Abstract: An electronic device may have a flexible display such as an organic light-emitting diode display. A strain sensing resistor may be formed on a bent tail portion of the flexible display to gather strain measurements. Resistance measurement circuitry in a display driver integrated circuit may make resistance measurements on the strain sensing resistor and a temperature compensation resistor to measure strain. A crack detection line may be formed from an elongated pair of traces that are coupled at their ends to form a loop. The crack detection line may run along a peripheral edge of the flexible display. Crack detection circuitry may monitor the resistance of the crack detection line to detect cracks. The crack detection circuitry may include switches that adjust the length of the crack detection line and thereby allow resistances to be measured for different segments of the line.

Abstract: An electronic device may include a display such as a light-emitting diode display. The electronic device may be a head-mounted device that provides a virtual reality or augmented reality environment to a user. To reduce artifacts in the display, a display may be operable in both a normal scanning mode and a partial scanning mode. In the normal scanning mode, every row of the display may be enabled to emit light in each frame. In the partial scanning mode, only a subset of the rows of the display may be enabled to emit light in each frame. The display may have a higher refresh rate in the partial scanning mode than in the normal scanning mode. To ensure uniform transistor stress across the display, the scanning driver for the display may scan the disabled rows in the partial scanning mode even though the rows will not be used to emit light.

Abstract: An electronic device may include a display such as a light-emitting diode display. The electronic device may be a head-mounted device that provides a virtual reality or augmented reality environment to a user. To reduce artifacts in the display, a display may be operable in both a normal scanning mode and a partial scanning mode. In the normal scanning mode, every row of the display may be enabled to emit light in each frame. In the partial scanning mode, only a subset of the rows of the display may be enabled to emit light in each frame. The display may have a higher refresh rate in the partial scanning mode than in the normal scanning mode. To ensure uniform transistor stress across the display, the scanning driver for the display may scan the disabled rows in the partial scanning mode even though the rows will not be used to emit light.

Abstract: An electronic device may include a display such as a light-emitting diode display. The electronic device may be a head-mounted device that provides a virtual reality or augmented reality environment to a user. To reduce artifacts in the display, a display may be operable in both a normal scanning mode and a partial scanning mode. In the normal scanning mode, every row of the display may be enabled to emit light in each frame. In the partial scanning mode, only a subset of the rows of the display may be enabled to emit light in each frame. The display may have a higher refresh rate in the partial scanning mode than in the normal scanning mode. To ensure uniform transistor stress across the display, the scanning driver for the display may scan the disabled rows in the partial scanning mode even though the rows will not be used to emit light.

Abstract: An electronic device may include a display such as a light-emitting diode display. The electronic device may be a head-mounted device that provides a virtual reality or augmented reality environment to a user. To reduce artifacts in the display, a display may be operable in both a normal scanning mode and a partial scanning mode. In the normal scanning mode, every row of the display may be enabled to emit light in each frame. In the partial scanning mode, only a subset of the rows of the display may be enabled to emit light in each frame. The display may have a higher refresh rate in the partial scanning mode than in the normal scanning mode. To ensure uniform transistor stress across the display, the scanning driver for the display may scan the disabled rows in the partial scanning mode even though the rows will not be used to emit light.

Abstract: An electronic device may include a display such as a light-emitting diode display. The electronic device may be a head-mounted device that provides a virtual reality or augmented reality environment to a user. To reduce artifacts in the display, a display may be operable in both a normal scanning mode and a partial scanning mode. In the normal scanning mode, every row of the display may be enabled to emit light in each frame. In the partial scanning mode, only a subset of the rows of the display may be enabled to emit light in each frame. The display may have a higher refresh rate in the partial scanning mode than in the normal scanning mode. To ensure uniform transistor stress across the display, the scanning driver for the display may scan the disabled rows in the partial scanning mode even though the rows will not be used to emit light.

Abstract: An electronic device may have a flexible display such as an organic light-emitting diode display. A strain sensing resistor may be formed on a bent tail portion of the flexible display to gather strain measurements. Resistance measurement circuitry in a display driver integrated circuit may make resistance measurements on the strain sensing resistor and a temperature compensation resistor to measure strain. A crack detection line may be formed from an elongated pair of traces that are coupled at their ends to form a loop. The crack detection line may run along a peripheral edge of the flexible display. Crack detection circuitry may monitor the resistance of the crack detection line to detect cracks. The crack detection circuitry may include switches that adjust the length of the crack detection line and thereby allow resistances to be measured for different segments of the line.

Abstract: An electronic device may include a display such as a light-emitting diode display. The electronic device may be a head-mounted device that provides a virtual reality or augmented reality environment to a user. To reduce artifacts in the display, a display may be operable in both a normal scanning mode and a partial scanning mode. In the normal scanning mode, every row of the display may be enabled to emit light in each frame. In the partial scanning mode, only a subset of the rows of the display may be enabled to emit light in each frame. The display may have a higher refresh rate in the partial scanning mode than in the normal scanning mode. To ensure uniform transistor stress across the display, the scanning driver for the display may scan the disabled rows in the partial scanning mode even though the rows will not be used to emit light.

Abstract: A thin-film transistor, method of manufacturing the same, and organic light-emitting diode (OLED) display including the same are disclosed. In one aspect, the thin-film transistor includes an active layer including a channel region, a source region, and a drain region, wherein the active layer has a top surface. The transistor also includes a gate insulating layer formed over the active layer and a gate metal layer formed over the gate insulating layer and having a bottom surface. The area of the bottom surface of the gate metal layer is less than the area of the top surface of the active layer and the bottom surface of the gate metal layer overlaps the top surface of the active layer.

Abstract: An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.

Abstract: A thin-film transistor, method of manufacturing the same, and organic light-emitting diode (OLED) display including the same are disclosed. In one aspect, the thin-film transistor includes an active layer including a channel region, a source region, and a drain region, wherein the active layer has a top surface. The transistor also includes a gate insulating layer formed over the active layer and a gate metal layer formed over the gate insulating layer and having a bottom surface. The area of the bottom surface of the gate metal layer is less than the area of the top surface of the active layer and the bottom surface of the gate metal layer overlaps the top surface of the active layer.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, an organic light emitting element positioned on the substrate, and a first thin film transistor (TFT) connected to the organic light emitting element and having a driving channel region including at least one groove.

Abstract: An organic light emitting diode (OLED) display is provided. The OLED displayer includes a capacitor electrode disposed on a substrate. An insulation layer is disposed on the capacitor electrode. A first active layer is disposed on the insulation layer. The first active layer includes a first doped area, a second doped area, and a first channel area disposed between the first doped area and the second doped area. A first gate electrode is disposed on the first channel area of the first active layer. An organic light emitting diode is disposed on the substrate. The organic light emitting diode is electrically coupled to the second doped area of the first active layer. A driving power source line is disposed on the substrate and electrically coupled to the first doped area of the first active layer and to the capacitor.

Abstract: An organic light emitting diode (OLED) display is provided. The OLED displayer includes a capacitor electrode disposed on a substrate. An insulation layer is disposed on the capacitor electrode. A first active layer is disposed on the insulation layer. The first active layer includes a first doped area, a second doped area, and a first channel area disposed between the first doped area and the second doped area. A first gate electrode is disposed on the first channel area of the first active layer. An organic light emitting diode is disposed on the substrate. The organic light emitting diode is electrically coupled to the second doped area of the first active layer. A driving power source line is disposed on the substrate and electrically coupled to the first doped area of the first active layer and to the capacitor.

Abstract: An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, an organic light emitting element positioned on the substrate, and a first thin film transistor (TFT) connected to the organic light emitting element and having a driving channel region including at least one groove.

Abstract: Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

Abstract: Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

Abstract: Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

Abstract: Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.