Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Abstract: An integrated circuit device includes a substrate having a first region and a second region separated from each other along a direction parallel to an upper surface of the substrate. An interface device isolation layer fills an interface trench in an interface region between the first region and the second region and defines a portion of a first active area positioned in the first region and a portion of a second active area positioned in the second region. An insulation pattern extends from the first region to an upper portion of the interface device isolation layer. The insulation pattern covers the first active area and at least a portion of the interface device isolation layer. The insulation pattern defines an undercut area on an upper surface of the interface device isolation layer. A buried pattern substantially fills the undercut region.

Abstract: An integrated circuit device may include a support pattern over a substrate, a lower electrode pattern and a dielectric structure over the substrate, and an upper electrode structure on the dielectric structure. The support pattern may include a first support structure extending in a vertical direction. The lower electrode pattern may be between the support pattern and the dielectric structure. The lower electrode pattern may include a first group of N (e.g., an integer of 4 or more) lower electrodes that are spaced apart from each other and may extend in the vertical direction to a first level above the substrate. The dielectric structure may include a first dielectric protrusion that extends in the vertical direction and surrounds the first support structure and the first group of N lower electrodes. The upper electrode structure may include a first upper electrode protrusion that surrounds the first dielectric protrusion.

Abstract: An integrated circuit device includes a gate stack structure on a base layer, the gate stack structure having a gate insulating layer with a first dielectric layer on the base layer and having first relative permittivity, and a gate structure on the gate insulating layer, and a gate spacer structure on opposite side walls of the gate stack structure and on the base layer, the gate spacer structure including a buried dielectric layer buried in a recess hole of the gate insulating layer at a lower portion of the gate spacer structure on the base layer, and the buried dielectric layer including a same material as the first dielectric layer.

Abstract: An integrated circuit device may include a pair of line structures. Each line structure may include a pair of conductive lines extending over a substrate in a first horizontal direction and a pair of insulating capping patterns respectively covering the pair of conductive lines. The integrated circuit device may include a conductive plug between the pair of line structures and a metal silicide film contacting a top surface of the conductive plug between the pair of insulating capping patterns. The conductive plug may have a first width between the pair of conductive lines and a second width between the pair of insulating capping patterns, in a second horizontal direction perpendicular to the first horizontal direction, where the second width is greater than the first width.

Abstract: A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.

Abstract: An integrated circuit device includes a substrate having a first region and a second region separated from each other along a direction parallel to an upper surface of the substrate. An interface device isolation layer fills an interface trench in an interface region between the first region and the second region and defines a portion of a first active area positioned in the first region and a portion of a second active area positioned in the second region. An insulation pattern extends from the first region to an upper portion of the interface device isolation layer. The insulation pattern covers the first active area and at least a portion of the interface device isolation layer. The insulation pattern defines an undercut area on an upper surface of the interface device isolation layer. A buried pattern substantially fills the undercut region.

Abstract: A semiconductor device includes a substrate including spaced-apart active regions, and device isolating regions isolating the active regions from each other, and a pillar array pattern including a plurality of pillar patterns overlapping the active regions, the plurality of pillar patterns being spaced apart from each other at an equal distance in a first direction and in a second direction intersecting the first direction, wherein the plurality of pillar patterns include first pillar patterns and second pillar patterns disposed alternatingly in the first direction and in the second direction, a shape of a horizontal cross section of the first pillar patterns being different from a shape of a horizontal cross section of the second pillar patterns.

Abstract: An integrated circuit device includes: a substrate having a cell array area, which includes a first active region, and a peripheral circuit area, which includes a second active region; a direct contact connected to the first active region in the cell array area; a bit line structure connected to the direct contact in the cell array area; and a peripheral circuit gate structure on the second active region in the peripheral circuit area, wherein the peripheral circuit gate structure includes two doped semiconductor layers each being doped with a charge carrier impurity having different doping concentrations from each other.

Abstract: The present disclosure relates to a sensor network, machine type communication (MTC), machine-to-machine (M2M) communication, and technology for internet of things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for detecting a counterfeit advertiser by a server includes detecting a random delay time or a cumulative interval for a reference device based on a time stamp for an advertisement packet received from the reference device, and detecting a random delay time or a cumulative interval for a receiving device other than the reference device based on a time stamp for an advertisement packet received from the receiving device.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Abstract: A semiconductor device includes first wiring line patterns on a support layer, second wiring line patterns on the first wiring line patterns, and a multiple insulation pattern. The first wiring line patterns extend in a first direction and are spaced apart from each other in a second direction. The support layer includes first contact hole patterns between the first wiring line patterns that are spaced apart from each other in the first and second directions. The second wiring line patterns extend in the second direction perpendicular and are spaced apart from each other in the first direction. The multiple insulation pattern is on an upper surface of the support layer where the first contact hole patterns are not formed, arranged in a third direction perpendicular to the first direction and the second direction, and between the first wiring line patterns and the second wiring line patterns.

Abstract: The present disclosure relates to a sensor network, machine type communication (MTC), machine-to-machine (M2M) communication, and technology for internet of things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for detecting a counterfeit advertiser by a server includes detecting a random delay time or a cumulative interval for a reference device based on a time stamp for an advertisement packet received from the reference device, and detecting a random delay time or a cumulative interval for a receiving device other than the reference device based on a time stamp for an advertisement packet received from the receiving device.

Abstract: A semiconductor device includes a substrate including a cell array region including a cell active region. An insulating pattern is on the substrate. The insulating pattern includes a direct contact hole which exposes the cell active region and extends into the cell active region. A direct contact conductive pattern is in the direct contact hole and is connected to the cell active region. A bit line is on the insulating pattern. The bit line is connected to the direct contact conductive pattern and extends in a direction orthogonal to an upper surface of the insulating pattern. The insulating pattern includes a first insulating pattern including a non-metal-based dielectric material and a second insulating pattern on the first insulating pattern. The second insulating pattern includes a metal-based dielectric material having a higher dielectric constant than a dielectric constant of the first insulating pattern.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Abstract: An integrated circuit device may include a support pattern over a substrate, a lower electrode pattern and a dielectric structure over the substrate, and an upper electrode structure on the dielectric structure. The support pattern may include a first support structure extending in a vertical direction. The lower electrode pattern may be between the support pattern and the dielectric structure. The lower electrode pattern may include a first group of N (e.g., an integer of 4 or more) lower electrodes that are spaced apart from each other and may extend in the vertical direction to a first level above the substrate. The dielectric structure may include a first dielectric protrusion that extends in the vertical direction and surrounds the first support structure and the first group of N lower electrodes. The upper electrode structure may include a first upper electrode protrusion that surrounds the first dielectric protrusion.

Abstract: A method for fabricating a semiconductor device includes forming a device isolation film on a substrate between first and second regions, forming first and second sealing films, such that an etch selectivity of the second sealing film is smaller than that of the first sealing film, patterning the first and second sealing films to expose the second region and a portion of the device isolation film, such that an undercut is defined under a lower surface of the second sealing film, forming a filling film filling the undercut, a thickness of the filling film being thicker on a side surface of the second sealing film than on an upper surface thereof, removing a portion of the filling film to form a filling spacer in the undercut, forming a high-k dielectric film and a metal film on the filling spacer, and patterning the high-k dielectric film and the metal film.

Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.

Abstract: Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, forming a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer.

Abstract: An integrated circuit device may include a pair of line structures. Each line structure may include a pair of conductive lines extending over a substrate in a first horizontal direction and a pair of insulating capping patterns respectively covering the pair of conductive lines. The integrated circuit device may include a conductive plug between the pair of line structures and a metal silicide film contacting a top surface of the conductive plug between the pair of insulating capping patterns. The conductive plug may have a first width between the pair of conductive lines and a second width between the pair of insulating capping patterns, in a second horizontal direction perpendicular to the first horizontal direction, where the second width is greater than the first width.