Abstract: A variably resistive memory device may include a memory cell array and a control circuit block. The memory cell array may include a plurality of word lines, a plurality of bit lines and a plurality of memory cells. The memory cell array may also include memory layers connected between the word lines and the bit lines. The control circuit block may include a read/write circuit and a bit line control circuit. The read/write circuit may be configured to provide a selected bit line among the plurality of bit lines with a read voltage or a write voltage. The bit line control circuit may be connected with the read/write circuit and the bit lines to control a bit line voltage inputted into the selected bit line based on a location at which a selected memory cell is electrically connected to the selected bit line.

Abstract: A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Abstract: A backlight device includes: a light source to emit coherent light; an optical path difference generator on the light source, the optical path difference generator including an incident surface and a plurality of light emitting surfaces, the light emitting surfaces being parallel to the incident surface and having different separation distances from the incident surface; a light condenser on the optical path difference generator; a diffuser on the light condenser; and a collimator on the diffuser.

Abstract: A method for channel-coding information bits using a code generation matrix including 32 rows and A columns corresponding to length of the information bits includes, channel-coding the information bits having “A” length using basis sequences having 32-bit length corresponding to columns of the code generation matrix, and outputting the channel-coded result as an output sequence. If “A” is higher than 10, the code generation matrix is generated when (A-10) additional basis sequences were added as column-directional sequences to a first or second matrix. The first matrix is a TFCI code generation matrix composed of 32 rows and 10 columns used for TFCI coding. The second matrix is made when at least one of an inter-row location or an inter-column location of the first matrix was changed. The additional basis sequences satisfy a value 10 of a minimum Hamming distance.

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Abstract: A method and an apparatus for providing channel quality information in a wireless communication system are disclosed. According to one embodiment of the invention, a method for transmitting channel quality information includes receiving a downlink signal, calculating a channel quality information index for the received downlink signal at least based on a number of resource elements for a physical downlink shared channel (PDSCH), wherein the number of resource elements for the PDSCH is determined at least based on an overhead of a demodulation reference signal (DMRS), and transmitting the calculated channel quality information index.

Abstract: A method of displaying an interface for providing a social networking service (SNS) through an anonymous profile, performed by a user terminal, includes displaying a first list of at least one anonymous chatroom created by a user account for an instant messaging service (IMS) using a first region on a first page in an interface for the IMS, displaying a second list of at least one anonymous profile created to be interlinked with the user account using a first region on a second page in the interface for the IMS, and displaying, in response to an input of selecting any one anonymous profile in the second list, an interface for providing the SNS to through the selected anonymous profile.

Abstract: An apparatus for transferring a substrate includes a hand on which the substrate is placed, and the hand includes an outer support member that supports a first region of the substrate and has a pair of outer fingers, an inner support member that supports a second region of the substrate that is closer to the center of the substrate than the first region, the inner support member having a pair of inner fingers located inward of the pair of outer fingers, and a central recess formed in a region between the pair of inner fingers of the inner support member, the region corresponding to the center of the substrate placed on the hand and the central recess being open toward a front side.

Abstract: A method for channel-coding information bits using a code generation matrix including 32 rows and A columns corresponding to length of the information bits includes, channel-coding the information bits having “A” length using basis sequences having 32-bit length corresponding to columns of the code generation matrix, and outputting the channel-coded result as an output sequence. If “A” is higher than 10, the code generation matrix is generated when (A?10) additional basis sequences were added as column-directional sequences to a first or second matrix. The first matrix is a TFCI code generation matrix composed of 32 rows and 10 columns used for TFCI coding. The second matrix is made when at least one of an inter-row location or an inter-column location of the first matrix was changed. The additional basis sequences satisfy a value 10 of a minimum Hamming distance.

Abstract: An apparatus for controlling parking of a vehicle, a system having the same, and a method for the same are provided. The apparatus for controlling parking of a vehicle includes a processor to stop the vehicle when the vehicle arrives at a target parking space while performing an automatic parking of the vehicle to the target parking space, to adjust a steering angle, and to terminate the automatic parking after moving the vehicle for a predetermined distance when the steering angle is adjusted and the steering angle is greater than a preset threshold angle and a storage to store a parking path and the threshold angle.

Abstract: A substrate including a gate line and a gate electrode disposed on a substrate, an oxide semiconductor layer pattern overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer pattern, a data line intersecting the gate line, a source electrode electrically connected to the oxide semiconductor layer pattern, a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode spaced apart from the source electrode, and an insulating pattern including a first portion, which is disposed between the gate line and the data line and at least partially overlaps with both of the gate line and the data line.

Abstract: An antenna module includes: a coil part including an antenna wiring disposed on an insulating substrate; a first magnetic part disposed on a first surface of the insulating substrate; and a second magnetic part disposed on a second surface of the insulating substrate, wherein the first magnetic part and the second magnetic part overlap with each other on a center region of the antenna wiring.

Abstract: A variably resistive memory device may include a memory cell array and a control circuit block. The memory cell array may include a plurality of word lines, a plurality of bit lines and a plurality of memory cells. The memory cell array may also include memory layers connected between the word lines and the bit lines. The control circuit block may include a read/write circuit and a bit line control circuit. The read/write circuit may be configured to provide a selected bit line among the plurality of bit lines with a read voltage or a write voltage. The bit line control circuit may be connected with the read/write circuit and the bit lines to control a bit line voltage inputted into the selected bit line based on a location at which a selected memory cell is electrically connected to the selected bit line.

Abstract: An accelerated transaction processing apparatus includes a memory for storing one or more instructions, a communication interface for communicating with a blockchain network, and a processor. The processor is configured to determine whether the blockchain network is in a congested state based on monitoring information about the blockchain network, adjust a batch size based on a result of the determination, and perform batch processing for one or more individual transactions using the adjusted batch size.

Abstract: An electronic device is provided. The electronic device includes a housing and a first coil disposed in the housing and wound around a space formed inside. The housing includes a front cover and a rear cover. The rear cover includes a hole located in a first region of the rear cover that corresponds to the space of the first coil, a first slit that extends from an edge of the rear cover to the hole, and a second slit spaced apart from the first slit and extending from the edge. One end of the second slit is located in a second region of the rear cover that corresponds to the first coil. In addition, various other embodiments recognized through the present specification are possible.

Abstract: Disclosed are a method of manufacturing a uranium target, the method including (a) a step of preparing a conjugate including a matrix and a uranium target green compact formed in the matrix; and (b) a step of performing thermo-mechanical treatment through additional heat treatment at 530° C. to 600° C. during a hot rolling pass in a process of hot-rolling the conjugate, and a method of extracting radioactive Mo-99 using the uranium target.

Abstract: The invention relates to a method for hydrogenation of a phthalate compound. According to the method, stereoselectivity of hydrogenation increases and the content of cis isomers in the hydrogen product increases, and thus the quality of the product as a plasticizer may be improved.

Abstract: An accelerated transaction processing apparatus includes a memory for storing one or more instructions, a communication interface for communicating with a blockchain network and a processor. The processor is configured to obtain monitoring information on a transaction failure event occurred in the blockchain network, adjust a batch size based on the monitoring information and perform batch processing for one or more individual transactions using the adjusted batch size.

Abstract: Provided is a hydrogenation method of a phthalate compound. According to the present invention, stereoselectivity of the hydrogenation reaction may be increased, and thus the content of a cis isomer in a product may be increased. As a result, quality of the hydrogenation product as a plasticizer may be improved.

Abstract: A liquid crystal display device including a display area, a non-display area surrounding the display area and including a first non-display area disposed on a first side, in a first direction, of the display area and a second non-display area disposed on a second side, in the first direction, of the display area, a first substrate including a first base and a plurality of spacers that are disposed on a first surface of the first base, a second substrate disposed on the first substrate, and a liquid crystal layer disposed between the first and second substrates. The spacers include first spacers, having a first thickness, disposed in the non-display area and second spacers, having a second thickness greater than the first thickness, disposed in the non-display area. A number of second spacers disposed in a first non-display area is different from a number of second spacers disposed in a second non-display area.