Abstract: Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

Abstract: Provided is a method of driving a system for a robot including obtaining scan data which includes information about at least one of a coordinate and a direction of the robot, estimating a plurality of location changes of the robot by matching a plurality of consecutive scan data pairs of the obtained scan data, generating a path of the robot by connecting the estimated location changes, estimating a position of a corrected instantaneous center of rotation (ICR), and correcting the plurality of consecutive scan data pairs based on the corrected ICR.

Abstract: A lightweight, multi-layered composite substrate for a vehicle interior material and a method for manufacturing the same are disclosed. A method for manufacturing a lightweight, multi-layered composite substrate including a core layer being a foam sheet and reinforcement layers stacked on both surfaces of the core layer includes preparing the foam sheet, forming each of the reinforcement layers by forming a low-density reinforcement sheet by mixing a natural fiber with a synthetic fiber by carding, subjecting the mixed natural fiber and synthetic fiber to cross wrapping and needle punching, coating polyolefin-based powder to a weight per unit area of 10 g/m2 to 100 g/m2 on the low-density reinforcement sheet, and pressing the low-density reinforcement sheet by a heat roller set to 150 to 230° C., and obtaining a multi-layered composite substrate by stacking the reinforcement layers on both surfaces of the foam sheet by heat.

Abstract: The present invention relates to an eco-friendly lightweight substrate material for the automotive interior, characterized in that isocyanate or epoxy is added to enhance the function of a substrate material having a sandwich-type structure for the automotive interior including natural fiber that is vulnerable to high temperature and humidity conditions, preventing degradation of physical properties by water-impregnation into the natural fiber and thus enhancing the humidity-resistance and strength of a natural fiber reinforcing layer; and the substrate material is continuously prepared in a thermoplastic foam sheet core layer by thermal-laminating. The substrate material prepared according to the present invention is an eco-friendly material, also is capable of weight lightening by weight reduction, and is excellent in humidity-resistance and strength, thus providing for application to various industries such as train interior, aircraft interior, and architectural interior as well as automotive interior.

Abstract: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01?x?0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.

Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract: Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract: An integrated terminal for an advanced metering infrastructure (AMI) system based on a home network for a smart grid and a method of controlling the same are disclosed. The integrated terminal is connected between an upper system 10 of an AMI system and a plurality of home appliances 36, respectively, within a home as a power consumer by a predetermined communication unit. The integrated terminal includes a communication module between upper systems serving as an interface for communication with an upper systems 10, a communication module between home appliances 36 serving as an interface for communication with the plurality of home appliances, and a display unit which displays the information received from the upper systems by the communication module between the upper systems, and displays information received from each home appliance by the communication module between the home appliances.

Abstract: A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.

Abstract: A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto, a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls.

Abstract: Provided is a method of driving a system for a robot including obtaining scan data which includes information about at least one of a coordinate and a direction of the robot, estimating a plurality of location changes of the robot by matching a plurality of consecutive scan data pairs of the obtained scan data, generating a path of the robot by connecting the estimated location changes, estimating a position of a corrected instantaneous center of rotation (ICR), and correcting the plurality of consecutive scan data pairs based on the corrected ICR.

Abstract: There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract: A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate.

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract: A multilayer structure for a vehicle interior material, and a method for manufacturing same. A multilayer structure for a vehicle interior material comprises: a polypropylene foam sheet; a reinforcement sheet stacked on at least one surface of the polypropylene foam sheet, wherein the reinforcement sheet includes a natural fiber and a synthetic fiber and is produced by being needle-punched and then subjected to a heat roller process; and a coating layer formed on the outer surface of the reinforcement sheet.

Abstract: A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion.