Abstract: Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface emitting laser device may include a double channel current injection structure for uniformly applying current to an active layer, wherein the double channel current injection structure may include: a first current injection channel, which may allow current to be injected toward a central portion of an aperture, which may be a light beam output region formed in the active layer, and may have a smaller diameter than the aperture: and a second current injection channel, which may allow current to be injected toward an edge of the aperture and may be located around the aperture.

Abstract: A semiconductor device having a GaInNAs quantum well structure including a plurality of barrier layers, in which the emission wavelength of the device can be controlled by varying the thicknesses and compositions of the barrier layers, a semiconductor laser using the semiconductor device, and methods of manufacturing the same are provided. The semiconductor laser includes a GaAs-based substrate, a quantum well structure formed on the GaAs-based substrate, a cladding layer surrounding the quantum well structure, and a pair of electrodes electrically connected to the cladding layer. The quantum well structure include a quantum well layer, a pair of first barrier layers facing each other with the active region therebetween, and a pair of second barrier layers adjacent to the respective first barrier layers.

Abstract: Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in which a substrate on which the lower Al-containing semiconductor material layer is stacked is loaded. During the thermal cleaning process, the inside of the deposition reactor is thermally treated at a predetermined temperature in an atmosphere of a gas mixture of AsH3 and H2 that is injected into the deposition reactor.

Abstract: The present invention provides a system and method for obtaining wanted information that a complicated registration procedure may be omissible and a temporary community may be created on the basis of IP addresses of the users by the unit of web page, thereby allowing users to exchange information for more effective search.

Abstract: A terminal connecting device includes a main body of a terminal block having diaphragms and supporting strips, a terminal plate positioned at the top of the supporting strips, movable terminals supported by a spring to attach or detach lead wire positioned on the terminal plate, a restraining structure, proximate to the movable terminals, which limits the movement of the lead wire, and a terminal screw coupled with the movable terminals after being penetrated through the through hole of the lead wire and fastened at a screw hole of the terminal plate. The restraining structure restricts the lead wire from diverting or dropping, thereby preventing safety accidents such as stopping the operation of facility or electric shock. The restraining structure also allows easy penetration of the terminal screw through the through hole of the lead wire in fixing the lead wire, thereby improving productivity due to ease of fastening the terminal screw.