sulfate comprising: a reaction body in which a reaction of lithium phosphate and sulfuric acid is performed, the reaction body being divided into an upper space and a lower space; a pressurizer for applying pressure to the inside of the reaction body; a stirrer disposed in the upper space for stirring the lithium phosphate and sulfuric acid to produce a mixture containing lithium sulfate and phosphoric acid; and a filter disposed inside the reaction body and separating the filtrate containing the phosphoric acid into the lower space by filtering the mixture.

Abstract: Disclosed is a method and apparatus for detecting anomalies in a system log on the basis of self-supervised learning, using a language model. The method comprises performing preprocessing on the system log, generating a normal token sequence having a preset length by concatenating tokenized log lines of the system log, generating an abnormal token sequence using the normal token sequence, calculating an anomaly score for a determination target token sequence using a sentence classification model, and determining the token sequence as an abnormal system log when the calculated anomaly score is greater than a threshold value.

Abstract: A powder for an electrode for manufacturing a dry electrode for a secondary battery, including an active material, a conductive material and a binder, and showing a resistivity of 700 ?·cm or less when being pressurized under a pressure of 50 MPa. The present disclosure also relates to a method for preparing the powder for an electrode, a method for manufacturing a dry electrode using the powder for an electrode, a dry electrode, a secondary battery including the dry electrode, an energy storage apparatus.

Abstract: A semiconductor memory device includes a peripheral gate structure disposed on a substrate, a bit line disposed on the peripheral gate structure and extending in a first direction, a shielding structure disposed adjacent to the bit line on the peripheral gate structure and extending in the first direction, a first word line disposed on the bit line and the shielding structure and extending in a second direction, a second word line disposed on the bit line and the shielding structure, extending in the second direction, and spaced apart from the first word line in the first direction, first and second active patterns disposed on the bit line and disposed between the first and second word lines, and contact patterns connected to the first and second active patterns.

Abstract: [summary] An epitaxial wafer is disclosed. The epitaxial wafer includes a substrate; and a stack disposed on the substrate, wherein the stack includes silicon (Si) layers and silicon germanium (SiGe) layers alternately stacked on top of each other, wherein the silicon germanium layer is doped with boron (B) or phosphorus (P).

Abstract: A flow controllable type suction and irrigation device includes: a handle having an installation space therein; a cannula provided with a conductive tube and an insulating protective tube, the conductive tube extending in a forward direction of the handle to be inserted into the abdominal cavity of a patient and being coupled to an electrode for surgery, the insulating protective tube being disposed to surround the conductive tube; and a suction supply unit provided to the handle and supplying an irrigation fluid to the cannula or suctioning blood or contaminants from the abdominal cavity of the patient through the cannula.

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

Abstract: According to some embodiments of the present inventive concept, a semiconductor memory device includes a plurality of mold insulating layers on a substrate and spaced apart from one another, a plurality of semiconductor patterns which are between respective ones of the plurality of mold insulating layers adjacent to each other, a plurality of gate electrodes, on respective ones of the plurality of semiconductor patterns, an information storage element which includes a first electrode electrically connected to each of the plurality of semiconductor patterns, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line on the substrate and contacts the semiconductor pattern, and an insulating buffer film between the first electrodes and the second electrode and on a sidewall of a respective one of the plurality of mold insulating layers.

Abstract: A semiconductor device includes a device isolation layer defining a cell active area in a substrate. A plurality of buried contacts is electrically connected with the substrate and arranged in a first direction. A bit line structure extends in a second direction between adjacent buried contacts of the plurality of buried contacts. The bit line structure includes a bit line pass portion and a bit line contact portion. The bit line structure is electrically connected with the cell active area. A first buffer pattern is disposed between the substrate and the bit line pass portion. The first buffer pattern has a T-shape in a cross-section taken along the first direction.

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Abstract: The present technology relates to a dry method of manufacturing a positive electrode for a lithium secondary battery, a positive electrode manufactured thereby, and a lithium secondary battery including the same. Thereby, a positive electrode including a positive electrode mixture layer with an appropriate density, and effective adhesion between the positive electrode mixture layer and the current collector may be realized.

Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.

Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

Abstract: An integrated circuit device includes a substrate having a first region and a second region separated from each other along a direction parallel to an upper surface of the substrate. An interface device isolation layer fills an interface trench in an interface region between the first region and the second region and defines a portion of a first active area positioned in the first region and a portion of a second active area positioned in the second region. An insulation pattern extends from the first region to an upper portion of the interface device isolation layer. The insulation pattern covers the first active area and at least a portion of the interface device isolation layer. The insulation pattern defines an undercut area on an upper surface of the interface device isolation layer. A buried pattern substantially fills the undercut region.

Abstract: An exhaust gas recirculation (EGR) cooler is provided and includes a plurality of tubes that are spaced apart from each other and a cavity that is disposed on an engine to receive the plurality of tubes. A coolant guide guides a coolant to the plurality of tubes and a cover then closes the cavity. The cavity has an inlet port that communicates with a water jacket of the engine and the cavity receives the coolant from the water jacket of the engine through the inlet port.