Abstract: A semiconductor device comprises a fuse having a blowing region at a center part for selectively connecting different two terminals; and a dummy contact positioned under the blowing region for forming empty space by being removed together with the blowing region in a blowing process.

Abstract: A semiconductor device includes a fuse box including a plurality of fuses and a plurality of common nodes, wherein paired fuses among the plurality of fuses are aligned in a first direction and the plurality of common nodes between fuses of each of the pairs at a different height is aligned in a second direction perpendicular to the first direction.

Abstract: A method for manufacturing a fuse box of a semiconductor device includes forming an interlayer dielectric film over a semiconductor substrate including a given lower structure; forming a metal line and a fuse over the interlayer dielectric film; forming a first protective film over the resulting structure; etching the first protective film and the fuse at a given depth by a photo-etching process with a repair mask to form an open region; and forming a second protective film vertical to the fuse.

Abstract: A method for manufacturing a fuse box of a semiconductor device includes forming an interlayer dielectric film over a semiconductor substrate including a given lower structure; forming a metal line and a fuse over the interlayer dielectric film; forming a first protective film over the resulting structure; etching the first protective film and the fuse at a given depth by a photo-etching process with a repair mask to form an open region; and forming a second protective film vertical to the fuse.

Abstract: Semiconductor device and method for fabricating the same, is disclosed, in which a gate insulating film is formed thicker at portions opposite to edge portions of a gate electrode for preventing the hot carrier possible to occur due to a strong electric field of the gate electrode, that can improve a device reliability, the device including a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, the gate insulating film having both end portions formed thicker than a center portion, a gate electrode formed on the gate insulating film, the gate electrode having a center portion formed thicker than portions thereof on both sides of the gate insulating film, and impurity regions formed in surfaces of the semiconductor substrate on both sides of the gate electrode, and the method including the steps of (1) forming a gate insulating film on a semiconductor substrate, and forming a gate electrode having a thicker center portion on the gate insulating film, (2) expanding thicknesses o