Abstract: Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.

Abstract: A nonvolatile memory device using a variable resistive element is provided. The nonvolatile memory device may include a memory cell array which includes an array of multiple nonvolatile memory cells having variable resistance levels depending on data stored. Word lines may be coupled with each column of the nonvolatile memory cells. Local bit lines may be coupled with each row of the nonvolatile memory cells. Global bit lines may be selectively coupled with the multiple local bit lines.

Abstract: A vertical external cavity surface emitting laser (VECSEL) is provided, in which the incident loss of a pumping beam is reduced. The VECSEL device comprising: a transparent substrate; an optical pump radiating a pumping beam onto a first surface of the transparent substrate; a first anti-reflection coating (ARC) layer formed of a first light-transmitting insulating material on a second surface of the transparent substrate to reduce loss of the pumping beam; a distributed Bragg reflector (DBR) layer formed on the first ARC layer; a periodic gain layer formed on the DBR layer; and an external cavity mirror facing the periodic gain layer.

Abstract: A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed.

Abstract: Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface emitting laser device may include a double channel current injection structure for uniformly applying current to an active layer, wherein the double channel current injection structure may include: a first current injection channel, which may allow current to be injected toward a central portion of an aperture, which may be a light beam output region formed in the active layer, and may have a smaller diameter than the aperture: and a second current injection channel, which may allow current to be injected toward an edge of the aperture and may be located around the aperture.

Abstract: Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR) having a LHI stack structure; and a periodic gain layer that is formed on the LHI-DBR and generates laser light by being excited by the pumping beam; and an external cavity mirror that is installed outside the laser chip and faces the periodic gain layer and constitutes a laser cavity with the LHI-DBR.

Abstract: Nonvolatile memory devices include a plurality of nonvolatile memory cells and a write circuit that is operable to write data to the nonvolatile memory cells over a plurality of consecutive division write periods by generating a plurality of write pulses whose peaks do not coincide with one another to the nonvolatile memory cells.

Abstract: A base material for a vehicle headliner is disclosed, which includes a core sheet made of a crosslinked polyolefin foam sheet, and reinforcing layers disposed on upper and lower portion of the core sheet and made of natural fiber and synthetic fiber.

Abstract: Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.

Abstract: Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.

Abstract: A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto,a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls.