Abstract: In a method of synthesizing bilirubin according to an embodiment, a compound represented by Formula 3 is prepared by coupling a compound represented by Formula 1 with a compound represented by Formula 2, thereby firstly chemically synthesizing bilirubin and PEGylated bilirubin, which are usefully used in a medical product or the like.

Abstract: An air purifier includes: a body having an inlet introducing air; a blower accommodated in the body and providing blowing force for flow of air; a filter filtering the air introduced into the body; a wind direction control unit adjusting a filtered air discharging direction; a manipulation module for outputting a signal manipulated by user; and a control device controlling the wind direction control unit based on the signal. The wind direction control unit includes: a wind direction control member rotating about the body about an axis extending horizontally; a motor providing driving force for rotating the wind direction control member; a driving gear rotated by the driving force of the motor; and a driven gear rotated by the driving gear. The control device controls the motor so that when the driving gear is rotated and then stopped, the driving gear is stopped after reversely rotated by a predetermined angle.

Abstract: An ion detection sensor fabrication method includes: preparing an ion-sensitive film preparation solution; preparing an ion-sensitive mixed layer preparation solution by mixing the ion-sensitive film preparation solution with graphene powder; and forming an ion-sensitive mixed layer sensitive to a target ion by applying the ion-sensitive mixed layer preparation solution to fill a gap between a source and a drain spaced apart from each other and to cover at least a portion of an upper surface of each of the source and the drain.

Abstract: The present disclosure relates to an air purifier and, more particularly, to an air purifier capable of introducing a filter support structure including a first body supporting a filter member and having a protruding part on a lower surface thereof, and a second body disposed at a lower portion of the first body and having a groove part having an inclined surface in contact with the protruding part formed at one side thereof, thereby allowing the filter member drawn out of the housing to be inserted into an inner space of the housing and simultaneously moving the filter member upward to form a sealing against a latching part, thereby enhancing convenience of filter management and improving air tightness of the filter member.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A filter frame includes a support supporting a filter member, and the support includes a first support and a second support which are rotatably connected. Each of the first and second support includes a body part including a first vertical member, a horizontal member having one end perpendicularly connected to the first vertical member, and a second vertical member connected to the other end of the horizontal member, a cylindrical shaft part connected to the first vertical member, a rotating part connected to the second vertical member to surround a portion of the shaft part, a locking part provided on one of the first vertical member and the shaft part, and an engaging part provided on one of the second vertical member and the rotating part and engaged and fixed to the locking part. The rotating part of the second support is coupled to the shaft part.

Abstract: A composite filter includes a filter unit including a filter member having filtering parts, at least one filter module arranged in parallel with at least one of the filtering parts, and a bracket supporting the filtering parts disposed adjacent to each other and the filter module so that the filtering parts disposed adjacent to each other are rotatable. The bracket includes a folded portion that is selectively folded according to the relative rotation of the filtering parts, and attachment portions connected to the folded portion with the folded portion interposed therebetween, and attached to the side surfaces of the filtering parts disposed adjacent to each other. The folded portion and the attachment portions are provided integrally and are formed of a flexible material, and the attachment portion extend to the side surface of the filter module adjacent thereto to seal a gap between the filtering part and the filter module.

Abstract: A method of displaying a function of a button of an ultrasound apparatus on the button includes displaying information about one or more functions provided by the ultrasound apparatus, selecting one from among the one or more functions which have been displayed, determining a button in which the selected function is to be set based on an external input signal for matching the selected function to the button in which the selected function is to be set; and displaying information about the selected function on the determined button.

Abstract: A memory device includes: a first wafer including a first substrate, a plurality of first electrode layers and a plurality of first interlayer dielectric layers alternately stacked along first vertical channels projecting in a vertical direction on a top surface of the first substrate, and a dielectric stack comprising a plurality of dielectric layers and the plurality of first interlayer dielectric layers alternately stacked on the top surface of the first substrate; and a second wafer disposed on the first wafer, and including a second substrate, and a plurality of second electrode layers that are alternately stacked with a plurality of second interlayer dielectric layers along second vertical channels projecting in the vertical direction on a bottom surface of the second substrate and have pad parts overlapping with the dielectric stack in the vertical direction.

Abstract: An etchant composition for preparing graphene having low sheet resistance includes sulfuric acid, hydrogen peroxide, an N-heterocyclic aromatic compound, aromatic boric acid, and purified water. The etchant composition exhibits an effect of remarkably reducing the sheet resistance of graphene produced through chemical vapor deposition (CVD).

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A memory device is disclosed. The disclosed memory device may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a column control circuit. The second wafer may include a second logic structure including a row control circuit.

Abstract: An ion detection sensor fabrication method includes: preparing an ion-sensitive film preparation solution; preparing an ion-sensitive mixed layer preparation solution by mixing the ion-sensitive film preparation solution with graphene powder; and forming an ion-sensitive mixed layer sensitive to a target ion by applying the ion-sensitive mixed layer preparation solution to fill a gap between a source and a drain spaced apart from each other and to cover at least a portion of an upper surface of each of the source and the drain.

Abstract: A memory device having a vertical structure includes a memory cell array defined in a cell wafer, and having a plurality of word lines extending in a first direction and arranged in a second direction, and having a plurality of bit lines extending in the second direction and arranged in the first direction; and a logic circuit configured to control the memory cell array, and including a page buffer low-voltage circuit, a page buffer high-voltage circuit, a row decoder circuit and a peripheral circuit, wherein the page buffer low-voltage circuit is disposed in a first peripheral wafer and the page buffer high-voltage circuit, the row decoder circuit and the peripheral circuit are disposed in a second peripheral wafer, and wherein the cell wafer overlaps with the first peripheral wafer and the second peripheral wafer in a vertical direction that is perpendicular to a plane formed by the first direction and the second direction.

Abstract: A memory device includes a cell wafer including a memory cell array; a first logic wafer bonded to one surface of the cell wafer, and including a first logic circuit which controls the memory cell array; and a second logic wafer bonded to the other surface of the cell wafer which faces away from the one surface, and including a second logic circuit which controls the memory cell array.

Abstract: A memory device having a vertical structure includes a memory cell array defined in a cell wafer, and having a plurality of word lines extending in a first direction and arranged in a second direction, and having a plurality of bit lines extending in the second direction and arranged in the first direction; and a logic circuit configured to control the memory cell array, and including a page buffer low-voltage circuit, a page buffer high-voltage circuit, a row decoder circuit and a peripheral circuit, wherein the page buffer low-voltage circuit is disposed in a first peripheral wafer and the page buffer high-voltage circuit, the row decoder circuit and the peripheral circuit are disposed in a second peripheral wafer, and wherein the cell wafer overlaps with the first peripheral wafer and the second peripheral wafer in a vertical direction that is perpendicular to a plane formed by the first direction and the second direction.

Abstract: A memory device includes: a first wafer including a first substrate, a plurality of first electrode layers and a plurality of first interlayer dielectric layers alternately stacked along first vertical channels projecting in a vertical direction on a top surface of the first substrate, and a dielectric stack comprising a plurality of dielectric layers and the plurality of first interlayer dielectric layers alternately stacked on the top surface of the first substrate; and a second wafer disposed on the first wafer, and including a second substrate, and a plurality of second electrode layers that are alternately stacked with a plurality of second interlayer dielectric layers along second vertical channels projecting in the vertical direction on a bottom surface of the second substrate and have pad parts overlapping with the dielectric stack in the vertical direction.

Abstract: A memory device includes a first memory block defined in a first wafer; and a second memory block defined in a second wafer that is disposed in a vertical direction with respect to the first wafer. A size of the first memory block is smaller than a size of the second memory block.

Abstract: The present disclosure relates to a local heat treatment system and a cold forming method using the same. The local heat treatment system includes a heating device configured to locally heat only a plastic deformation occurrence portion of a blank material to a predetermined temperature, a moving device configured to move the heating device to a position of a local heating region of the blank material, and a controller configured to control the heating device and the moving device.

Abstract: A memory device includes a cell wafer including a memory cell array; a first logic wafer bonded to one surface of the cell wafer, and including a first logic circuit which controls the memory cell array; and a second logic wafer bonded to the other surface of the cell wafer which faces away from the one surface, and including a second logic circuit which controls the memory cell array.