Patents by Inventor Ki Yeup Lee
Ki Yeup Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230363225Abstract: A display device according to an embodiment includes: a first wiring layer disposed on a substrate; a first insulating layer disposed on the first wiring layer and including an inorganic material; a second insulating layer disposed on the first insulating layer, and including an organic material; and a second wiring layer disposed on the second insulating layer and electrically connected to the first wiring layer through a contact hole of the first insulating layer and the second insulating layer. A thickness of the second insulating layer is greater than a thickness of the first insulating layer. The contact hole includes a first sub-contact hole formed in the first insulating layer and a second sub-contact hole formed in the second insulating layer. At least part of at least one edge of the first sub-contact hole is covered with the second insulating layer.Type: ApplicationFiled: March 17, 2023Publication date: November 9, 2023Applicant: Samsung Display Co., LTD.Inventors: Do Gi LIM, SEOK-MIN KANG, Ki Yeup LEE, An Su LEE
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Publication number: 20220254813Abstract: A display device includes a first substrate, a first electrode on the first substrate, a second electrode on the first substrate and spaced from the first electrode, a plurality of light-emitting elements each having respective end portions on the first and second electrodes, a first transistor having a first end connected to the first electrode and a second end grounded, and a second transistor having a first end connected to the second electrode and a second end grounded, wherein the first transistor is forward-biased to the first electrode, and the second transistor is reverse-biased to the second electrode.Type: ApplicationFiled: November 8, 2021Publication date: August 11, 2022Inventors: Ki Yeup LEE, Dong Hyeon KI, Dong Hee SHIN, Dong Yoon LEE
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Publication number: 20220231079Abstract: A display device includes a first substrate including a display area comprising pixels, and a non-display area surrounding the display area, a thin film transistor layer disposed on the first substrate and comprising a thin film transistor, a second substrate disposed on the thin film transistor layer and facing the first substrate, a sealing part disposed between the first substrate and the second substrate in the non-display area, and bonding the first and second substrates, a metal line disposed in the non-display area on the thin film transistor layer and overlapping the sealing part, and an antistatic member comprising a support supported by the metal line, a first receiver protruding from a top portion of the support to an exterior of the sealing part, and a second receiver protruding from a bottom portion of the support toward the exterior of the sealing part and facing the first receiver.Type: ApplicationFiled: September 23, 2021Publication date: July 21, 2022Applicant: Samsung Display Co., LTD.Inventors: Ki Yeup LEE, Sang Yong NO, Ji Yeon CHOI, Tae Ho KANG, Hwa Rang LEE
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Patent number: 9991292Abstract: A driver includes a dummy stage and one or more additional stages coupled to the dummy stage. The dummy stage includes a first transistor coupled between an input terminal and an output terminal. The first transistor includes two electrodes forming at least a first capacitor to store at least a portion of static electricity received through the input terminal. The one or more additional stages output gate signals, which may be received, for example, by a display device.Type: GrantFiled: March 27, 2014Date of Patent: June 5, 2018Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jaewon Kim, Boyeong Kim, Soo-Hyun Kim, Kyung-ho Park, HyungJun Park, Dong-Hyun Yoo, Ki Yeup Lee, Seongyoung Lee
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Patent number: 9443881Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.Type: GrantFiled: October 20, 2014Date of Patent: September 13, 2016Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jean-Ho Song, Shin-Il Choi, Sun-Young Hong, Shi-Yul Kim, Ki-Yeup Lee, Jae-Hyoung Youn, Sung-Ryul Kim, O-Sung Seo, Yang-Ho Bae, Jong-Hyun Choung, Dong-Ju Yang, Bong-Kyun Kim, Hwa-Yeul Oh, Pil-Soon Hong, Byeong-Beom Kim, Je-Hyeong Park, Yu-Gwang Jeong, Jong-In Kim, Nam-Seok Suh
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Patent number: 9406630Abstract: A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.Type: GrantFiled: December 22, 2014Date of Patent: August 2, 2016Assignee: Samsung Display Co., Ltd.Inventors: Joo-Han Kim, Ki-Yong Song, Dong-Ju Yang, Hee-Joon Kim, Yeo-Geon Yoon, Sung-Hen Cho, Chang-Hoon Kim, Jae-Hong Kim, Yu-Gwang Jeong, Ki-Yeup Lee, Sang-Gab Kim, Yun-Jong Yeo, Shin-Il Choi, Ji-Young Park
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Patent number: 9171999Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.Type: GrantFiled: May 31, 2013Date of Patent: October 27, 2015Assignee: Samsung Display Co., Ltd.Inventors: Chang-Oh Jeong, Woo-Sung Sohn, Dong-Gyu Kim, Shi-Yul Kim, Ki-Yeup Lee, Jean-Ho Song
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Publication number: 20150108489Abstract: A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.Type: ApplicationFiled: December 22, 2014Publication date: April 23, 2015Inventors: Joo-Han KIM, Ki-Yong SONG, Dong-Ju YANG, Hee-Joon KIM, Yeo-Geon YOON, Sung-Hen CHO, Chang-Hoon KIM, Jae-Hong KIM, Yu-Gwang JEONG, Ki-Yeup LEE, Sang-Gab KIM, Yun-Jong YEO, Shin-Il CHOI, Ji-Young PARK
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Publication number: 20150053984Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.Type: ApplicationFiled: October 20, 2014Publication date: February 26, 2015Inventors: JEAN-HO SONG, Shin-Il Choi, Sun-Young Hong, Shi-Yul Kim, Ki-Yeup Lee, Jae-Hyoung Youn, Sung-Ryul Kim, O-Sung Seo, Yang-Ho Bae, Jong-Hyun Choung, Dong-Ju Yang, Bong-Kyun Kim, Hwa-Yeul Oh, Pil-Soon Hong, Byeong-Beom Kim, Je-Hyeong Park, Yu-Gwang Jeong, Jong-In Kim, Nam-Seok Suh
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Patent number: 8946004Abstract: A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.Type: GrantFiled: August 19, 2009Date of Patent: February 3, 2015Assignee: Samsung Display Co., Ltd.Inventors: Joo-Han Kim, Ki-Yong Song, Dong-Ju Yang, Hee-Joon Kim, Yeo-Geon Yoon, Sung-Hen Cho, Chang-Hoon Kim, Jae-Hong Kim, Yu-Gwang Jeong, Ki-Yeup Lee, Sang-Gab Kim, Yun-Jong Yeo, Shin-Il Choi, Ji-Young Park
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Publication number: 20140346520Abstract: A driver includes a dummy stage and one or more additional stages coupled to the dummy stage. The dummy stage includes a first transistor coupled between an input terminal and an output terminal. The first transistor includes two electrodes forming at least a first capacitor to store at least a portion of static electricity received through the input terminal. The one or more additional stages output gate signals, which may be received, for example, by a display device.Type: ApplicationFiled: March 27, 2014Publication date: November 27, 2014Applicant: Samsung Display Co., Ltd.Inventors: Jaewon KIM, Boyeong KIM, Soo-Hyun KIM, Kyung-ho PARK, HyungJun PARK, Dong-Hyun YOO, Ki Yeup LEE, Seongyoung LEE
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Patent number: 8865528Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.Type: GrantFiled: July 27, 2010Date of Patent: October 21, 2014Assignee: Samsung Display Co., Ltd.Inventors: Jean-Ho Song, Shin-Il Choi, Sun-Young Hong, Shi-Yul Kim, Ki-Yeup Lee, Jae-Hyoung Youn, Sung-Ryul Kim, O-Sung Seo, Yang-Ho Bae, Jong-Hyun Choung, Dong-Ju Yang, Bong-Kyun Kim, Hwa-Yeul Oh, Pil-Soon Hong, Byeong-Beom Kim, Je-Hyeong Park, Yu-Gwang Jeong, Jong-In Kim, Nam-Seok Suh
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Patent number: 8586990Abstract: A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented.Type: GrantFiled: August 15, 2011Date of Patent: November 19, 2013Assignee: Samsung Display Co., Ltd.Inventors: Dong-Ju Yang, Yu Gwang Jeong, Ki-Yeup Lee, Sang-Gab Kim, Yun-Jong Yeo, Shin-Il Choi, Hong-Kee Chin, Seung-Ha Choi, Jung-Suk Bang
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Publication number: 20130270565Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.Type: ApplicationFiled: May 31, 2013Publication date: October 17, 2013Inventors: Chang-Oh JEONG, Woo-Sung SOHN, Dong-Gyu KIM, Shi-Yul KIM, Ki-Yeup LEE, Jean-Ho SONG
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Patent number: 8518498Abstract: The present invention relates to a liquid crystal display, wherein arrangement of liquid crystal molecules thereof is controlled by using a monomer that is polymerized by ultraviolet rays to provide a pre-tilt. To prevent damage to organic material layers when irradiating ultraviolet rays to the monomer, a blocking film made of an ultraviolet absorbing agent is formed on or over at least one such layer.Type: GrantFiled: September 1, 2010Date of Patent: August 27, 2013Assignee: Samsung Display Co., Ltd.Inventors: Ki-Yong Song, Ki-Yeup Lee, Jae-Hong Kim, Yoon-Ho Kang, Yong-Hwan Kim
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Patent number: 8476123Abstract: A method for manufacturing a thin film transistor array panel includes forming a gate line; forming an insulating layer on the gate line; forming first and second silicon layers first and second metal layers; forming a photoresist pattern having first and second portions; forming first and second metal patterns by etching the first and second metal layers; processing the first metal pattern with SF6 or SF6/He; forming silicon and semiconductor patterns by etching the second and first silicon layers; removing the first portion of the photoresist pattern; forming an upper layer of a data wire by wet etching the second metal pattern; forming a lower layer of the data wire and an ohmic contact by etching the first metal and amorphous silicon patterns; forming a passivation layer including a contact hole on the upper layer; and forming a pixel electrode on the passivation layer.Type: GrantFiled: May 17, 2011Date of Patent: July 2, 2013Assignee: Samsung Display Co., Ltd.Inventors: Dong-Ju Yang, Yu-Gwang Jeong, Jean-Ho Song, Ki-Yeup Lee, Shin-Il Choi, Tae-Woo Kim
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Patent number: 8455871Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.Type: GrantFiled: August 20, 2010Date of Patent: June 4, 2013Assignee: Samsung Display Co., Ltd.Inventors: Chang-Oh Jeong, Woo-Sung Sohn, Dong-Gyu Kim, Shi-Yul Kim, Ki-Yeup Lee, Jean-Ho Song
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Patent number: 8450737Abstract: A thin film transistor array panel includes: a substrate; a signal line disposed on the substrate and including copper (Cu); a passivation layer disposed on the signal line and having a contact hole exposing a portion of the signal line; and a conductive layer disposed on the passivation layer and connected to the portion of the signal line through the contact hole, wherein the passivation layer includes an organic passivation layer including an organic insulator that does not include sulfur, and a method of manufacturing the thin film transistor prevents formation of foreign particles on the signal line.Type: GrantFiled: May 20, 2010Date of Patent: May 28, 2013Assignee: Samsung Display Co., Ltd.Inventors: Shin-Il Choi, Yu-Gwang Jeong, Ki-Yeup Lee, Dong-Ju Yang, Jean-Ho Song
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Patent number: 8211797Abstract: A metal wiring layer and a method of fabricating the metal wiring layer are provided. The method includes forming a dielectric layer on a substrate, forming a plurality of dielectric layer patterns and holes therein on the substrate by etching part of the dielectric layer, with a cross sectional area of the holes in the dielectric layer patterns decreasing with increasing distance away from the substrate and the holes exposing the substrate, forming a trench by etching a portion of the substrate exposed through the holes in the dielectric layer patterns, and forming a metal layer which fills the trench and the holes in the dielectric layer patterns. Thus, it is possible to prevent the occurrence of an edge build-up phenomenon by forming a metal layer in a plurality of holes in the dielectric layer patterns having a cross sectional area decreasing with increasing distance away from the substrate.Type: GrantFiled: October 31, 2008Date of Patent: July 3, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Ju Yang, Shin-Il Choi, Sang-Gab Kim, Min-Seok Oh, Hong-Kee Chin, Ki-Yeup Lee, Yu-Gwang Jeong, Seung-Ha Choi
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Publication number: 20120064678Abstract: A method for manufacturing a TFT array panel includes forming a photosensitive film pattern with first and second parts in first and second sections on a metal layer, etching the metal layer of a third section using the film pattern as a mask to form first and second metal patterns, etching the film pattern to remove the first part, etching first and second amorphous silicon layers of the third section using the second part as a mask to form an amorphous silicon pattern and a semiconductor, etching the first and second metal patterns of the first section using the second part as a mask to form a source electrode and a drain electrode including an upper layer and a lower layer, and etching the amorphous silicon pattern of the region corresponding to the first section by using the second part as a mask to form an ohmic contact.Type: ApplicationFiled: March 22, 2011Publication date: March 15, 2012Inventors: Byeong-Jin LEE, Yu-Gwang Jeong, Dong-Ju Yang, Bong-Kyun Kim, Hong-Sick Park, Byeong-Beom Kim, Sang-Gab Kim, Ji-Young Park, Jean-Ho Song, Ki-Yeup Lee, Shin-Il Choi