Patents by Inventor Ki Yong

Ki Yong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8883296
    Abstract: A coating structure and a method for forming the same where, by forming an aluminum oxide layer and a silicon dioxide layer between a product to be coated and a coating layer, durability, reliability and anti-corrosion of the coating layer can be improved and furthermore, product yield can also be improved. The coating structure formed on the surface of a product includes an aluminum oxide (Al2O3) layer formed on the surface of the product, a silicon dioxide (SiO2) layer formed on the surface of the aluminum oxide (Al2O3) layer, and a coating composition layer formed on the silicon dioxide (SiO2) layer.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: November 11, 2014
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byung Ha Park, Sang Ho Cho, Myung Gon Kim, Ki Yong Song, Cheol Ham, In Oh Hwang
  • Publication number: 20140328822
    Abstract: A method for preparing a highly concentrated fibrinogen solution includes adding amino acid or amino acid derivatives, and/or salts to a lowly concentrated fibrinogen solution, followed by a ultra-filtration concentration. Factor XIII can be added either before or after the ultra-filtration to give a fibrin sealant component 1 containing the highly concentrated fibrinogen solution. The fibrin sealant component 1 could be preserved for a long time at room temperature and be used without a reconstitution. Fibrin sealant component 2 is a solution containing thrombin and calcium. A fibrin sealant product may be provided in a vial type in which the fibrin sealant components 1 and 2 are each filled in separate vials or in a re-filled syringe type wherein the fibrin sealant components 1 and 2 are each filled in separate syringes connected with each other to be instantly used.
    Type: Application
    Filed: October 24, 2012
    Publication date: November 6, 2014
    Applicant: GREEN CROSS CORPORATION
    Inventors: Jun Sic Kim, Gun Sul Lee, Ki-Yong Kim, Yong Kang, Ki Hwan Son
  • Publication number: 20140330843
    Abstract: An apparatus and a method for mining temporal pattern are provided. A method for mining temporal pattern includes generating a data pattern group comprising data patterns from sequential data, generating a candidate pattern group comprising candidate patterns from the data pattern group, calculating a support value for a candidate pattern in a candidate pattern group based on a discrepancy value of the candidate pattern, and determining whether the candidate pattern satisfies a predetermined pattern requirement, based on the calculated support value.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 6, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyoung-Min PARK, Hyo-A KANG, Ki-Yong LEE
  • Publication number: 20140306798
    Abstract: Provided is an RFID system and method for maintaining a constant strength of a signal transmitted from an RFID tag to an RFID reader, regardless of a distance between the reader and tag. The RFID signal strength measuring reader measures a signal strength received from the RFID tag, creates control information used to set an amplification amount of the RFID tag by using a value of the measured strength to include the control information in an output signal, and sends the output signal to the RFID tag. The RFID tag, if the signal sent from the RFID reader is received, extracts internal information from the received signal, sends the information to the RFID reader as an output signal, and extracts the control information included in the signal sent from the RFID reader to adjust a strength of the output signal according to a value of the control information.
    Type: Application
    Filed: June 24, 2014
    Publication date: October 16, 2014
    Applicant: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Ki-Yong JEON, Chang-seok YOON, Sung-HO CHO
  • Publication number: 20140308445
    Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.
    Type: Application
    Filed: June 27, 2014
    Publication date: October 16, 2014
    Inventors: Heung-Yeol Na, Ki-Yong Lee, Jin-Wook Seo, Min-Jae Jeong, Jong-Won Hong, Eu-Gene Kang, Seok-Rak Chang, Tae-Hoon Yang, Yun-Mo Chung, Byung-Soo So, Byoung-Keon Park, Ivan Maidanchuk, Dong-Hyun Lee, Kii-Won Lee, Won-Bong Baek, Jong-Ryuk Park, Bo-Kyung Choi, Jae-Wan Jung
  • Publication number: 20140299860
    Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode.
    Type: Application
    Filed: June 18, 2014
    Publication date: October 9, 2014
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Dong-Hyun Lee, Jin-Wook Seo, Ki-Yong Lee
  • Publication number: 20140284366
    Abstract: A method of cutting a tempered glass substrate, which is capable of cut a tempered glass substrate without mechanical breaking process and cooling process , is disclosed. The method of cutting a tempered glass substrate, includes, forming an initial crack at a cut-starting point of the tempered glass substrate; forming a heated line at the tempered glass substrate by irradiating laser beam from a point different from the cut-starting point with the initial crack to the cut-starting point with the initial crack through optical heater; and automatically propagating the intimal crack along the heated line to cut the tempered glass substrate.
    Type: Application
    Filed: April 3, 2012
    Publication date: September 25, 2014
    Applicant: RORZE SYSTEMS CORPORATION
    Inventors: Yong-Heum Cho, Hyuk Park, Seong-Wook Moon, Ki-Yong You
  • Publication number: 20140284558
    Abstract: A thin film transistor (TFT) includes a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; and a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance.
    Type: Application
    Filed: July 1, 2013
    Publication date: September 25, 2014
    Applicant: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Bo-Kyung Choi, Jae-Wan Jung, Ki-Yong Lee
  • Patent number: 8841206
    Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: September 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Yun-Mo Chung, Tak-Young Lee, Jin-Wook Seo, Ki-Yong Lee, Min-Jae Jeong, Yong-Duck Son, Byung-Soo So, Seung-Kyu Park, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung
  • Publication number: 20140268484
    Abstract: A dielectric ceramic composition includes: a base material powder BamTiO3 (0.995?m?1.010); 0.2 to 2.0 moles of a first accessory ingredient, an oxide or carbide containing at least one of Ba and Ca, based on 100 moles of the base material powder; a second accessory ingredient, an oxide containing Si or a glass compound containing Si; 0.2 to 1.5 moles of a third accessory ingredient, an oxide containing at least one of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, based on 100 moles of the base material powder; and 0.05 to 0.80 mole of a fourth accessory ingredient, an oxide containing at least one of Cr, Mo, W, Mn, Fe, Co, and Ni, based on 100 moles of the base material powder, a content ratio of the first accessory ingredient to the second accessory ingredient being 0.5 to 1.7.
    Type: Application
    Filed: June 21, 2013
    Publication date: September 18, 2014
    Inventors: Sung Hyung KANG, Du Won CHOI, Ki Yong LEE, Jae Hun CHOE, Min Sung SONG
  • Patent number: 8815663
    Abstract: A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: August 26, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Tak-Young Lee, Jin-Wook Seo, Ki-Yong Lee
  • Publication number: 20140236498
    Abstract: Provided are an apparatus and method of monitoring a wind turbine blade. The method includes converting strain of a blade into moment, generating a reference value based on design information of the blade and statistical information of the moment, and comparing the moment with the reference value and determining a state of the blade. Accordingly, since the reference value serving as a reference of blade state determination is generated according to blade design information and moment statistical information and learning of the moment statistical information is performed, reliability of blade state determination can be improved, and thus, effective management and maintenance of the blade becomes possible.
    Type: Application
    Filed: September 20, 2012
    Publication date: August 21, 2014
    Applicant: KOREA ELECTRIC POWER CORPORATION
    Inventors: Ki Yong Oh, Jae Kyung Lee, Joon Young Park, Jun Shin Lee
  • Patent number: 8803148
    Abstract: A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: August 12, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Tak-Young Lee, Jin-Wook Seo, Ki-Yong Lee, Heung-Yeol Na
  • Patent number: 8803607
    Abstract: There is provided a power amplifier capable of increasing linear output power and efficiency without sacrificing an overall gain by employing a vector modulation function in a driving stage, with no separate vector modulator. The power amplifier includes a driving stage performing vector-modulation on an input RF signal to provide an I channel signal and a Q channel signal having different phases and amplifying the I channel signal and the Q channel signal to set gains; and a power stage amplifying power levels of the signals amplified by the driving stage.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: August 12, 2014
    Assignees: Samsung Electro-Mechanics Co., Ltd., Korea Advanced Institute of Science & Technology
    Inventors: Ki Yong Son, Gyu Suck Kim, Yoo Sam Na, Song Cheol Hong, Bon Hoon Koo
  • Patent number: 8802464
    Abstract: A method for fabricating a process substrate includes: providing a first substrate; providing a substrate and an auxiliary substrate; contacting the substrate and the auxiliary substrate with each other in a vacuum state, thereby forming micro spaces of a vacuum state between the substrate and the auxiliary substrate; and increasing a pressure at the outside of the contacted substrate and auxiliary substrate to attach the substrate and the auxiliary substrate to each other by a pressure difference between the micro spaces and the outside of the contacted substrate and auxiliary substrate.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: August 12, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Jae-Won Lee, Ki-Yong Kim, Jae Young Oh, Yong-Su An, Sung-Ki Kim, Gi-Sang Hong, Jin-Bok Lee, Sang-Hyuk Won, Dong-Kyu Lee
  • Publication number: 20140218840
    Abstract: There are provided a dielectric composition and a multilayer ceramic electronic component using the same, the dielectric composition including dielectric grains having a perovskite structure represented by ABO3, wherein the dielectric grain includes a base material, in which at least one rare earth element RE is solid-solubilized in at least one of A and B, and a transition element TR, and a ratio (TR/RE) of the transition element to the rare earth element is 0.2 to 0.8.
    Type: Application
    Filed: April 26, 2013
    Publication date: August 7, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sung Hyung KANG, Ki Yong LEE, Han Nah CHANG, Du Won CHOI, Jae Hun CHOE, Min Sung SONG
  • Patent number: 8795216
    Abstract: Provided is a waist support with a disc protection belt having functions of strongly pulling and fixing the backbone as well as extending the backbone.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: August 5, 2014
    Inventor: Ki Yong Chang
  • Patent number: 8797145
    Abstract: Provided is an RFID system and method for maintaining a constant strength of a signal transmitted from an RFID tag to an RFID reader, regardless of a distance between the reader and tag. The RFID signal strength measuring reader measures a signal strength received from the RFID tag, creates control information used to set an amplification amount of the RFID tag by using a value of the measured strength to include the control information in an output signal, and sends the output signal to the RFID tag. The RFID tag, if the signal sent from the RFID reader is received, extracts internal information from the received signal, sends the information to the RFID reader as an output signal, and extracts the control information included in the signal sent from the RFID reader to adjust a strength of the output signal according to a value of the control information.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: August 5, 2014
    Assignee: Intellectual Discovery Co., Ltd.
    Inventors: Ki-yong Jeon, Chang-seok Yoon, Sung-ho Cho
  • Patent number: 8791032
    Abstract: A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT, the silicon layer can be crystallized without being exposed to air, so that contamination can be prevented. Also, due to the overlying insulating layer, the silicon layer can be patterned without directly contacting photoresist. The result is a TFT with uniform and improved electrical characteristics, and an improved display apparatus.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: July 29, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Dong-Hyun Lee, Jin-Wook Seo, Ki-Yong Lee
  • Patent number: 8790967
    Abstract: A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the polycrystalline silicon layer corresponding to a region excluding a channel region in the polycrystalline silicon layer; and annealing the substrate to getter the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer to the region in the polycrystalline silicon layer having the metal layer pattern or metal silicide layer pattern. Accordingly, the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer can be effectively removed, and thus a thin film transistor having an improved leakage current characteristic and an OLED display device including the same can be fabricated.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: July 29, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jin-Wook Seo, Tae-Hoon Yang, Kil-Won Lee, Ki-Yong Lee